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公开(公告)号:US10361313B2
公开(公告)日:2019-07-23
申请号:US15465740
申请日:2017-03-22
Inventor: Doo Hyeb Youn , Sun Jin Yun , Changbong Yeon , Young-Jun Yu
IPC: H01L21/04 , H01L29/16 , H01L29/24 , H01L29/45 , H01L29/66 , H01L21/445 , H01L29/772 , H01L29/786 , H01L21/4763
Abstract: Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.
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公开(公告)号:US10240256B2
公开(公告)日:2019-03-26
申请号:US15592275
申请日:2017-05-11
Inventor: Doo Hyeb Youn , Sun Jin Yun , Changbong Yeon , Young-Jun Yu
IPC: D01D5/00
Abstract: An electro spinning apparatus according to embodiments of the inventive concept includes a nozzle unit discharging nano fiber on a substrate, and an alignment device having the substrate disposed thereon and aligning the nano fiber, wherein the alignment device includes a body and an angle adjustment unit adjusting an angle formed by a straight line connecting two electrodes disposed to face each other among the electrodes and the substrate.
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13.
公开(公告)号:US20180350852A1
公开(公告)日:2018-12-06
申请号:US15993765
申请日:2018-05-31
Inventor: JungWook Lim , Sun Jin Yun , Tae Yoon Kim , Jeho Na , Seong Hyun Lee , Kwang Hoon Jung
IPC: H01L27/144 , H01L31/113 , H01L31/18 , H01L31/0336 , G11C13/04
CPC classification number: H01L27/1443 , G11C13/047 , G11C16/0466 , G11C16/18 , H01L27/1446 , H01L31/0296 , H01L31/0336 , H01L31/1136 , H01L31/18
Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
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