摘要:
A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer.
摘要:
A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer.
摘要:
A system for generating a multiple phase clock. The system includes a ring oscillator structure for generating multiple phases. The structure includes two or more unit oscillators, each unit oscillator implemented by a ring oscillator having M stages. The structure also includes a horizontal loop coupling the two or more unit oscillators to generate multiple phases. The number of phases generated is equal to the product of the number of unit oscillators and M.
摘要:
Clock generation circuit and method of generating clock signals. The clock generation circuit includes an inverter directly receiving an external clock signal and outputting an inverted external clock signal, M (where M is an integer ≧1) loop circuits arranged in series, the first loop circuit receiving the inverted external clock signal, each of the N loop circuits having n (where n is an integer ≧2) nodes, each of the M−1 loop circuits generating n intermediate internal clock signals, each at a corresponding one of the n nodes, wherein a frequency of the n intermediate internal clock signals is a multiple of a frequency of the external clock signal and the inverted external clock signal; and n sets of inverters, each including M−1 inverters connected in series, each of the M−1 inverters receiving a corresponding intermediate internal clock signal from a previous loop circuit and outputting a corresponding intermediate internal clock signal to a next loop circuit.
摘要:
A double data rate (“DDR”) synchronous dynamic random access memory (“SDRAM”) semiconductor device is provided that prevents a conflict between data read from and data written to the DDR SDRAM semiconductor device when data is written to the DDR SDRAM semiconductor device, which includes a delay locked loop (“DLL”) circuit, a clock signal control unit, an output unit, and an output control unit, where the DLL circuit compensates for skew of an input clock signal and generates an output clock signal; the clock signal control unit receives a read signal activated when data stored in the DDR SDRAM semiconductor device is read out, a DLL locking signal activated when the DLL circuit performs a locking operation on the input clock signal, and the output clock signal, and outputs the output clock signal when either the read signal or the DLL locking signal is active; the output unit buffers data stored in the DDR SDRAM semiconductor device and outputs the data to outside of the DDR SDRAM semiconductor device in synchronization with the output clock signal output from the clock signal control unit; and the output control unit receives the output clock signal output from the clock signal control unit, and the read signal, and outputs the read signal to the output unit in synchronization with the output clock signal output from the clock signal control unit.
摘要:
An output driver effectively controls the slew rate of an output signal according to CAS latency information including frequency information of an operating clock signal or according to frequency information obtained by detecting the frequency of the operating clock signal. The output driver includes an output terminal, a pull-up driver which pulls-up the output terminal, and a pull-down driver which pulls-down the output terminal. Also, the output driver further includes a mode register set (MRS) which stores CAS latency information of the semiconductor memory device. Driving capabilities of the pull-up driver and the pull-down driver are varied in response to the CAS latency information. The output driver may include a frequency detector which detects and stores the operating frequency of the semiconductor memory device. In this case, the driving capabilities of the pull-up driver and the pull-down driver are varied in response to output signals output from the frequency detector.
摘要:
An output driver and method thereof. In the method, a current may be adjusted to adjust a power consumption in response to a change in a data rate. A first example output driver may include at least one transistor receiving at least one input signal, at least one resistor connected between the at least one transistor and a first voltage and a tail current source connected between the at least one transistor and a second voltage, the tail current source controlling a given current level of at least one signal based at least in part on the given data rate. A second example output driver may include a first differential amplification unit, including a first tail current source, receiving first and second input signals and a second differential amplification unit, including a second tail current source, receiving third and fourth input signals, at least one of the first and second tail current sources controlling a given current level of at least one signal based at least in part on the given data rate.
摘要:
A semiconductor memory device having a partially controlled delay locked loop includes a delay locked loop and a control signal generator. The control signal generator generates a first control signal and a second control signal, which are responsive to first through fifth mode selection signals for selecting operation modes of the semiconductor memory, device to partially turn the delay locked loop on or off. If the first control signal or the second control signal is activated, a portion of the delay locked loop to which the first or second control signal is applied is turned off. If the first control signal or the second control signal is deactivated, a portion of the delay locked loop to which the first or second control signal is applied is turned on. If the first mode selection signal is activated, only the second control signal is activated. If the second mode selection signal is activated, the first and second control signals are deactivated. If at least one of the third through fifth mode selection signals is activated, the first and second control signals are activated. Since the semiconductor memory device includes a built-in delay locked loop which is partially turned on or off, current consumption of the semiconductor memory device can be reduced.
摘要:
Provided is an input buffer whose input capacitance presented to input signals can be reduced. The input buffer includes a first differential amplifier which compares the sizes of a first input signal and a second input signal and outputs an output signal as the result of the comparison; a second differential amplifier which compares the sizes of the first input signal and a reference voltage and outputs a second output signal as the result of the comparison; and a third differential amplifier which compares the sizes of the second input signal and the reference voltage and outputs a third output signal as the result of the comparison, wherein the first differential amplifier shares transistors, to which the first and second input signals are input, with the second and third differential amplifiers. The first differential amplifier operates only in a differential operation mode, and the second and third differential amplifiers operate only in a single operation mode. The phase of the first input signal is opposite to the phase of the second input signal, and the first and second input signals are different signals in the single operation mode. Accordingly, an input buffer is advantageous in that both a differential signal pair and single-ended signals can be received and output and the input capacitance of the input buffer seen by the input signals can be reduced.
摘要:
Provided are an interface circuit and a signal clamping circuit using a level-down shifter. The interface circuit includes the level-down shifter between a first power circuit driven by a first power and a second power circuit driven by a second power. The level-down shifter converts an output of the first power circuit that has a voltage level of the first power into an output of a voltage level of the second power. The level-down shifter includes a first circuit unit, a second circuit unit, a third circuit unit, and a fourth circuit unit. The first circuit unit is driven by the first power and receives the output of the first power circuit. The second circuit unit is driven by the second power and receives the output of the first power circuit. The third circuit unit is driven by the second power and receives the output of the first power circuit. The fourth circuit unit is driven by the second power, receives an output of the third circuit unit, and is connected to an output of the second circuit unit.