公开(公告)号：US20230074516A1

公开(公告)日：2023-03-09

申请号：US17447153

申请日：2021-09-08

Applicant: Cisco Technology, Inc.

Inventor： Tao LING ,  Shiyi CHEN ,  Xunyuan ZHANG ,  Prakash B. GOTHOSKAR

IPC: G02B6/122 ,  F21V8/00

Abstract: Embodiments presented in this disclosure generally relate to an optical device having a grating coupler for redirection of optical signals. One embodiment includes a grating coupler. The grating coupler generally includes a waveguide layer, a thickness of a waveguide layer portion of the waveguide layer being tapered, the thickness defining a direction, and a grating layer disposed above the waveguide layer and perpendicular to the direction where at least a grating layer portion of the grating layer overlaps the waveguide layer portion of the waveguide layer along the direction. Some embodiments are directed to grating coupler implemented with material layers above and a reflector layer below a grating layer, facilitating redirection and confinement of light that improves coupling loss and bandwidth. The material layers and reflector layer above and below the grating layer may be implemented with or without the waveguide layer being tapered.

公开(公告)号：US20210157068A1

公开(公告)日：2021-05-27

申请号：US16698458

申请日：2019-11-27

Applicant: Cisco Technology, Inc.

Inventor： Prakash B. GOTHOSKAR ,  Vipulkumar K. PATEL ,  Soha NAMNABAT ,  Ravi S. TUMMIDI

IPC: G02B6/42

Abstract: Embodiments described herein include an apparatus comprising a semiconductor-based photodiode disposed on a semiconductor layer, and an optical waveguide spaced apart from the semiconductor layer and evanescently coupled with a depletion region of the photodiode. The photodiode may be arranged as a vertical photodiode or a lateral photodiode.

公开(公告)号：US20200183198A1

公开(公告)日：2020-06-11

申请号：US16789317

申请日：2020-02-12

Applicant: Cisco Technology, Inc.

Inventor： Donald ADAMS ,  Prakash B. GOTHOSKAR ,  Vipulkumar PATEL ,  Mark WEBSTER

IPC: G02F1/025 ,  G02F1/225 ,  G02B6/136 ,  G02B6/132 ,  G02F1/01

Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

公开(公告)号：US20170269393A1

公开(公告)日：2017-09-21

申请号：US15615290

申请日：2017-06-06

Applicant: Cisco Technology, Inc.

Inventor： Donald ADAMS ,  Prakash B. GOTHOSKAR ,  Vipulkumar PATEL ,  Mark WEBSTER

IPC: G02F1/025 ,  G02B6/132 ,  G02B6/136

Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

公开(公告)号：US20250030497A1

公开(公告)日：2025-01-23

申请号：US18353781

申请日：2023-07-17

Applicant: Cisco Technology, Inc.

Inventor： Vipulkumar K. PATEL ,  Romesh Kumar NANDWANA ,  Norbert SCHLEPPLE ,  Eng Wen ONG ,  Prakash B. GOTHOSKAR

IPC: H04J14/06 ,  H04B10/67

Abstract: The present disclosure describes an optical system and method of operating the optical system. The optical system includes a substrate and first and second photonic integrated circuits. The first photonic integrated circuit is positioned on the substrate. The second photonic integrated circuit is positioned on the first photonic integrated circuit. The second photonic integrated circuit receives a first optical signal that includes a first mode and a second mode. The second photonic integrated circuit includes a polarization splitter rotator, a first demultiplexer, and a second demultiplexer. The polarization splitter rotator separates the first optical signal into a second optical with the first mode and a third optical signal with the first mode. The first and second demultiplexers separate the second and third optical signals into first and second pluralities of optical signals. The first and second pluralities of optical signals couple into the first photonic integrated circuit.

公开(公告)号：US20230290898A1

公开(公告)日：2023-09-14

申请号：US18318593

申请日：2023-05-16

Applicant: Cisco Technology, Inc.

Inventor： Xunyuan ZHANG ,  Li LI ,  Prakash B. GOTHOSKAR ,  Soha NAMNABAT

IPC: H01L31/18 ,  H01L31/0368 ,  H01L31/105 ,  H01L31/036

CPC classification number: H01L31/1812 ,  H01L31/03682 ,  H01L31/105 ,  H01L31/1892 ,  H01L31/1808 ,  H01L31/036

Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

公开(公告)号：US20230119450A1

公开(公告)日：2023-04-20

申请号：US17451247

申请日：2021-10-18

Applicant: Cisco Technology, Inc.

Inventor： Yi Ho LEE ,  Tao LING ,  Ravi S. TUMMIDI ,  Mark A. WEBSTER ,  Prakash B. GOTHOSKAR

IPC: G02B6/12 ,  H04L1/00

Abstract: Fabrication-tolerant on-chip multiplexers and demultiplexers are provides via a lattice filter interleaver configured to receive an input signal including a plurality of individual signals and to produce a first interleaved signal with a first subset of the plurality of individual signals and a second interleaved signal with a second subset of the plurality of individual signals; a first Bragg interleaver configured to receive the first interleaved signal and produce a first output signal including a first individual signal of the plurality of individual signals and a second output signal including a second individual signal of the plurality of individual signals; and a second Bragg interleaver configured to receive the second interleaved signal and produce a third output signal including a third individual signal of the plurality of individual signals and a fourth output signal including a fourth individual signal of the plurality of individual signals.

公开(公告)号：US20220082875A1

公开(公告)日：2022-03-17

申请号：US17456468

申请日：2021-11-24

Applicant: Cisco Technology, Inc.

Inventor： Donald ADAMS ,  Prakash B. GOTHOSKAR ,  Vipulkumar PATEL ,  Mark WEBSTER

IPC: G02F1/025 ,  G02F1/01 ,  G02B6/132 ,  G02B6/136 ,  G02F1/225

Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

公开(公告)号：US20210157033A1

公开(公告)日：2021-05-27

申请号：US16696957

申请日：2019-11-26

Applicant: Cisco Technology, Inc.

Inventor： Xunyuan ZHANG ,  Shiyi CHEN ,  Tao LING ,  Prakash B. GOTHOSKAR

IPC: G02B1/113 ,  G02B6/136 ,  G01M11/00

Abstract: Embodiments herein describe a photonic platform where an AR coating is disposed between an optical grating and a semiconductor substrate. In one embodiment, the optical grating is disposed within an insulative layer. A first side of the insulative layer provides an optical interface where an external optical source can transmit an optical signal into, or a receive an optical signal from, the grating. A second, opposite side of the insulative layer contacts the AR coating. When the external optical source transmits light through the first side of the insulative layer, some of the light passes through the grating and reaches the AR coating. The AR coating prevents this light from being reflected back to the grating by the semiconductor layer which can cause interference that varies the coupling efficiency of the grating.