LAYERED PROCESS-CONSTRUCTED DOUBLE-WINDING EMBEDDED SOLENOID INDUCTOR

    公开(公告)号:US20240136105A1

    公开(公告)日:2024-04-25

    申请号:US18383816

    申请日:2023-10-25

    CPC classification number: H01F27/2804 H01F17/0013 H01F27/24 H01F41/08

    Abstract: A method for constructing a solenoid inductor of an IC package with active/passive devices includes positioning an inner winding substantially around a magnetic core, positioning an outer winding substantially around the inner winding, and using a layered process to perform positioning the inner and outer windings. The layered process includes processing a first conducting layer as a bottom layer of the outer winding, above processing a first dielectric layer, above processing a second conducting layer as a bottom layer of the inner winding, above processing a second dielectric layer, above processing a magnetic core layer, above processing a third dielectric layer, above processing a third conducting layer as a top layer of the inner winding, above processing a fourth dielectric layer, above processing a fourth conducting layer as a top layer of the outer winding, above processing a fifth dielectric layer, and the inner and outer windings are electrically connected.

    SYMMETRIC LAYOUT FOR HIGH-VOLTAGE AMPLIFIER

    公开(公告)号:US20220384413A1

    公开(公告)日:2022-12-01

    申请号:US17303251

    申请日:2021-05-25

    Abstract: A packaged semiconductor die may include a package terminal array comprising a plurality of terminals, wherein a spacing between the plurality of terminals of the ball grid array is less than 0.5 mm. First and second high-voltage circuits of the die may output a differential signal to a first and second terminal that may exceed 15 volts, in which the first high-voltage circuit and the second high-voltage circuit are positioned symmetrically around an axis and in which the first terminal and the second terminal are located at an edge of the package terminal array. A low-voltage circuit may be coupled to a third terminal and positioned between the first high-voltage circuit and the second high-voltage circuit, wherein the low-voltage circuit comprises circuitry organized in columns aligned along an axis and having a width defined by a fraction of the terminal spacing pitch.

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