SEGMENTED-WIDTH THIN-FILM SENSE RESISTORS WITH WIDTH-DISTRIBUTED TERMINAL LAND CONNECTIONS

    公开(公告)号:US20240361356A1

    公开(公告)日:2024-10-31

    申请号:US18140456

    申请日:2023-04-27

    IPC分类号: G01R1/20 G01R19/00

    CPC分类号: G01R1/203 G01R19/0092

    摘要: A thin-film resistor circuit for an integrated circuit provides low resistance by segmenting a thin-film resistor to provide a wider effective thin-film resistor in a smaller die. The die includes a substrate, multiple electronic devices integrated on the substrate and interconnected to form at least a portion of an electronic circuit, a plurality of interconnect lands arranged in a grid that interconnect the devices with external terminals, and a thin-film resistor implemented by two or more thin-film resistor segments that operate in parallel in the circuit. The segments are disposed between different pairs of adjacent columns of the grid interconnect lands, with one of the thin-film resistor segments electrically connected along its width to lands of a first column of the grid of interconnect lands, and another one of the thin-film resistor segments is electrically connected along its width to lands of a second column of the grid interconnect lands.

    LAYERED PROCESS-CONSTRUCTED DOUBLE-WINDING EMBEDDED SOLENOID INDUCTOR

    公开(公告)号:US20240136105A1

    公开(公告)日:2024-04-25

    申请号:US18383816

    申请日:2023-10-25

    IPC分类号: H01F27/28 H01F17/00 H01F27/24

    摘要: A method for constructing a solenoid inductor of an IC package with active/passive devices includes positioning an inner winding substantially around a magnetic core, positioning an outer winding substantially around the inner winding, and using a layered process to perform positioning the inner and outer windings. The layered process includes processing a first conducting layer as a bottom layer of the outer winding, above processing a first dielectric layer, above processing a second conducting layer as a bottom layer of the inner winding, above processing a second dielectric layer, above processing a magnetic core layer, above processing a third dielectric layer, above processing a third conducting layer as a top layer of the inner winding, above processing a fourth dielectric layer, above processing a fourth conducting layer as a top layer of the outer winding, above processing a fifth dielectric layer, and the inner and outer windings are electrically connected.

    SYMMETRIC LAYOUT FOR HIGH-VOLTAGE AMPLIFIER

    公开(公告)号:US20220384413A1

    公开(公告)日:2022-12-01

    申请号:US17303251

    申请日:2021-05-25

    摘要: A packaged semiconductor die may include a package terminal array comprising a plurality of terminals, wherein a spacing between the plurality of terminals of the ball grid array is less than 0.5 mm. First and second high-voltage circuits of the die may output a differential signal to a first and second terminal that may exceed 15 volts, in which the first high-voltage circuit and the second high-voltage circuit are positioned symmetrically around an axis and in which the first terminal and the second terminal are located at an edge of the package terminal array. A low-voltage circuit may be coupled to a third terminal and positioned between the first high-voltage circuit and the second high-voltage circuit, wherein the low-voltage circuit comprises circuitry organized in columns aligned along an axis and having a width defined by a fraction of the terminal spacing pitch.