公开(公告)号：US5512776A

公开(公告)日：1996-04-30

申请号：US192801

申请日：1988-05-11

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L23/482 ,  H01L29/06 ,  H01L29/864

CPC分类号： H01L29/864 ,  H01L23/4821 ,  H01L23/4824 ,  H01L29/0649 ,  H01L2924/0002

摘要： A monolithic circuit including an IMPATT with the IMPATT formed as a plurality of parallel vertical fingers or an array of vertical mesas having a common doped region to apread the area for heat dissipation through the substrate.

摘要翻译： 包括具有IMPATT的IMPATT的单片电路，其形成为多个平行垂直指状物或具有公共掺杂区域的垂直台面阵列，以覆盖该区域以通过衬底散热。

公开(公告)号：US5468658A

公开(公告)日：1995-11-21

申请号：US164641

申请日：1993-12-07

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  Y10S148/072

摘要： This is a p-n junction device and the device comprises: a substrate 10 composed of a semiconductor material; a heavily doped n type sub-collector layer 14 over the substrate; a n type collector layer 16 over the sub-collector layer; a heavily doped p type first base layer 18, over the collector layer; a p type second base layer 20, substantially thinner than the first base layer, over the first base layer, with the second base layer being less heavily doped than the first base layer; and a n type emitter layer 24 over the second base layer, whereby, the second base layer serves as a diffusion barrier between the base and the emitter. Other devices and methods are also disclosed.

摘要翻译： 这是p-n结器件，该器件包括：由半导体材料构成的衬底10; 在衬底上方的重掺杂n型子集电极层14; 在副集电极层上方的n型集电极层16; 在集电极层上方的重掺杂p型第一基极层18; 在第一基底层上的基本上比第一基底层薄的p型第二基底层20，第二基底层比第一基底层重掺杂; 以及在第二基极层上的n型发射极层24，由此，第二基极层用作基极和发射极之间的扩散阻挡层。 还公开了其它装置和方法。

公开(公告)号：US5344786A

公开(公告)日：1994-09-06

申请号：US942474

申请日：1992-09-09

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/331 ,  H01L27/12 ,  H01L29/205 ,  H01L29/417 ,  H01L29/73 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/66318 ,  H01L21/28 ,  Y10S148/072

摘要： A method of fabricating heterojunction bipolar transistors (HBTs) including epitaxial growth of collector, base and emitter layers, allowing for self-aligned emitter-base contacts to minimize series base resistance and to reduce total base-collector capacitance.

摘要翻译： 一种制造异质结双极晶体管（HBT）的方法，其包括集电极，基极和发射极层的外延生长，允许自对准的发射极 - 基极接触，以使串联基极电阻最小化并降低总集电极电容。

公开(公告)号：US5132764A

公开(公告)日：1992-07-21

申请号：US672809

申请日：1991-03-21

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/1004 ,  Y10S148/072

摘要： This is a p-n junction device and the device comprises: a substrate 10 composed of a semiconductor material; a heavily doped n type sub-collector layer 14 over the substrate; a n type collector layer 16 over the sub-collector layer; a heavily doped p type first base layer 18, over the collector layer; a p type second base layer 20, substantially thinner than the first base layer, over the first base layer, with the second base layer being less heavily doped than the first base layer; and a n type emitter layer 24 over the second base layer, whereby, the second base layer serves as a diffusion barrier between the base and the emitter. Other devices and methods are also disclosed.

公开(公告)号：US4706041A

公开(公告)日：1987-11-10

申请号：US868212

申请日：1986-05-28

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H03B9/14 ,  H01P3/08 ,  H01P7/08 ,  H03B7/14 ,  H03F3/60

CPC分类号： H03B9/143 ,  Y10S257/926

摘要： Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the periodic diode structures as the gain element of microwave amplifiers and oscillators. Preferred embodiments also place capacitors between the diodes to fix nodes in the electric field and increase the effective structure size.

摘要翻译： 公开了具有沿着传输线（38-32）周期定位以模拟分布式二极管的IMPATT型二极管（34）的结构（30）。 优选实施例包括结合周期性二极管结构作为微波放大器和振荡器的增益元件。 优选实施例还将二极管之间的电容器放置在电场中以固定节点并增加有效结构尺寸。

公开(公告)号：US4596070A

公开(公告)日：1986-06-24

申请号：US630486

申请日：1984-07-13

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L21/8222 ,  H01L23/482 ,  H01L27/06 ,  H01L29/06 ,  H01L29/861 ,  H01L29/864 ,  H01L29/12 ,  H01L29/40

CPC分类号： H01L29/0649 ,  H01L23/482 ,  H01L29/864 ,  H01L2924/0002 ,  Y10S148/075 ,  Y10S148/135

摘要： The disclosure relates to a semiconductor substrate having an active area for formation of an IMPATT device which is formed as a plurality of separated fingers having a common n+ region to spread the area over which the IMPATT is disposed and which provides such additional area for dissipation of heat through the substrate.

摘要翻译： 本公开涉及具有用于形成IMPATT器件的有源区域的半导体衬底，其形成为具有公共n +区域的多个分离的指状物，以扩展其上设置有IMPATT的区域，并且提供这样的附加区域用于耗散 通过基底的热量。

公开(公告)号：US20130095606A1

公开(公告)日：2013-04-18

申请号：US13271310

申请日：2011-10-12

申请人： Burhan Bayraktaroglu ,  Kevin Leedy

发明人： Burhan Bayraktaroglu ,  Kevin Leedy

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L29/7869

摘要： A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.

摘要翻译： 提供了制造薄膜晶体管的方法。 多个层被沉积在基底上。 多个层包括导电栅极接触层，栅极绝缘体层，未掺杂沟道层，蚀刻停止层和导电接触层。 蚀刻停止层位于导电接触层和未掺杂沟道层之间。 导电接触层的一部分被选择性地去除，同时在选择性去除期间通过蚀刻停止层防止去除一部分未掺杂沟道层。 蚀刻停止层的一部分被选择性地去除，并且通过在空气中氧化蚀刻停止层的暴露部分，蚀刻停止层的暴露部分由导体转变成绝缘体。 选择性地去除多个层中的剩余层的一部分以形成薄膜晶体管。

公开(公告)号：US5496755A

公开(公告)日：1996-03-05

申请号：US287378

申请日：1994-08-08

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L27/06 ,  H01L21/70

CPC分类号： H01L27/0605

摘要： Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit.

摘要翻译： 集成电路和制造方法将双端器件如IMPATT二极管（446）和肖特基二极管（454）以及诸如n沟道MESFET（480）的三端器件并入单片集成电路中。

公开(公告)号：US5446294A

公开(公告)日：1995-08-29

申请号：US738691

申请日：1991-07-31

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L29/205 ,  H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/737 ,  H01L39/22 ,  H01L29/06

CPC分类号： H01L29/66318 ,  H01L29/1004 ,  H01L29/7371

摘要： Generally, and in one form of the invention, a microwave heterojunction bipolar transistor suitable for low-power, low-noise and high-power applications having an emitter 108, a base 126 and a collector 24 is disclosed, wherein the base 126 is composed of one or more islands 126 of semiconductor material. The one or more islands 126 are formed so that they do not cross any boundaries of the active area 60 of the transistor.Other devices, systems and methods are also disclosed.

摘要翻译： 通常，在本发明的一种形式中，公开了适用于具有发射极108，基极126和集电极24的低功率，低噪声和大功率应用的微波异质结双极晶体管，其中基底126组成 半导体材料的一个或多个岛126。 形成一个或多个岛126使得它们不跨越晶体管的有源区60的任何边界。 还公开了其他装置，系统和方法。

公开(公告)号：US5347149A

公开(公告)日：1994-09-13

申请号：US443538

申请日：1989-11-29

申请人： Burhan Bayraktaroglu

发明人： Burhan Bayraktaroglu

IPC分类号： H01L27/06 ,  H01L29/161 ,  H01L29/90

CPC分类号： H01L27/0605

摘要： Integrated circuits and fabrication methods incorporating both two-terminal devices such as IMPATT diodes (446) and Schottky diodes (454) and three-terminal devices such as n-channel MESFETs (480) in a monolithic integrated circuit.

摘要翻译： 集成电路和制造方法将双端器件如IMPATT二极管（446）和肖特基二极管（454）以及诸如n沟道MESFET（480）的三端器件并入单片集成电路中。