公开(公告)号：US20130095606A1

公开(公告)日：2013-04-18

申请号：US13271310

申请日：2011-10-12

申请人： Burhan Bayraktaroglu ,  Kevin Leedy

发明人： Burhan Bayraktaroglu ,  Kevin Leedy

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L29/7869

摘要： A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.

摘要翻译： 提供了制造薄膜晶体管的方法。 多个层被沉积在基底上。 多个层包括导电栅极接触层，栅极绝缘体层，未掺杂沟道层，蚀刻停止层和导电接触层。 蚀刻停止层位于导电接触层和未掺杂沟道层之间。 导电接触层的一部分被选择性地去除，同时在选择性去除期间通过蚀刻停止层防止去除一部分未掺杂沟道层。 蚀刻停止层的一部分被选择性地去除，并且通过在空气中氧化蚀刻停止层的暴露部分，蚀刻停止层的暴露部分由导体转变成绝缘体。 选择性地去除多个层中的剩余层的一部分以形成薄膜晶体管。

公开(公告)号：US20070044289A1

公开(公告)日：2007-03-01

申请号：US11216261

申请日：2005-08-31

申请人： John Ebel ,  Rebecca Cortez ,  Richard Strawser ,  Kevin Leedy

发明人： John Ebel ,  Rebecca Cortez ,  Richard Strawser ,  Kevin Leedy

IPC分类号： H01G9/00

CPC分类号： H01G5/18 ,  G11C11/565 ,  H01L28/60 ,  Y10T29/417 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49005 ,  Y10T29/4908

摘要： A digital variable capacitor package is provided as having a ground plane disposed on predetermined portion of the top surface of a substrate. An elongated signal electrode may also be disposed on the substrate and including a first end defining an input and a second end extending to a substantially central region of the top surface of the substrate. This elongated signal electrode is disposed to be electrically isolated from the ground plane. A number of elongated cantilevers are disposed on the substrate and each include first ends coupled to the second end of the signal electrode and each further include second ends suspended over different predetermined portions of the ground plane. In operation, one or more of the cantilevers may be actuated to move portion thereof into close proximity to the ground plane for providing one or more discrete capacitance values.

摘要翻译： 提供数字可变电容器封装，其具有设置在基板的顶表面的预定部分上的接地平面。 细长的信号电极也可以设置在衬底上，并且包括限定输入的第一端和延伸到衬底的顶表面的基本中心区域的第二端。 该细长信号电极设置成与接地平面电隔离。 许多细长的悬臂设置在基板上，并且每个包括耦合到信号电极的第二端的第一端，并且每个还包括悬挂在接地平面的不同预定部分上的第二端。 在操作中，可以致动一个或多个悬臂以将其部分移动到靠近接地平面以提供一个或多个离散电容值。

公开(公告)号：US08728861B2

公开(公告)日：2014-05-20

申请号：US13271310

申请日：2011-10-12

申请人： Burhan Bayraktaroglu ,  Kevin Leedy

发明人： Burhan Bayraktaroglu ,  Kevin Leedy

IPC分类号： H01L21/00

CPC分类号： H01L29/7869

摘要： A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.

摘要翻译： 提供了制造薄膜晶体管的方法。 多个层被沉积在基底上。 多个层包括导电栅极接触层，栅极绝缘体层，未掺杂沟道层，蚀刻停止层和导电接触层。 蚀刻停止层位于导电接触层和未掺杂沟道层之间。 导电接触层的一部分被选择性地去除，同时在选择性去除期间通过蚀刻停止层防止去除一部分未掺杂沟道层。 蚀刻停止层的一部分被选择性地去除，并且通过在空气中氧化蚀刻停止层的暴露部分，蚀刻停止层的暴露部分由导体转变成绝缘体。 选择性地去除多个层中的剩余层的一部分以形成薄膜晶体管。