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11.发明授权公开(公告)号：US11011246B2
公开(公告)日：2021-05-18
申请号：US16572136
申请日：2019-09-16
Inventor： Honggang Gu , Junsheng Chen , Kui Gong
IPC: G09G3/36 , G11C19/28 , G11C11/4074 , G11C7/12 , G11C7/22
Abstract: A shift register, a gate driving circuit, a display device, and a driving method of a node sustaining circuit are disclosed. The shift register includes an input sub-circuit, a reset sub-circuit, an output sub-circuit, a pull-down sub-circuit, a first control sub-circuit, a second control sub-circuit, a first storage sub-circuit, and a node sustaining circuit. The node sustaining circuit is configured to sustain the potential of a node, which is one of a pull-up node or a pull-down node in the shift register.
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12.发明申请公开(公告)号：US20180226604A1
公开(公告)日：2018-08-09
申请号：US15571120
申请日：2017-05-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Kui Gong , Xianxue Duan , Hsiaowen Hung
CPC classification number: H01L51/5246 , H01L27/32 , H01L51/5203 , H01L51/524 , H01L51/5253 , H01L51/5259 , H01L51/56 , H01L2251/5369
Abstract: The present application discloses a display panel. The display panel includes a first substrate; and a second substrate facing the first substrate. The first substrate includes a base substrate and a passivation layer on the base substrate. The passivation layer includes a base portion and a protruding portion on a side of the base portion distal to the base substrate. The protruding portion is in a peripheral area of the display panel and encloses a display area of the display panel.
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公开(公告)号：US11804496B2
公开(公告)日：2023-10-31
申请号：US17048138
申请日：2020-04-22
Inventor： Kui Gong , Li Li , Wei Sun , Yuhu Zhang , Lei Yu , Hongwei Wang , Ru Xu
CPC classification number: H01L27/1251 , H01L27/127 , H01L27/1225 , H01L27/1262 , H01L27/1288
Abstract: The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.
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14.发明授权公开(公告)号：US11054707B2
公开(公告)日：2021-07-06
申请号：US15774576
申请日：2017-10-09
Inventor： Xianxue Duan , Kui Gong
IPC: G02F1/1362 , H01L21/02 , H01L21/311 , H01L21/3115 , H01L21/027 , H01L27/12 , G02F1/1368 , G02F1/1343
Abstract: A method of manufacturing a via hole, a method of manufacturing an array substrate and an array substrate are provided. The method of manufacturing an via hole includes: providing a base substrate; forming an insulation layer on the base substrate; etching the insulation layer by using a first etching process to forma groove in the insulation layer; performing an ion implantation process with ions on a portion of the insulation layer exposed by the groove to form an ion implantation region; and etching a portion of the insulation layer in the ion implantation region by using a second etching process to form a via hole penetrating the insulation layer.
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15.发明申请公开(公告)号：US20200303028A1
公开(公告)日：2020-09-24
申请号：US16572136
申请日：2019-09-16
Inventor： Honggang Gu , Junsheng Chen , Kui Gong
IPC: G11C19/28 , G11C7/22 , G11C7/12 , G11C11/4074
Abstract: A shift register, a gate driving circuit, a display device, and a driving method of a node sustaining circuit are disclosed. The shift register includes an input sub-circuit, a reset sub-circuit, an output sub-circuit, a pull-down sub-circuit, a first control sub-circuit, a second control sub-circuit, a first storage sub-circuit, and a node sustaining circuit. The node sustaining circuit is configured to sustain the potential of a node, which is one of a pull-up node or a pull-down node in the shift register.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10748944B2
公开(公告)日：2020-08-18
申请号：US16327153
申请日：2018-05-09
Inventor： Kui Gong , Xianxue Duan , Cheng Chen
IPC: H01L27/12 , H01L21/265 , H01L21/324
Abstract: A method for manufacturing an array substrate, including: forming a semiconductor material film on a substrate, the method further including: forming a metal film covering the semiconductor material film; and performing a single patterning process on the metal film and the semiconductor material film to form an active layer, a semiconductor material remained pattern and a first electrode of a storage capacitor. The semiconductor material remained pattern is in a same layer as the active layer; and the first electrode of the storage capacitor is formed of the metal film and is on a side, away from the substrate, of the semiconductor material remained pattern. An array substrate and a display device are also provided.
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公开(公告)号：US10431611B2
公开(公告)日：2019-10-01
申请号：US15945476
申请日：2018-04-04
Inventor： Xianxue Duan , Kui Gong
IPC: H01L21/02 , H01L21/311 , H01L27/12 , H01L29/786 , H01L29/66
Abstract: A method for manufacturing a thin film transistor, a method for manufacturing an array substrate, an array substrate, and a display device are provided. The method for manufacturing the thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the surface of the active layer; and processing the metal layer using a patterning process for one time and an oxidation treatment process, so that the metal layer forms a source electrode, a drain electrode and a passivation layer; wherein the source electrode and the drain electrode are in contact with the active layer, and the passivation layer is formed on a side of the source electrode and the drain electrode away from the active layer.
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公开(公告)号：US20190293847A1
公开(公告)日：2019-09-26
申请号：US16318927
申请日：2018-05-21
Inventor： Kui Gong , Xianxue Duan
IPC: G02B5/20 , G02F1/1362 , G02F1/1339
Abstract: A color filter substrate, a manufacturing method therefor, and a display device. The color filter substrate includes a base substrate, a conductive layer located on the base substrate; and a color photoresist located on one side of the conductive layer distant from the base substrate. The color resist is electrically conductive and is electrically connected to the conductive layer.
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公开(公告)号：US10224416B2
公开(公告)日：2019-03-05
申请号：US15809673
申请日：2017-11-10
Inventor： Kui Gong
IPC: H01L29/66 , H01L21/027 , H01L29/786 , H01L21/265 , H01L21/306 , H01L21/02 , H01L27/12 , H01L21/311 , H01L29/167
Abstract: The present disclosure provides a method for manufacturing an LTPS TFT, including steps of: forming patterns of a p-Si layer and a protection layer on a base substrate, the protection layer covering the p-Si layer; performing a first ion injection operation so as to inject ions through the protection layer into the p-Si layer, thereby to form a heavily-drain-doped region; and performing an ashing operation and performing a second ion injection operation, to form a pattern of an LTPS active layer including a heavily-drain-doped region, a lightly-drain-doped region and an undoped region.
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公开(公告)号：US20190067331A1
公开(公告)日：2019-02-28
申请号：US16034429
申请日：2018-07-13
Abstract: This disclosure discloses a display panel, a production method thereof, and a display apparatus. This method comprises: forming a pattern of a first metal layer on a base substrate and a pattern of a metal oxide conductive layer being electrically connected to the first metal layer by at least one through hole at a side of the first metal layer away from the base substrate; forming a reductive metal compound layer on a surface of the first metal layer at a side away from the base substrate before forming the pattern of the metal oxide conductive layer; treating the reductive metal compound layer and the metal oxide conductive layer after forming the pattern of the metal oxide conductive layer so that the reductive metal compound layer is oxidized into a second metal layer and metal particles are produced at the surface of the metal oxide conductive layer.
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