公开(公告)号：US09964863B1

公开(公告)日：2018-05-08

申请号：US15435007

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20

CPC classification number: G03F7/70716 ,  G03F7/70725 ,  H01L21/0273

Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.

公开(公告)号：US11899366B2

公开(公告)日：2024-02-13

申请号：US17468536

申请日：2021-09-07

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  H01L21/67 ,  G03F7/40 ,  H01L21/687 ,  G03F7/20

CPC classification number: G03F7/2035 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/68764

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US10203604B2

公开(公告)日：2019-02-12

申请号：US14989488

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: G03F7/20 ,  H01L21/687

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US09958782B2

公开(公告)日：2018-05-01

申请号：US15196725

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Gregory J. Wilson ,  Viachslav Babayan

IPC: H01L21/67 ,  C23C16/50 ,  C23C16/56 ,  G03F7/38 ,  C23C16/54 ,  H01L21/677

CPC classification number: G03F7/38 ,  C23C16/54 ,  C23C16/56 ,  H01L21/67011 ,  H01L21/6719 ,  H01L21/67751

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

公开(公告)号：US20180082861A1

公开(公告)日：2018-03-22

申请号：US15828112

申请日：2017-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/683

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US20180051368A1

公开(公告)日：2018-02-22

申请号：US15600247

申请日：2017-05-19

Applicant: Applied Materials, Inc.

Inventor： Jingjing Liu ,  Zhong Qiang Hua ,  Adolph Miller Allen ,  Michael W. Stowell ,  Srinivas D. Nemani ,  Chentsau Ying ,  Bhargav Citla ,  Viachslav Babayan ,  Andrej Halabica

IPC: C23C14/06 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54 ,  H01J37/34 ,  H01L21/02

CPC classification number: C23C14/0605 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/354 ,  C23C14/541 ,  C23C14/542 ,  H01J37/32724 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3467 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/0332 ,  H01L21/31144

Abstract: A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.

公开(公告)号：US12057329B2

公开(公告)日：2024-08-06

申请号：US15828112

申请日：2017-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3105

CPC classification number: H01L21/67069 ,  H01J37/32146 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01J2237/334 ,  H01L21/3105

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US11094573B2

公开(公告)日：2021-08-17

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu Qiao ,  Qiwei Liang ,  Viachslav Babayan ,  Seshadri Ramaswami ,  Srinivas D. Nemani

IPC: H01L21/683 ,  C23C16/56 ,  C23C16/40

Abstract: Disclosed herein is an electrostatic chuck (ESC) carrier. The ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. A first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. A first conductor is in the first through substrate opening, and a second conductor is in the second through substrate opening. The ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. An oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US10954594B2

公开(公告)日：2021-03-23

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Qiwei Liang ,  Tobin Kaufman-Osborn ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/455

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US10858727B2

公开(公告)日：2020-12-08

申请号：US15600247

申请日：2017-05-19

Applicant: Applied Materials, Inc.

Inventor： Jingjing Liu ,  Zhong Qiang Hua ,  Adolph Miller Allen ,  Michael W. Stowell ,  Srinivas D. Nemani ,  Chentsau Ying ,  Bhargav Citla ,  Viachslav Babayan ,  Andrej Halabica

IPC: H01J37/34 ,  C23C14/06 ,  C23C14/35 ,  H01J37/32 ,  C23C14/54 ,  H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  C23C14/34

Abstract: A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.