Abstract:
An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.
Abstract:
The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 μm, and a height difference between the substrate and the edge ring is less than about (+/−) 300 μm. The resistivity of the ring is less than about 50 Ohm-cm.
Abstract:
An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.
Abstract:
An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.
Abstract translation:一种制品在身体的至少一个表面上包括主体和保形层。 共形保护层是厚度小于1000μm的耐等离子体稀土氧化物膜,其中耐等离子体稀土氧化物选自YF 3,Er 4 Al 2 O 9,ErAlO 3和包含Y 4 Al 2 O 9的陶瓷化合物和固体 Y2O3-ZrO2溶液。