公开(公告)号：US20220163846A1

公开(公告)日：2022-05-26

申请号：US17100422

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02F1/1335 ,  H01L21/768 ,  G02F1/1362 ,  H01L23/522

Abstract: Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.

公开(公告)号：US11908678B2

公开(公告)日：2024-02-20

申请号：US17149399

申请日：2021-01-14

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan ,  Joseph Salfelder

IPC: H01L21/02 ,  H01L21/4757

CPC classification number: H01L21/02024 ,  H01L21/02019 ,  H01L21/47573

Abstract: Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.

公开(公告)号：US11586067B2

公开(公告)日：2023-02-21

申请号：US17100407

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02F1/1335 ,  G02F1/1362

Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.

公开(公告)号：US20220223402A1

公开(公告)日：2022-07-14

申请号：US17149399

申请日：2021-01-14

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan ,  Joseph Salfelder

IPC: H01L21/02 ,  H01L21/4757

Abstract: Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.

公开(公告)号：US20220163845A1

公开(公告)日：2022-05-26

申请号：US17100407

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02F1/1335 ,  H01L21/768 ,  G02F1/1362

Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.

公开(公告)号：US20220163707A1

公开(公告)日：2022-05-26

申请号：US17100416

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02B5/08

Abstract: Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.