公开(公告)号：US12001197B2

公开(公告)日：2024-06-04

申请号：US17230897

申请日：2021-04-14

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Elizabeth Neville ,  Umesh Madhav Kelkar ,  Mark R. Denome ,  Prashanth Kothnur ,  Karthik Ramanathan ,  Kartik Shah ,  Orlando Trejo ,  Sergey Meirovich

IPC: H01L21/67 ,  G05B13/02 ,  G05B19/418 ,  G05B19/41

CPC classification number: G05B19/41885 ,  G05B13/027 ,  G05B2219/32335 ,  G05B2219/32359 ,  G05B2219/45031 ,  H01L21/67276

Abstract: A method including receiving, by a processing device, a first selection of at least one of a first fabrication process or first manufacturing equipment to perform manufacturing operations of the first fabrication process. The method can further include inputting the first selection into a digital replica of the first manufacturing equipment wherein the digital replica outputs physical conditions of the first fabrication process. The method may further include determining environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process. The processing device may further determine a modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment. The method can further include performing at least one of applying the modification to the first fabrication.

公开(公告)号：US11970775B2

公开(公告)日：2024-04-30

申请号：US16533357

申请日：2019-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Prashanth Kothnur ,  Satish Radhakrishnan ,  Alexander Lerner ,  Sergei Klimovich ,  Roey Shaviv

IPC: C23C16/455 ,  B05B1/18 ,  B05B1/20

CPC classification number: C23C16/45548 ,  B05B1/185 ,  B05B1/20

Abstract: Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

公开(公告)号：US11692262B2

公开(公告)日：2023-07-04

申请号：US16930794

申请日：2020-07-16

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/3407 ,  C23C14/3471

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US20230078146A1

公开(公告)日：2023-03-16

申请号：US17476408

申请日：2021-09-15

Applicant: Applied Materials, Inc.

Inventor： Preetham Prahallada Rao ,  Prashanth Kothnur

IPC: G06F30/27 ,  G06N20/20 ,  G06K9/62 ,  H01L21/67

Abstract: A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

公开(公告)号：US20220341029A1

公开(公告)日：2022-10-27

申请号：US17861969

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US11183375B2

公开(公告)日：2021-11-23

申请号：US14606367

申请日：2015-01-27

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Deepak Jadhav ,  Ashish Goel ,  Hanbing Wu ,  Prashanth Kothnur ,  Chi Hong Ching

IPC: C23C14/34 ,  H01J37/34 ,  C23C16/34 ,  C23C16/40 ,  C23C14/54 ,  C23C14/35

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

公开(公告)号：US12203163B2

公开(公告)日：2025-01-21

申请号：US17334630

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi Yoshidome ,  Suhas Bangalore Umesh ,  Sushil Arun Samant ,  Martin Lee Riker ,  Wei Lei ,  Kishor Kumar Kalathiparambil ,  Shirish A. Pethe ,  Fuhong Zhang ,  Prashanth Kothnur ,  Andrew Tomko

IPC: C23C14/35 ,  H01J37/34

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

公开(公告)号：US11655534B2

公开(公告)日：2023-05-23

申请号：US17857370

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting Hou ,  Jianxin Lei ,  Jothilingam Ramalingam ,  Prashanth Kothnur ,  William R. Johanson

IPC: H01J37/32 ,  C23C14/18 ,  C23C14/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

CPC classification number: C23C14/18 ,  C23C14/14 ,  C23C14/16 ,  C23C14/3414 ,  C23C14/354 ,  H01J37/32027 ,  H01J37/32082

Abstract: Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US11600476B2

公开(公告)日：2023-03-07

申请号：US17503994

申请日：2021-10-18

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Deepak Jadhav ,  Ashish Goel ,  Hanbing Wu ,  Prashanth Kothnur ,  Chi Hong Ching

IPC: H01J37/34 ,  C23C16/34 ,  C23C16/40 ,  C23C14/34 ,  C23C14/54 ,  C23C14/35

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

公开(公告)号：US11495440B2

公开(公告)日：2022-11-08

申请号：US16996004

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Kumar ,  Prashanth Kothnur ,  Sidharth Bhatia ,  Anup Kumar Singh ,  Vivek Bharat Shah ,  Ganesh Balasubramanian ,  Changgong Wang

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.