公开(公告)号：US11462455B2

公开(公告)日：2022-10-04

申请号：US16262762

申请日：2019-01-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shiu-Fang Yen ,  Chang-Lin Yeh ,  Jen-Chieh Kao

IPC: H01L21/00 ,  H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/373 ,  H01L23/498 ,  H01L23/66 ,  H01L21/48 ,  H01L21/56 ,  H01Q1/38 ,  H01L25/065

Abstract: A semiconductor package device includes a substrate, an electronic component, and a thermal conductive layer. The electronic component is disposed on the substrate and includes a first surface facing away from the substrate. The thermal conductive layer is disposed above the first surface of the electronic component. The thermal conductive layer includes a plurality of portions spaced apart from each other.

公开(公告)号：US11224132B2

公开(公告)日：2022-01-11

申请号：US16563713

申请日：2019-09-06

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Yung I. Yeh ,  Chang-Lin Yeh ,  Sheng-Yu Chen

IPC: H05K3/28 ,  H05K5/00 ,  H05K5/06 ,  H05K1/18 ,  H05K9/00 ,  H05K1/14

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US10580713B2

公开(公告)日：2020-03-03

申请号：US15884313

申请日：2018-01-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yi Chen ,  Chang-Lin Yeh ,  Jen-Chieh Kao

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/66 ,  H01Q1/22 ,  H01L23/00 ,  H01Q19/10 ,  H01Q13/10

Abstract: A semiconductor package device includes a first substrate, a second substrate and a first spacer. The first substrate includes a first divided pad. The second substrate includes a second divided pad disposed above the first divided pad. The first spacer is disposed between the first divided pad and the second divided pad. The first spacer is in contact with the first divided pad and the second divided pad.

公开(公告)号：US11942385B2

公开(公告)日：2024-03-26

申请号：US17707803

申请日：2022-03-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Sheng-Yu Chen ,  Chang-Lin Yeh ,  Ming-Hung Chen

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L23/3135 ,  H01L21/565 ,  H01L23/291 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/5387 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0652 ,  H01L2224/16227 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/351

Abstract: A semiconductor package includes a substrate having a first side and a second side opposite to the first side, a first type semiconductor die disposed on the first side of the substrate, a first compound attached to the first side and encapsulating the first type semiconductor die, and a second compound attached to the second side, causing a stress with respect to the first type semiconductor die in the first compound. A method for manufacturing the semiconductor package described herein is also disclosed.

公开(公告)号：US11744024B2

公开(公告)日：2023-08-29

申请号：US17573595

申请日：2022-01-11

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Yung I Yeh ,  Chang-Lin Yeh ,  Sheng-Yu Chen

IPC: H01L23/00 ,  H05K5/00 ,  H05K5/06 ,  H05K1/18 ,  H05K9/00 ,  H05K3/28 ,  H05K1/14

CPC classification number: H05K5/0017 ,  H05K1/142 ,  H05K1/144 ,  H05K1/181 ,  H05K3/284 ,  H05K5/065 ,  H05K9/0022 ,  H05K2201/041 ,  H05K2201/10037 ,  H05K2201/10128 ,  H05K2201/10151 ,  H05K2203/1316 ,  H05K2203/1327

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US11626360B2

公开(公告)日：2023-04-11

申请号：US17486829

申请日：2021-09-27

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chang-Lin Yeh

IPC: H01L21/48 ,  H01L23/498 ,  H01L25/16

Abstract: A semiconductor device package includes a first substrate, a second substrate, a conductive structure, a first solder and a second solder. The second substrate is disposed over the first substrate. The conductive structure is disposed between the first substrate and the second substrate. The conductive structure includes a first wetting portion, a second wetting portion, and a non-wetting portion disposed between the first wetting portion and the second wetting portion. The first solder covers the first wetting portion and connects the conductive structure to the first substrate. The second solder covers the second wetting portion and connects the conductive structure to the second substrate. The first solder is spaced apart from the second solder by the non-wetting portion.

公开(公告)号：US11437415B2

公开(公告)日：2022-09-06

申请号：US16557990

申请日：2019-08-30

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Yung I. Yeh ,  Chang-Lin Yeh ,  Sheng-Yu Chen

IPC: H01L33/24 ,  H01L27/12 ,  H01L33/62 ,  H01L25/075 ,  H01L33/54

Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.

公开(公告)号：US11211302B2

公开(公告)日：2021-12-28

申请号：US16656338

申请日：2019-10-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chang-Lin Yeh

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H05K3/28

Abstract: A semiconductor device package comprises a carrier, a stop layer, a barrier layer and an encapsulant. The carrier has a first surface and a second surface recessed with respect to the first surface. The stop layer is disposed on the second surface of the carrier. The barrier layer is disposed on the stop layer and protruded from the first surface of the carrier. The encapsulant is disposed on the first surface of the carrier. Further, the encapsulant has a side surface disposed on the barrier layer.

公开(公告)号：US11133244B2

公开(公告)日：2021-09-28

申请号：US16446559

申请日：2019-06-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chang-Lin Yeh

IPC: H01L23/498 ,  H01L21/48 ,  H01L25/16

Abstract: A semiconductor device package includes a first substrate, a second substrate, a conductive structure, a first solder and a second solder. The second substrate is disposed over the first substrate. The conductive structure is disposed between the first substrate and the second substrate. The conductive structure includes a first wetting portion, a second wetting portion, and a non-wetting portion disposed between the first wetting portion and the second wetting portion. The first solder covers the first wetting portion and connects the conductive structure to the first substrate. The second solder covers the second wetting portion and connects the conductive structure to the second substrate. The first solder is spaced apart from the second solder by the non-wetting portion.

公开(公告)号：US11081473B2

公开(公告)日：2021-08-03

申请号：US16550111

申请日：2019-08-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Hung Chen ,  Sheng-Yu Chen ,  Chang-Lin Yeh ,  Yung-I Yeh

IPC: H01L25/16 ,  H01L23/00 ,  H01L33/56 ,  H01L23/48 ,  H01L23/528 ,  H01L27/12 ,  H01L33/62 ,  H01L23/522 ,  H01L21/285

Abstract: A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.