- Patent Title: Semiconductor device package and method of manufacturing the same
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Application No.: US16550111Application Date: 2019-08-23
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Publication No.: US11081473B2Publication Date: 2021-08-03
- Inventor: Ming-Hung Chen , Sheng-Yu Chen , Chang-Lin Yeh , Yung-I Yeh
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/00 ; H01L33/56 ; H01L23/48 ; H01L23/528 ; H01L27/12 ; H01L33/62 ; H01L23/522 ; H01L21/285

Abstract:
A semiconductor device package includes a first substrate, a dielectric layer, a thin film transistor (TFT) and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The dielectric layer is disposed on the first surface of the first substrate. The dielectric layer has a first surface facing away from the first substrate and a second surface opposite to the first surface. The TFT layer is disposed on the dielectric layer. The electronic component is disposed on the second surface of the first substrate. A roughness of the first surface of the dielectric layer is less than a roughness of the first surface of the first substrate.
Public/Granted literature
- US20210057398A1 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-02-25
Information query
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