Abstract:
A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
Abstract:
An ergonomic vertical redirection vision system comprises glasses or goggles with lenses modified to include a fresnel prism that vertically redirects light. The curved fresnel prism is a novel curved refractive element with unique advantages compared to a flat fresnel prism. The curved fresnel prism may be achromatized by the addition of an appropriate diffractive surface thereby creating a hybrid achromat or diffractive/refractive optical element (DROE). Looking through the modified eyewear will redirect the user's visual field up or down, depending on the configuration. Upward vision redirection improves ergonomics and aerodynamics for several sports including bicycle riding, swimming, downhill ski racing, and motorcycle racing. Downward vision redirection improves the ergonomics of reading a book, working on a laptop or pad computer, or taking notes in a class.
Abstract:
A zoned order sorting filter for a spectrometer in a semiconductor metrology system is disclosed with reduced light dispersion at the zone joints. The order sorting filter comprises optically-transparent layers deposited underneath, or on top of thin-film filter stacks of the order sorting filter zones, wherein the thicknesses of the optically-transparent layers are adjusted such that the total optical lengths traversed by light at a zone joint are substantially equal in zones adjacent the zone joint. A method for wavelength to detector array pixel location calibration of spectrometers is also disclosed, capable of accurately representing the highly localized nonlinearities of the calibration curve in the vicinity of zone joints of an order sorting filter.
Abstract:
A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a birefringent plate depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The plate depolarizer varies polarization with wavelength, and may be a Lyot depolarizer with two plates, or a depolarizer with more than two plates (such as a three-plate depolarizer). Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, the perturbation may be narrower than the wavelength resolution of the instrument.
Abstract:
A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
Abstract:
The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.
Abstract:
A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.
Abstract:
Provided is an apparatus for projecting multiple beams to a structure on a workpiece comprising a first light source generating a first illumination beam and a second light source generating a second illumination beam, an illumination primary mirror configured to reflect the first illumination beam onto the structure of the workpiece at a first angle of incidence, generating a first detection beam, and configured to reflect the second illumination beam onto the workpiece at a second angle of incidence, generating a second detection beam, a separate illumination secondary mirror positioned relative to the illumination primary mirror so as make the first angle of incidence substantially the same or close to a calculated optimum first angle of incidence and make the second angle of incidence substantially the same or close to a calculated optimum second angle of incidence. The first and second detection beams are diffracted off the structure at the corresponding angle of incidence to a detection primary mirror, reflected onto a separate secondary detection mirror and other optical components on the detection path, and onto spectroscopic detectors.
Abstract:
A zoned order sorting filter for a spectrometer in a semiconductor metrology system is disclosed with reduced light dispersion at the zone joints. The order sorting filter comprises optically-transparent layers deposited underneath, or on top of thin-film filter stacks of the order sorting filter zones, wherein the thicknesses of the optically-transparent layers are adjusted such that the total optical lengths traversed by light at a zone joint are substantially equal in zones adjacent the zone joint. A method for wavelength to detector array pixel location calibration of spectrometers is also disclosed, capable of accurately representing the highly localized nonlinearities of the calibration curve in the vicinity of zone joints of an order sorting filter.
Abstract:
Provided is an apparatus for auto focusing a workpiece for optical metrology measurements using an optical metrology system. The auto focusing subsystem includes a focus detector having a tilt angle, a capture range, and a plurality of sensors. A processor coupled to the focus detector is configured to utilize the plurality of focus signals measured using the focus detector to determine two or more focus parameters. The two or more focus parameters and calibration data are used to determine an initial position of the workpiece and to generate instructions to move the workpiece to a best focus position. A diffraction signal is measured off a structure on the workpiece using the optical metrology system to determine at least one profile parameter of the structure. The at least one profile parameter is used to modify at least one process variable or equipment setting of a semiconductor fabrication cluster.