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    Methods and systems for lithography process window simulation
    12.
    发明授权
    Methods and systems for lithography process window simulation 有权

    公开(公告)号：US09390206B2

    公开(公告)日：2016-07-12

    申请号：US14013593

    申请日：2013-08-29

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

    IPC: G06F17/50 ,  G03F7/20

    CPC classification number: G06F17/5009 ,  G03F7/705 ,  G03F7/70991

    Abstract: A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.

    Integration of lithography apparatus and mask optimization process with multiple patterning process
    13.
    发明授权
    Integration of lithography apparatus and mask optimization process with multiple patterning process 有权
    光刻设备和掩模优化工艺与多个图案化工艺的集成

    公开(公告)号：US09262579B2

    公开(公告)日：2016-02-16

    申请号：US14468635

    申请日：2014-08-26

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Hong Chen

    IPC: G06F17/50 ,  G03F1/70 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/707

    Abstract: The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. A method of splitting a pattern to be imaged onto a substrate via a lithographic process into a plurality of sub-patterns is disclosed, wherein the method comprises a splitting step being configured to be aware of requirements of a co-optimization between at least one of the sub-patterns and an optical setting of the lithography apparatus used for the lithographic process. Device characteristic optimization techniques, including intelligent pattern selection based on diffraction signature analysis, may be integrated into the multiple patterning process flow.

    Abstract translation: 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 公开了一种通过光刻处理将待成像的图案图案分割成多个子图案的方法，其中该方法包括分割步骤，其被配置为意识到在以下过程中的至少一个之间的共优化的要求： 用于光刻工艺的光刻设备的子图案和光学设置。 包括基于衍射特征分析的智能图案选择的设备特征优化技术可以被集成到多个图案化工艺流程中。

    Fast freeform source and mask co-optimization method
    14.
    发明授权
    Fast freeform source and mask co-optimization method 有权
    快速自由源和掩码协同优化方法

    公开(公告)号：US09111062B2

    公开(公告)日：2015-08-18

    申请号：US14075917

    申请日：2013-11-08

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Luoqi Chen ,  Jun Ye ,  Yu Cao

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/70083 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/705 ,  G06F17/5068

    Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

    Abstract translation: 本公开涉及光刻设备和工艺，更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面，本公开通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其它方面，本公开允许同时优化源和掩码，从而显着加速整体收敛。 根据另外的方面，本公开允许自由形式优化，而不需要常规优化技术所需的限制。

    Methods and systems for lithography calibration using a mathematical model for a lithographic process
    15.
    发明授权
    Methods and systems for lithography calibration using a mathematical model for a lithographic process 有权
    用于光刻过程的数学模型的光刻校准的方法和系统

    公开(公告)号：US09009647B2

    公开(公告)日：2015-04-14

    申请号：US13858795

    申请日：2013-04-08

    Applicant: ASML Netherlands B.V.

    Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G06F17/50 ,  G03F1/144 ,  G03F1/36 ,  G03F1/68 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70516

    Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.

    Abstract translation: 一种基于模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的有效的光学和抗蚀剂参数校准的方法。 该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 用于校准光刻过程的系统和方法，由此针对光学系统的标称配置计算多项式拟合，并且其可以用于估计其他配置的关键尺寸。

    Three-dimensional mask model for photolithography simulation
    16.
    发明授权
    Three-dimensional mask model for photolithography simulation 有权
    用于光刻模拟的三维掩模模型

    公开(公告)号：US08938694B2

    公开(公告)日：2015-01-20

    申请号：US14081386

    申请日：2013-11-15

    Applicant: ASML Netherlands B.V.

    Inventor： Peng Liu ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

    Abstract: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    Abstract translation: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

    Method of performing model-based scanner tuning
    18.
    发明授权
    Method of performing model-based scanner tuning 有权

    公开(公告)号：US11372337B2

    公开(公告)日：2022-06-28

    申请号：US17062251

    申请日：2020-10-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao

    IPC: G03F7/20

    Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

    Method of performing model-based scanner tuning
    19.
    发明授权
    Method of performing model-based scanner tuning 有权

    公开(公告)号：US10795266B2

    公开(公告)日：2020-10-06

    申请号：US15893305

    申请日：2018-02-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao

    IPC: G03F7/20

    Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

    Method and system for lithography process-window-maximizing optical proximity correction
    20.
    发明授权
    Method and system for lithography process-window-maximizing optical proximity correction 有权

    公开(公告)号：US10310371B2

    公开(公告)日：2019-06-04

    申请号：US15144242

    申请日：2016-05-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun Ye ,  Yu Cao ,  Hanying Feng

    IPC: G03F1/36 ,  G03F1/00 ,  G03F7/20 ,  G06F17/50

    Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

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