公开(公告)号：US20200319562A1

公开(公告)日：2020-10-08

申请号：US16903893

申请日：2020-06-17

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Seyed Iman MOSSAVAT ,  Paul Christiaan HINNEN

IPC: G03F7/20 ,  G02B21/10 ,  G01N21/27 ,  G02B21/36

Abstract: Disclosed is method of optimizing bandwidth of measurement illumination for a measurement application, and an associated metrology apparatus. The method comprises performing a reference measurement with reference measurement illumination having a reference bandwidth and performing one or more optimization measurements, each of said one or more optimization measurements being performed with measurement illumination having a varied candidate bandwidth. The one or more optimization measurements are compared with the reference measurement; and an optimal bandwidth for the measurement application is selected based on the comparison.

公开(公告)号：US20200284578A1

公开(公告)日：2020-09-10

申请号：US16882977

申请日：2020-05-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Alok VERMA ,  Hugo Augustinus Joseph CRAMER ,  Thomas THEEUWES ,  Anagnostis TSIATMAS ,  Bert VERSTRAETEN

IPC: G01B11/27 ,  G01N21/55 ,  G03F7/20 ,  G06F30/398

Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：US20170256465A1

公开(公告)日：2017-09-07

申请号：US15445465

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard McNAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: H01L21/66 ,  G01N21/88 ,  G01N21/95 ,  H01L21/308

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

公开(公告)号：US20170255738A1

公开(公告)日：2017-09-07

申请号：US15445536

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard McNAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: G06F17/50 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

公开(公告)号：US20240160151A1

公开(公告)日：2024-05-16

申请号：US18280459

申请日：2022-03-04

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N. V.

Inventor： Willem Marie Julia Marcel COENE ,  Vasco Tomas TENNER ,  Hugo Augustinus Joseph CRAMER ,  Arie Jeffrrey DEN BOEF ,  Wouter Dick KOEK ,  Sergei SOKOLOV ,  Jeroen Johan Maarten VAN DE WIJDEVEN ,  Alexander Kenneth RAUB

IPC: G03H1/04 ,  G01N21/95 ,  G02B21/10 ,  G02B21/36 ,  G03H1/00 ,  G03H1/02 ,  G03H1/08

CPC classification number: G03H1/0486 ,  G01N21/9501 ,  G02B21/10 ,  G02B21/365 ,  G03H1/0866 ,  G03H2001/0038 ,  G03H2001/0044 ,  G03H2001/005 ,  G03H2001/0232 ,  G03H2001/0445 ,  G03H2001/0473 ,  G03H2210/62

Abstract: A method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method includes obtaining a holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image, or a portion thereof, using the at least one attenuation function.

公开(公告)号：US20200232933A1

公开(公告)日：2020-07-23

申请号：US16642402

申请日：2018-08-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas Leo Maria HOOGENBOOM ,  Hugo Augustinus Joseph CRAMER

IPC: G01N21/93 ,  G01N21/956 ,  G03F7/20

Abstract: A method for manufacturing or adjusting a reticle having a predetermined functionality, the method including obtaining a reticle having a first pattern, the first pattern representing a first functionality of structures provided to a substrate using the reticle, and patterning the reticle having the first pattern with a second pattern using a pattern generating tool, the combined first and second patterns having the predetermined functionality.

公开(公告)号：US20190163075A1

公开(公告)日：2019-05-30

申请号：US16318999

申请日：2017-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: G03F7/20 ,  G01N21/956

Abstract: A method of reconstructing a characteristic of a structure formed on a substrate by a lithographic process, and an associated metrology apparatus. The method includes combining measured values of a first parameter associated with the lithographic process to obtain an estimated value of the first parameter; and reconstructing at least a second parameter associated with the characteristic of the structure using the estimated value of the first parameter and a measurement of the structure. The combining may involve modeling a variation of the first parameter to obtain a parameter model or fingerprint of the first parameter.

公开(公告)号：US20180173113A1

公开(公告)日：2018-06-21

申请号：US15842958

申请日：2017-12-15

Applicant: ASML Netherlands B.V.

Inventor： Jolanda Theodora Josephina SCHMETZ-SCHAGEN ,  Hugo Augustinus Joseph CRAMER ,  Armand Eugene Albert KOOLEN ,  Bastiaan Onne FAGGINGER AUER

IPC: G03F7/20 ,  G01B11/02 ,  G01M11/02

CPC classification number: G03F7/70641 ,  G01B11/028 ,  G01M11/0264 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7026

Abstract: A method for monitoring a characteristic of illumination from a metrology apparatus, the method comprising: using the metrology apparatus to acquire a pupil image at different focus settings of the metrology apparatus; and calculating an asymmetry value for each acquired pupil image; wherein each pupil image is acquired on at least one edge of a target of a substrate.

公开(公告)号：US20170010541A1

公开(公告)日：2017-01-12

申请号：US15114368

申请日：2015-01-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Seyed Iman MOSSAVAT ,  Hugo Augustinus Joseph CRAMER ,  Maurits VAN DER SCHAAR

IPC: G03F7/20 ,  G01B11/27

CPC classification number: G03F7/70591 ,  G01B11/272 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A method of determining edge placement error within a structure produced using a lithographic process, the method comprising the steps of: (a) receiving a substrate comprising a first structure produced using the lithographic process, the first structure comprising first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; (b) receiving a target signal indicative of a first target relative position which is indicative of a target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during said lithographic process; (c) detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and (d) ascertaining an edge placement error parameter on the basis of the first signal and the first target relative position.

Abstract translation: 一种确定在使用光刻工艺制造的结构内的边缘放置误差的方法，所述方法包括以下步骤：（a）接收包括使用所述光刻工艺制造的第一结构的衬底，所述第一结构包括第一层和第二层， 所述层具有导电材料的第一区域和非导电材料的第二区域; （b）接收指示第一目标相对位置的目标信号，该第一目标相对位置指示相对于第二层的第一区域和第二区域之间的边缘在第一区域和第一层的第二区域之间的边缘的目标位置 在所述平版印刷过程中的第一结构; （c）在用光辐射照射第一结构的同时检测散射辐射以获得第一信号; 和（d）基于第一信号和第一目标相对位置确定边缘放置误差参数。

公开(公告)号：US20160116849A1

公开(公告)日：2016-04-28

申请号：US14892176

申请日：2014-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

IPC: G03F7/20

CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。