公开(公告)号：US11774862B2

公开(公告)日：2023-10-03

申请号：US17501911

申请日：2021-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G03F7/00 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G01N21/956 ,  G03F9/7046 ,  H01L22/12 ,  H01L22/20

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US11175591B2

公开(公告)日：2021-11-16

申请号：US16098165

申请日：2017-04-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Hakki Ergün Cekli ,  Masashi Ishibashi ,  Wendy Johanna Martina Van De Ven ,  Willem Seine Christian Roelofs ,  Elliott Gerard McNamara ,  Rizvi Rahman ,  Michiel Kupers ,  Emil Peter Schmitt-Weaver ,  Erik Henri Adriaan Delvigne

IPC: G03F7/20 ,  G01N21/956 ,  G03F9/00 ,  H01L21/66

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

公开(公告)号：US10990018B2

公开(公告)日：2021-04-27

申请号：US16481143

申请日：2018-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G06F17/50 ,  G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US10684557B2

公开(公告)日：2020-06-16

申请号：US16085608

申请日：2017-04-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Rene Marinus Gerardus Johan Queens ,  Emil Peter Schmitt-Weaver

IPC: G06F3/00 ,  G03F7/20 ,  G03F9/00

Abstract: A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A functional relationship between local height deviations across a substrate and focus information, such as a determined focus amount, is determined for a substrate, e.g., a reference substrate. Height deviations are subsequently measured for another substrate, e.g. a production substrate. The height deviations for the subsequent substrate and the functional relationship are used to determine predicted focus information for the subsequent substrate. The predicted focus information is then used to control the lithographic apparatus to apply a product pattern to the product substrate.

公开(公告)号：US09507279B2

公开(公告)日：2016-11-29

申请号：US14069287

申请日：2013-10-31

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter Schmitt-Weaver ,  Paul Frank Luehrmann ,  Eduardus Johannes Gerardus Boon ,  Daan Maurits Slotboom ,  Jean-Philippe Xavier Van Damme ,  Wolfgang Henke ,  Alexander Ypma ,  Marc Jurian Kea

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70908 ,  G03F7/707 ,  G03F7/7085 ,  G03F7/70916 ,  G03F9/70

Abstract: A reticle is loaded into a lithographic apparatus. The apparatus performs measurements on the reticle, so as to calculate alignment parameters for transferring the pattern accurately to substrates. Tests are performed to detect possible contamination of the reticle or its support. Either operation proceeds with a warning, or the patterning of substrates is stopped. The test uses may use parameters of the alignment model itself, or different parameters. The integrity parameters may be compared against reference values reflecting historic measurements, so that sudden changes in a parameter are indicative of contamination. Integrity parameters may be calculated from residuals of the alignment model. In an example, height residuals are used to calculate parameters of residual wedge (Rx′) and residual roll (Ryy′). From these, integrity parameters expressed as height deviations are calculated and compared against thresholds.

Abstract translation: 将掩模版加载到光刻设备中。 该装置对掩模版进行测量，以便计算用于将图案精确地转印到基底上的对准参数。 执行测试以检测掩模版或其支撑体的可能污染。 任一操作都进行警告，或者停止基板的图案化。 测试使用可以使用对齐模型本身的参数或不同的参数。 可以将完整性参数与反映历史测量的参考值进行比较，使得参数中的突然变化指示污染。 可以从对齐模型的残差计算完整性参数。 在一个例子中，高度残差用于计算残余楔（Rx'）和残余辊（Ryy'）的参数。 从这些，计算表示为高度偏差的完整性参数，并将其与阈值进行比较。