SUBSTRATE CARRIER SYSTEM AND METHOD FOR USING THE SAME
    11.
    发明申请
    SUBSTRATE CARRIER SYSTEM AND METHOD FOR USING THE SAME 审中-公开
    基板载体系统及其使用方法

    公开(公告)号:US20170076968A1

    公开(公告)日:2017-03-16

    申请号:US15122736

    申请日:2015-03-20

    CPC classification number: H01L21/6833 H01L51/0011 H01L51/56

    Abstract: A substrate carrier system is provided. The substrate carrier system includes a substrate carrier body, an electrode assembly, a support base, and a controller. The substrate carrier body has a substrate supporting surface, and an electrode assembly is disposed in the substrate carrier body. The electrode assembly includes a plurality of laterally spaced apart electrode sets. Each electrode set includes a first electrode interleaved with a second electrode. The support base supports the substrate carrier body. The controller is configured to: select a first group of the electrode sets and a second group of the electrode sets from the plurality of the electrode sets; operate the first group of the electrode sets in a first chucking mode; simultaneously operate the second group of the electrode sets in a second chucking mode; and selectively switch at least one electrode set from the first group to the second group.

    Abstract translation: 提供了衬底载体系统。 基板载体系统包括基板载体主体,电极组件,支撑基座和控制器。 基板载体主体具有基板支撑表面,并且电极组件设置在基板载体主体中。 电极组件包括多个横向间隔开的电极组。 每个电极组包括与第二电极交错的第一电极。 支撑基座支撑基板载体主体。 控制器被配置为:从多个电极组中选择第一组电极组和第二组电极组; 在第一夹持模式中操作第一组电极组; 在第二夹持模式中同时操作第二组电极组; 并且选择性地将至少一个电极组从第一组切换到第二组。

    ROLL TO ROLL MASK-LESS LITHOGRAPHY WITH ACTIVE ALIGNMENT
    12.
    发明申请
    ROLL TO ROLL MASK-LESS LITHOGRAPHY WITH ACTIVE ALIGNMENT 审中-公开
    滚动以无主动对齐的方式滚动无障碍的LITHOGRAPHY

    公开(公告)号:US20160238951A1

    公开(公告)日:2016-08-18

    申请号:US15026763

    申请日:2014-09-24

    Inventor: John M. WHITE

    Abstract: Embodiments of the present invention relates to apparatus and methods for a maskless lithography on a flexible substrate with active alignment. In one embodiment, a lithography apparatus includes a cylindrical roller rotatable about a central axis and configured to transfer a flexible substrate on a cylindrical substrate supporting surface. A plurality of printing units, each includes an image sensing device and an imaging printing device, may be positioned facing the substrate supporting surface. The plurality of printing units may capture images of pre-existing patterns and/or markers on the flexible substrate as the flexible substrate is being tramsferred continiously and exposure patterns for each printing unit may be adjusted “on-the-fly” according to the captured image, thus achieving active alignment.

    Abstract translation: 本发明的实施例涉及在具有主动对准的柔性基板上进行无掩模光刻的装置和方法。 在一个实施例中,光刻设备包括可围绕中心轴线旋转并且被配置为将柔性基板传送到圆柱形基板支撑表面上的圆柱形滚柱。 每个包括图像感测装置和成像打印装置的打印单元可以被定位成面对基板支撑表面。 多个打印单元可以在柔性基板被连续地传送的情况下捕获柔性基板上的预先存在的图案和/或标记的图像,并且可以根据捕获的“即时”调整每个印刷单元的曝光图案 图像,从而实现主动对准。

    PERMANENT MAGNETIC CHUCK FOR OLED MASK CHUCKING
    13.
    发明申请
    PERMANENT MAGNETIC CHUCK FOR OLED MASK CHUCKING 有权
    用于OLED面罩切割的永久磁性卡盘

    公开(公告)号:US20150348812A1

    公开(公告)日:2015-12-03

    申请号:US14463825

    申请日:2014-08-20

    CPC classification number: H01F7/0252 G03F7/707 H01F7/0226

    Abstract: A permanent magnetic mask chuck is described herein. The permanent magnetic mask chuck includes a body with a plurality of permanent magnets positioned therein. The permanent magnets can then deliver a magnetic force to a mask to position and hold the mask over or on the substrate for further deposition.

    Abstract translation: 本文描述了永久磁性掩模卡盘。 永久磁性掩模卡盘包括其中定位有多个永磁体的主体。 永磁体然后可以将磁力传递到掩模,以将掩模定位并保持在衬底上或衬底上以进一步沉积。

    RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS
    14.
    发明申请
    RF CHOKE FOR GAS DELIVERY TO AN RF DRIVEN ELECTRODE IN A PLASMA PROCESSING APPARATUS 有权
    RF选择用于气体输送到等离子体处理装置中的RF驱动电极

    公开(公告)号:US20140216344A1

    公开(公告)日:2014-08-07

    申请号:US14249459

    申请日:2014-04-10

    Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

    Abstract translation: 在大面积等离子体处理系统中,工艺气体可以经由可被作为RF电极驱动的喷头组件引入腔室。 接地的气体供给管与喷头电气隔离。 气体供给管不仅可以提供处理气体,还可以提供从远程等离子体源清洁气体到处理室。 气体供给管的内部可以保持在低RF场或零RF场,以避免气体进料管内的过早气体击穿,这可能导致气体源和喷头之间的寄生等离子体形成。 通过馈送气体通过RF扼流圈,RF场和处理气体可以通过公共位置被引入处理室,从而简化室设计。

    SLIT VALVE DOOR WITH MOVING MATING PART
    15.
    发明申请
    SLIT VALVE DOOR WITH MOVING MATING PART 审中-公开
    滑动门与移动部分

    公开(公告)号:US20140023460A1

    公开(公告)日:2014-01-23

    申请号:US14035829

    申请日:2013-09-24

    CPC classification number: H01L21/67126 F16K51/02

    Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.

    Abstract translation: 本文公开的实施例通常涉及用于密封腔室中的开口的狭缝阀门组件。 当狭缝阀开口收缩时,被压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动,使得压紧在狭缝阀门和腔室之间的O形环可以与狭缝阀门一起移动,并且 房间。 因此,可能会发生O形环相对于室的摩擦较少。 随着摩擦的减少,可能产生更少的颗粒,并且可以延长O形环的寿命。 随着O形圈的寿命更长,衬底产量可能会增加。

    FULL-AREA COUNTER-FLOW HEAT EXCHANGE SUBSTRATE SUPPORT

    公开(公告)号:US20170321323A1

    公开(公告)日:2017-11-09

    申请号:US15149063

    申请日:2016-05-06

    Inventor: John M. WHITE

    Abstract: Embodiments described herein generally relate to a temperature control system in a substrate support assembly. In one embodiment, a substrate support assembly is disclosed. The substrate support assembly includes a support plate assembly The support plate assembly includes a first fluid supply manifold, a second fluid supply manifold, a first fluid return manifold, a second fluid return manifold, a plurality of first fluid passages, a plurality of second fluid passages, and a fluid supply conduit. The plurality of first fluid passages extend from the first fluid supply manifold to the first fluid return manifold. The plurality of second fluid passages extend from the second fluid supply manifold to the second fluid return manifold. The plurality of fluid passages extend across an upper surface of the support plate assembly in an alternating manner. The fluid supply conduit is configured to supply a fluid to the fluid supply manifolds.

    MULTILAYER PASSIVATION OR ETCH STOP TFT
    20.
    发明申请
    MULTILAYER PASSIVATION OR ETCH STOP TFT 有权
    多层钝化或蚀刻停止TFT

    公开(公告)号:US20160013320A1

    公开(公告)日:2016-01-14

    申请号:US14773209

    申请日:2014-03-04

    Abstract: The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.

    Abstract translation: 本发明一般涉及TFT和TFT的制造方法。 对于背沟道蚀刻TFT或蚀刻停止TFT,用于钝化层或蚀刻停止层的多个层允许在较不致密的背沟道保护层上形成非常密集的覆盖层。 封盖层可以是足够密实的,从而存在很少的针孔,因此氢不能通过半导体层。 因此,含氢前体可以用于覆盖层沉积。

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