公开(公告)号：US20160194758A1

公开(公告)日：2016-07-07

申请号：US14635589

申请日：2015-03-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. NEMANI ,  Erica CHEN ,  Ludovic GODET ,  Jun XUE ,  Ellie Y. YIEH

IPC: C23C16/56 ,  C23C16/32 ,  C23C14/48 ,  C23C16/36 ,  C23C16/40 ,  C23C16/30 ,  C23C16/34

CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/401

Abstract: Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

Abstract translation: 本文所述的实施方案涉及用于形成适用于高纵横比间隙填充应用的可流动化学气相沉积（FCVD）膜的方法。 所描述的各种工艺流程包括用于处理沉积的FCVD膜以改善电介质膜密度和材料组成的离子注入工艺。 离子注入工艺，固化过程和退火工艺可以以各种顺序组合使用，以在器件材料的热预算内的温度下形成具有改善的密度的电介质膜。 与常规的FCVD成膜方法相比，改进的膜质量特性包括膜应力减小和膜收缩减小。

公开(公告)号：US20230356540A1

公开(公告)日：2023-11-09

申请号：US18142305

申请日：2023-05-02

Applicant: Applied Materials, Inc.

Inventor： Yingdong LUO ,  Rami HOURANI ,  Xiaopei DENG ,  Kang LUO ,  Erica CHEN ,  Ludovic GODET

IPC: B41M5/00

CPC classification number: B41M5/0047

Abstract: Embodiments of the present disclosure relate to methods, systems, and apparatus for inkjet printing self-assembled monolayer (SAM) structures on substrates. In one embodiment, which can be combined with other embodiments, one or more SAM layers are printed on a substrate surface of a substrate in a localized manner such that a portion of the substrate surface is left exposed to a processing region of the inkjet chamber. The printing includes spraying one or more subsections of the substrate surface with an ink, the ink having a SAM composition. The SAM composition includes an active component, and a hydrophobic tail.

公开(公告)号：US20230341769A1

公开(公告)日：2023-10-26

申请号：US18333290

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Hao TANG ,  Kang LUO ,  Erica CHEN ,  Yongan XU

IPC: G03F7/00 ,  G02B5/18

CPC classification number: G03F7/0005 ,  G02B5/1857 ,  G03F7/0002

Abstract: A method of imprinting a pattern on a substrate is provided. The method includes forming a first pattern on a plurality of masters using a method other than imprinting, the first pattern including a plurality of patterned features of varying sizes; measuring the patterned features at a plurality of locations on each of the masters; selecting a first master of the plurality of masters based on the measurements of the patterned features on each of the masters; using the first master to form a second pattern on an imprint template; and imprinting the first pattern on a first device with the imprint template.

公开(公告)号：US20210217585A1

公开(公告)日：2021-07-15

申请号：US17079783

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei LIANG ,  Srinivas D. NEMANI ,  Chentsau Chris YING ,  Ellie Y. YIEH ,  Erica CHEN ,  Nithin Thomas ALEX

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/513

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：US20190393024A1

公开(公告)日：2019-12-26

申请号：US16401883

申请日：2019-05-02

Applicant: Applied Materials, Inc.

Inventor： Jong Mun KIM ,  Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Chentsau YING ,  Srinivas NEMANI ,  Ellie YIEH

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

公开(公告)号：US20190148144A1

公开(公告)日：2019-05-16

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao LIU ,  Cheng PAN ,  Erica CHEN ,  Srinivas D. NEMANI ,  Chang KE ,  Lei ZHOU

IPC: H01L21/02 ,  H01L23/31 ,  B05D1/18

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US20170117157A1

公开(公告)日：2017-04-27

申请号：US15290005

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Erica CHEN ,  Ludovic GODET ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/306 ,  H01L21/265 ,  H01L21/324 ,  H01L21/762

CPC classification number: H01L21/76825 ,  H01L21/265 ,  H01L21/30625 ,  H01L21/31051 ,  H01L21/31155 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76224 ,  H01L21/76828

Abstract: Implementations described herein relate to methods for forming gap fill materials. After the gap fill material is deposited and before a CMP process is performed on the gap fill material, one or more ion implantation processes are utilized to treat the deposited gap fill material. The one or more ion implantation processes include implanting a first ion species in the gap fill material using a first ion energy, and then implanting a second ion species in the gap fill material using a second ion energy that's lower than the first ion energy. The one or more ion implantation processes minimize CMP dishing and improve recess profile.