公开(公告)号：US20140254022A1

公开(公告)日：2014-09-11

申请号：US14137592

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Jiping LI ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Douglas E. HOLMGREN ,  Samuel C. HOWELLS ,  Theodore P. MOFFITT ,  Stephen MOFFATT

IPC: G02B3/00

CPC classification number: G02B3/0037 ,  G02B27/48

Abstract: Embodiments described herein relate to thermal processing of semiconductor substrates. More specifically, embodiments described herein relate to laser thermal processing of semiconductor substrates. In certain embodiments, a uniformizer is provided to spatially and temporally decorrelate a coherent light image.

Abstract translation: 本文所述的实施例涉及半导体衬底的热处理。 更具体地，本文所述的实施例涉及半导体衬底的激光热处理。 在某些实施例中，提供均匀器来空间和时间地去相关联相干光图像。

公开(公告)号：US20240385048A1

公开(公告)日：2024-11-21

申请号：US18789641

申请日：2024-07-30

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

公开(公告)号：US20170330776A1

公开(公告)日：2017-11-16

申请号：US15668647

申请日：2017-08-03

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Bruce E. ADAMS

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to pyrometry during thermal processing of semiconductor substrates. More specifically, embodiments of the invention relate to a pyrometry filter for a thermal process chamber. In certain embodiments, the pyrometry filter selectively filters selected wavelengths of energy to improve a pyrometer measurement. The pyrometry filter may have various geometries which may affect the functionality of the pyrometry filter.

公开(公告)号：US20160020117A1

公开(公告)日：2016-01-21

申请号：US14805232

申请日：2015-07-21

Applicant: Applied Materials, Inc.

Inventor： Aaron Muir HUNTER ,  Amikam SADE ,  Samuel C. HOWELLS ,  Douglas E. HOLMGREN ,  Bruce E. ADAMS ,  Theodore P. MOFFITT ,  Stephen MOFFATT

IPC: H01L21/324 ,  H01L21/67 ,  B23K26/70 ,  B23K26/073 ,  B23K26/08 ,  B23K26/00 ,  H01L21/268 ,  B23K26/0622

CPC classification number: B23K26/70 ,  B23K26/0732 ,  B23K26/082 ,  B23K26/352 ,  H01L21/268 ,  H01L21/67115

Abstract: Apparatus, system, and method for thermally treating a substrate. A source of pulsed electromagnetic energy can produce pulses at a rate of at least 100 Hz. A movable substrate support can move a substrate relative to the pulses of electromagnetic energy. An optical system can be disposed between the energy source and the movable substrate support, and can include components to shape the pulses of electromagnetic energy toward a rectangular profile. A controller can command the source of electromagnetic energy to produce pulses of energy at a selected pulse rate. The controller can also command the movable substrate support to scan in a direction parallel to a selected edge of the rectangular profile at a selected speed such that every point along a line parallel to the selected edge receives a predetermined number of pulses of electromagnetic energy.

Abstract translation: 用于热处理基底的装置，系统和方法。 脉冲电磁能源可以以至少100Hz的速率产生脉冲。 可移动衬底支撑件可以相对于电磁能的脉冲移动衬底。 光学系统可以设置在能量源和可移动衬底支撑件之间，并且可以包括将电磁能的脉冲朝向矩形轮廓成形的部件。 控制器可以命令电磁能量源以选定的脉冲速率产生能量脉冲。 控制器还可以以可选择的速度命令可移动衬底支撑件沿平行于所述矩形轮廓的选定边缘的方向进行扫描，使得沿着与所选边缘平行的线的每个点接收预定数量的电磁能量脉冲。

公开(公告)号：US20150124329A1

公开(公告)日：2015-05-07

申请号：US14594890

申请日：2015-01-12

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT ,  Douglas E. HOLMGREN ,  Samuel C. HOWELLS ,  Edric TONG ,  Bruce E. ADAMS ,  Jiping LI ,  Aaron Muir HUNTER

IPC: G02B27/10 ,  G02B27/14 ,  G02B27/12

CPC classification number: G02B27/106 ,  G02B17/0888 ,  G02B27/0025 ,  G02B27/10 ,  G02B27/1006 ,  G02B27/12 ,  G02B27/123 ,  G02B27/126 ,  G02B27/14 ,  G02B27/143 ,  G02B27/30

Abstract: Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.

Abstract translation: 公开了用于组合放大辐射束的装置和方法。 光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。 在一些实施例中，相应的入射角也可以不同。 准直光学元件具有使光束准直的光学特性。 光学性质可以是折射或反射的，或其组合。 还可以提供收集光学器件以将多个光束引导到准直光学元件。 光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

公开(公告)号：US20140138362A1

公开(公告)日：2014-05-22

申请号：US14163309

申请日：2014-01-24

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT ,  Douglas E. HOLMGREN ,  Samuel C. HOWELLS ,  Edric TONG ,  Bruce E. ADAMS ,  Jiping LI ,  Aaron Muir HUNTER

IPC: H01L21/477 ,  B23K26/04 ,  B23K26/00

CPC classification number: H01L21/477 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/127 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  F27B5/14 ,  H01L21/268 ,  H01S3/0057

Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.

Abstract translation: 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。

公开(公告)号：US20180099353A1

公开(公告)日：2018-04-12

申请号：US15838010

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC: B23K26/06 ,  H01L21/324 ,  H01L21/268 ,  B23K26/073 ,  B23K26/00 ,  H01L21/20

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20170040194A1

公开(公告)日：2017-02-09

申请号：US15207226

申请日：2016-07-11

Applicant: Applied Materials, Inc.

Inventor： Jiping LI ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Kim VELLORE ,  Samuel C. HOWELLS ,  Stephen MOFFATT

IPC: H01L21/67 ,  B23K26/0622 ,  B23K26/00 ,  B23K26/03 ,  H01L21/268 ,  H01L21/324

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

Abstract translation: 本文所述的实施例涉及热处理的装置和方法。 更具体地，本文所述的装置和方法涉及通过增加基板表面上的图像中的能量分布的均匀性来对半导体基板进行激光热处理。

公开(公告)号：US20150053658A1

公开(公告)日：2015-02-26

申请号：US14480415

申请日：2014-09-08

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Dean JENNINGS ,  Jiping LI ,  Timothy N. THOMAS ,  Stephen MOFFATT

IPC: B23K26/06 ,  G02B27/09 ,  B23K26/073

CPC classification number: B23K26/073 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/0732 ,  B23K2103/56 ,  G02B27/0961

Abstract: The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. Typically, the anneal regions may be square or rectangular in shape. Generally, the optical system and methods of the present invention are used to preferentially anneal one or more regions found within the anneal regions by delivering enough energy to cause the one or more regions to re-melt and solidify.

Abstract translation: 本发明一般涉及一种光学系统，其能够在包含在基板的表面上的退火区域上可靠地传递均匀的能量。 光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。 通常，退火区域可以是正方形或矩形形状。 通常，本发明的光学系统和方法用于通过递送足够的能量以使一个或多个区域再熔化和固化来优先退火在退火区域内发现的一个或多个区域。

公开(公告)号：US20140256161A1

公开(公告)日：2014-09-11

申请号：US14159228

申请日：2014-01-20

Applicant: Applied Materials, Inc.

Inventor： Jiping LI ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Kim VELLORE ,  Samuel C. HOWELLS ,  Stephen MOFFATT

IPC: H01L21/268 ,  B23K26/00 ,  H01L21/263

CPC classification number: H01L21/67115 ,  B23K26/009 ,  B23K26/034 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324

Abstract: Embodiments described herein relate to apparatus and methods of thermal processing. More specifically, apparatus and methods described herein relate to laser thermal treatment of semiconductor substrates by increasing the uniformity of energy distribution in an image at a surface of a substrate.

Abstract translation: 本文所述的实施例涉及热处理的装置和方法。 更具体地，本文所述的装置和方法涉及通过增加基板表面上的图像中的能量分布的均匀性来对半导体基板进行激光热处理。