公开(公告)号：US10927451B2

公开(公告)日：2021-02-23

申请号：US16541688

申请日：2019-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Byeong Chan Lee ,  Huixiong Dai ,  Tejinder Singh ,  Joung Joo Lee ,  Xianmin Tang

IPC: C23C14/54 ,  C23C14/58 ,  C23C14/34 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.

公开(公告)号：US10927450B2

公开(公告)日：2021-02-23

申请号：US16225443

申请日：2018-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Wenhui Wang ,  Huixiong Dai ,  Christopher Ngai ,  Joung Joo Lee ,  Xianmin Tang

IPC: C23C14/54 ,  H01L21/3213 ,  C23C14/34 ,  C23C14/50

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

公开(公告)号：US10438849B2

公开(公告)日：2019-10-08

申请号：US15137245

申请日：2016-04-25

Applicant: APPLIED MATERIALS, INC.

Inventor： He Ren ,  Jie Zhou ,  Guannan Chen ,  Michael W. Stowell ,  Bencherki Mebarki ,  Mehul Naik ,  Srinivas D. Nemani ,  Nikolaos Bekiaris ,  Zhiyuan Wu

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: An integrated circuit is fabricated by chemical vapor deposition or atomic layer deposition of a metal film to metal film.

公开(公告)号：US20160222505A1

公开(公告)日：2016-08-04

申请号：US14919196

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  David Thompson

IPC: C23C16/08 ,  C23C16/56

CPC classification number: C23C16/56 ,  C23C16/18 ,  C23C16/42

Abstract: Methods for depositing or forming a metal silicide layer are disclosed. A metal halide layer is deposited, cleaned by a halogen and subjected to a siliciding agent to form the metal silicide.

Abstract translation: 公开了沉积或形成金属硅化物层的方法。 金属卤化物层被沉积，用卤素清洗并进行硅化剂以形成金属硅化物。

公开(公告)号：US20240331999A1

公开(公告)日：2024-10-03

申请号：US18442681

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Ying-Bing Jiang ,  Avgerinos V. Gelatos ,  Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  In Seok Hwang ,  Zhijun Chen

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/31111

Abstract: Exemplary semiconductor processing methods may include providing a substrate to a processing region of a semiconductor processing chamber. The substrate may include an alternating stack of materials. A feature may extend through the alternating stack of materials. One material of the alternating stack of materials may include a silicon-containing material. A native oxide material may be disposed on at least a portion of exposed surfaces of the silicon-containing material. The methods may include performing a pre-clean treatment on the substrate. The methods may include providing a fluorine-containing precursor to the processing region. The methods may include contacting the substrate with the fluorine-containing precursor, wherein the contacting removes native oxide from the silicon-containing material.

公开(公告)号：US11851740B2

公开(公告)日：2023-12-26

申请号：US16716691

申请日：2019-12-17

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Bencherki Mebarki ,  Jinxin Fu

IPC: C23C14/04 ,  G02B27/10 ,  G02B27/01 ,  G02B6/132 ,  C23C14/22 ,  C23C14/34

CPC classification number: C23C14/046 ,  C23C14/042 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/3464 ,  G02B6/132 ,  G02B27/0172 ,  G02B27/1073 ,  G02B2027/0178

Abstract: Embodiments described herein relate to encapsulated nanostructured optical devices and methods of encapsulating gratings of such devices by asymmetric selective physical vapor deposition (PVD). In some embodiments, a method for encapsulating optical device gratings includes a first PVD process and a second PVD process that may be carried out simultaneously or sequentially. The first PVD process may provide a first stream of material at a first angle non-perpendicular to a substrate of the grating. The second PVD process may provide a second stream of material at a second angle non-perpendicular to the substrate of the grating. The combination of the first PVD process and the second PVD process forms an encapsulation layer over the grating and one or more air gaps between adjacent fins of the grating.

公开(公告)号：US20230017035A1

公开(公告)日：2023-01-19

申请号：US17844181

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Thai Cheng Chua ,  Christian W. Valencia ,  Joung Joo Lee ,  Xianmin Tang ,  Xiao Chen

IPC: C23C16/27 ,  C23C16/56 ,  C23C16/511 ,  C23C16/52

Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.

公开(公告)号：US20220254641A1

公开(公告)日：2022-08-11

申请号：US17174224

申请日：2021-02-11

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Valencia ,  Chikuang Wang ,  Bencherki Mebarki ,  Hanh Nguyen ,  Philip Allan Kraus

IPC: H01L21/285 ,  H01L23/532 ,  H01J37/32 ,  C23C16/26 ,  C23C16/02 ,  C23C16/511

Abstract: Embodiments disclosed herein include methods and apparatuses used to deposit graphene layers. In an embodiment, a method of depositing a graphene layer on a substrate comprises providing a substrate within a modular microwave plasma chamber, and flowing a carbon source and a hydrogen source into the modular microwave plasma chamber. In an embodiment, the method further comprises striking a plasma in the modular microwave plasma chamber, where a substrate temperature is below approximately 400° C., and depositing the graphene layer on the substrate.

公开(公告)号：US20220231137A1

公开(公告)日：2022-07-21

申请号：US17152190

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Wenting Hou ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Jianxin Lei ,  Liqi Wu ,  Raymond Hoiman Hung ,  Tae Hong Ha ,  Xianmin Tang

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/8234

Abstract: A contact stack of a semiconductor device comprises: a source/drain region; a metal silicide layer above the source/drain region; a metal cap layer directly on the metal silicide layer; and a conductor on the metal cap layer. A method comprises: depositing a metal silicide layer in a feature of a substrate; in the absence of an air break after the depositing of the metal silicide layer, preparing a metal cap layer directly on the metal silicide layer; and depositing a conductor on the metal cap layer.

公开(公告)号：US20190311905A1

公开(公告)日：2019-10-10

申请号：US16375941

申请日：2019-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Xianmin Tang

IPC: H01L21/285 ,  H01L21/67

Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.