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公开(公告)号：US20200048550A1
公开(公告)日：2020-02-13
申请号：US16538134
申请日：2019-08-12
Inventor： Chang-Koo KIM , Jun-Hyun KIM , Jin-Su PARK
IPC: C09K13/00 , H01L21/311 , H01L21/67
Abstract: Provided is a plasma etching method comprising supplying heptafluoropropyl methyl ether (HFE) gas, argon (Ar) gas and oxygen (O2) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
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公开(公告)号：US20200035502A1
公开(公告)日：2020-01-30
申请号：US16521701
申请日：2019-07-25
Inventor： Chang-Koo KIM , Jun-Hyun KIM , Jin-Su PARK
IPC: H01L21/311 , C09K13/08
Abstract: Provided is a plasma etching method comprising supplying both hexafluoroisopropanol (HFIP) gas and argon (Ar) gas to a plasma chamber receiving an etching target therein, thereby to plasma-etch the etching target.
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公开(公告)号：US20180254612A1
公开(公告)日：2018-09-06
申请号：US15755417
申请日：2016-08-10
Inventor： Chang-Koo KIM , Hae-Min LEE , Doo Won KANG , Hyun Chang KIM
CPC classification number: H01T4/12 , C23C18/1651 , C23C18/1692 , C23C18/1893 , C23C18/36 , C23C18/50 , H01T4/02 , H01T21/00
Abstract: The present disclosure provides a method for manufacturing a surge absorbing device, the method comprising: providing an elongate ceramic tube having a hollow space defined therein and having open and opposite first and second end; forming a first plating layer and a second plating layer on the first end and the second end, respectively; placing a surge absorbing element within the hollow space within the ceramic tube; disposing first and second brazing rings on the first plating layer and the second plating layer, respectively; disposing first and second sealing electrodes on the first and second brazing rings respectively; and melting the first and second brazing rings in an inert gas atmosphere to attach the first and second sealing electrodes onto the first plating layer and the second plating layer, respectively.
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