公开(公告)号：US10351584B2

公开(公告)日：2019-07-16

申请号：US15303845

申请日：2015-03-30

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07C251/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C23C16/455

Abstract: An alkoxide compound is represented by General Formula (I) below: wherein R1 to R3 each independently represent hydrogen, a C1-12 hydrocarbon group, etc.; R4 represents a C1-12 hydrocarbon group, etc.; L represents hydrogen, halogen, a hydroxyl group, an amino group, an azi group, a phosphido group, a nitrile group, a carbonyl group, a C1-12 hydrocarbon group, etc.; and M represents a metal atom or a silicon atom, n represents an integer of 1 or more, m represents an integer of 0 or more, and n+m represents the valence of the metal atom or silicon atom.

公开(公告)号：US10167304B2

公开(公告)日：2019-01-01

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako Hatase ,  Masaki Enzu ,  Atsushi Sakurai ,  Tomoharu Yoshino

IPC: C07F15/00 ,  C07C225/14 ,  C23C16/16 ,  C23C16/455

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

公开(公告)号：US10155784B2

公开(公告)日：2018-12-18

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07C251/08 ,  C07F15/06 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

Abstract: An alcohol compound of formula (II) in which R4 represents a methyl group or an ethyl group, R5 represents a hydrogen atom, and R6 represents a C1-3 linear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.

公开(公告)号：US09896468B2

公开(公告)日：2018-02-20

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C23C16/00 ,  C07F15/06 ,  C07C251/08 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：US20150266904A1

公开(公告)日：2015-09-24

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/44 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract translation: 公开了通式（I）的铝化合物和含有铝化合物的薄膜形成材料。 在式（I）中，R 1和R 2各自表示直链或支链C 2 -C 5烷基，R 3表示甲基或乙基。 R1和R2各自优选为乙基。 该化合物具有低的熔融温度，足够的挥发性和高的热稳定性，因此适合用作通过CVD形成薄膜的材料。

公开(公告)号：US12275748B2

公开(公告)日：2025-04-15

申请号：US17917671

申请日：2021-03-31

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Yoshiki Ooe ,  Keisuke Takeda ,  Ryota Fukushima ,  Chiaki Mitsui ,  Atsushi Yamashita

IPC: C07F15/06 ,  C01B33/027 ,  C07F5/00 ,  C07F7/02 ,  C07F7/22 ,  C07F13/00 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455

Abstract: The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where R1 and R2 each independently represent an alkyl group having 1 to 5 carbon atoms, R3 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and “n” represents the valence of the atom represented by M, provided that at least one hydrogen atom of R1 to R3 is substituted with a fluorine atom.

公开(公告)号：US10364495B2

公开(公告)日：2019-07-30

申请号：US15483110

申请日：2017-04-10

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C23C16/44 ,  C23C16/455 ,  C07F5/06 ,  C23C16/40 ,  C23C16/06

Abstract: The present invention relates to an aluminum compound represented by general formula (I). The present invention also relates to a thin film-forming raw material that contains this aluminum compound. In general formula (I), R1 and R2 each independently denote a straight chain or branched alkyl group having 2-5 carbon atoms, and R3 denotes a methyl group or ethyl group. It is preferable for R1 and R2 to be ethyl groups. This compound has a low melting point, exhibits satisfactory volatility, has high thermal stability, and is suitable for use as a raw material used to form a thin film by a CVD method.

公开(公告)号：US10011623B2

公开(公告)日：2018-07-03

申请号：US15318755

申请日：2015-07-16

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Tomoharu Yoshino ,  Masaki Enzu

IPC: C07F15/06 ,  C07F15/04 ,  C07C251/08 ,  C07F7/08 ,  C07C251/76 ,  C07F7/10 ,  C23C16/18

CPC classification number: C07F15/065 ,  C07C251/08 ,  C07C251/76 ,  C07F7/081 ,  C07F7/10 ,  C07F15/04 ,  C07F15/045 ,  C07F15/06 ,  C23C16/18 ,  C23C16/45525

Abstract: The alkoxide compound of the present invention is characteristically represented by the following general formula (I):

公开(公告)号：US09994593B2

公开(公告)日：2018-06-12

申请号：US15306812

申请日：2015-04-08

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Masaki Enzu ,  Atsushi Sakurai ,  Akihiro Nishida ,  Makoto Okabe

IPC: C07F1/08 ,  C07C215/08 ,  C23C16/18 ,  H01L21/28 ,  H01L21/285 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/455

CPC classification number: C07F1/08 ,  C07C215/08 ,  C09D1/00 ,  C09D5/24 ,  C23C16/06 ,  C23C16/18 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/28 ,  H01L21/285

Abstract: This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

公开(公告)号：US20140174323A1

公开(公告)日：2014-06-26

申请号：US14115495

申请日：2012-05-15

Applicant: ADEKA CORPORATION

Inventor： Senji Wada ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07F15/04

CPC classification number: C07F15/045 ,  C07C215/08 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45553

Abstract: An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

Abstract translation: 由下式（I）表示的醇盐化合物和含有所述醇盐化合物的薄膜形成用原料。 式中，R1表示碳原子数2〜4的直链或支链烷基，R2和R3各自表示碳原子数为1〜4的直链或支链烷基。 式（I）中，R 1优选为乙基。 还优选R2和R3中的一个或两个为乙基。 作为用于化学气相沉积的原料，优选使用包含通式（I）表示的醇盐化合物的薄膜形成用原料。