公开(公告)号：US5698897A

公开(公告)日：1997-12-16

申请号：US591977

申请日：1996-01-29

Applicant: Yasunobu Nashimoto ,  Hiroaki Tsutsui

Inventor： Yasunobu Nashimoto ,  Hiroaki Tsutsui

IPC: H01L29/812 ,  H01L21/338 ,  H01L23/373 ,  H01L23/482 ,  H01L23/34 ,  H01L23/06 ,  H05K7/20

CPC classification number: H01L23/3735 ,  H01L23/4827 ,  H01L24/29 ,  H01L24/31 ,  H01L2224/04026 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/15747 ,  H01L2924/3511

Abstract: A semiconductor device having a plated heat sink structure is provided, in which an Au layer (5) high in thermal expansion coefficient is formed on the lower surface of a GaAs substrate (1) having a source electrode (2), a gate electrode (3) and a drain electrode (4) of a field effect transistor on the upper surface, and, a W layer (6) low in thermal expansion coefficient is formed on the lower surface of the Au layer (5). Warping of the device after mounted on a package is reduced on the ground of such a plated heat sink structure.

Abstract translation: 提供一种具有电镀散热器结构的半导体器件，其中在具有源电极（2），栅电极（2）的GaAs衬底（1）的下表面上形成热膨胀系数高的Au层（5） 3）和上表面的场效应晶体管的漏电极（4），并且在Au层（5）的下表面上形成热膨胀系数低的W层（6）。 在这种电镀散热器结构的基础上，装置的安装在包装上的翘曲减小了。

公开(公告)号：US5206528A

公开(公告)日：1993-04-27

申请号：US801796

申请日：1991-12-02

Applicant: Yasunobu Nashimoto

Inventor： Yasunobu Nashimoto

IPC: H01L29/20 ,  H01L21/203 ,  H01L21/338 ,  H01L29/43 ,  H01L29/78 ,  H01L29/80 ,  H01L29/812

CPC classification number: H01L29/802 ,  H01L29/432

Abstract: A field effect transistor comprises a current channel layer formed on an InP substrate through a buffer layer and formed of InGaAs having a lattice constant in match with that of InP, and a source electrode and a drain electrode formed on the current channel layer separately from each other and in ohmic contact with the current channel layer. An insulator layer is formed on the current channel layer between the source electrode and the drain electrode, and a gate electrode is formed on the insulator layer. The insulator layer being composed of a superlattice layer formed of alternately stacked undoped InAs thin films and undoped AlAs thin films. A ratio t.sub.1 /t.sub.2 of the thickness t.sub.1 of each one InAs thin film and the thickness t.sub.2 of one AlAs thin film adjacent to the each one InAs thin film is gradually reduced toward to an upper surface of the superlattice layer.

Abstract translation: 场效应晶体管包括通过缓冲层形成在InP衬底上的电流沟道层，并且由具有与InP的晶格常数匹配的晶格常数的InGaAs形成的电流沟道层，以及分别形成在电流沟道层上的源电极和漏电极 另外和欧姆接触当前通道层。 在源电极和漏极之间的电流沟道层上形成绝缘体层，并且在绝缘体层上形成栅电极。 绝缘体层由交替层叠的未掺杂的InAs薄膜和未掺杂的AlAs薄膜形成的超晶格层构成。 每个InAs薄膜的厚度t1的比率t1 / t2和与每个InAs薄膜相邻的一个AlAs薄膜的厚度t2朝向超晶格层的上表面逐渐减小。