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27 条记录 (耗时 0.019 秒)

    IMPURITY DETECTION IN COMBUSTOR SYSTEMS
    11.
    发明申请
    IMPURITY DETECTION IN COMBUSTOR SYSTEMS 有权
    COMBUSTOR系统中的检测

    公开(公告)号：US20110138813A1

    公开(公告)日：2011-06-16

    申请号：US12635742

    申请日：2009-12-11

    申请人： Peter Micah Sandvik ,  Richard Dale Slates ,  Alexey Vasily Vert ,  Samer Aljabari

    发明人： Peter Micah Sandvik ,  Richard Dale Slates ,  Alexey Vasily Vert ,  Samer Aljabari

    IPC分类号： F02C7/22 ,  F01N11/00 ,  G01N7/00

    CPC分类号： G01N21/72 ,  F23N5/082

    摘要： The present invention discloses a combustor system and method of measuring impurities in the combustion system. The combustion system includes an up-stream fuel injection point; a down-stream turbine combustor; a flame zone in the turbine combustor comprising a plurality of axial sub-zones; an optical port assembly configured to obtain a non-axial, direct, optical view of at least one of the plurality of axial sub-zones, and an impurity detection system in optical communication with the optical port assembly.

    摘要翻译： 本发明公开了一种在燃烧系统中测量杂质的燃烧器系统和方法。 燃烧系统包括上游燃料喷射点; 下游涡轮机燃烧器; 涡轮机燃烧器中的火焰区域包括多个轴向子区域; 光学端口组件，被配置为获得所述多个轴向子区域中的至少一个的非轴向，直接光学视图，以及与所述光学端口组件光学连通的杂质检测系统。

    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD
    15.
    发明申请
    HETEROSTRUCTURE DEVICE AND ASSOCIATED METHOD 有权
    异体结构设备及相关方法

    公开(公告)号：US20090159929A1

    公开(公告)日：2009-06-25

    申请号：US11961532

    申请日：2007-12-20

    申请人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

    发明人： Vinayak Tilak ,  Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Siddharth Rajan

    IPC分类号： H01L29/78 ,  H01L21/335

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

    摘要： A heterostructure device includes a semiconductor multi-layer structure that has a first region, a second region and a third region. The first region is coupled to a source electrode and the second region is coupled to a drain electrode. The third region is disposed between the first region and the second region. The third region provides a switchable electrically conductive pathway from the source electrode to the drain electrode. The third region includes iodine ions. A system includes a heterostructure field effect transistor that includes the device.

    摘要翻译： 异质结构器件包括具有第一区域，第二区域和第三区域的半导体多层结构。 第一区域耦合到源电极，第二区域耦合到漏电极。 第三区域设置在第一区域和第二区域之间。 第三区域提供从源电极到漏电极的可切换导电路径。 第三区域包括碘离子。 一种系统包括包括该器件的异质结构场效应晶体管。

    Semiconductor devices and systems
    17.
    发明授权
    Semiconductor devices and systems 有权
    半导体器件和系统

    公开(公告)号：US08198650B2

    公开(公告)日：2012-06-12

    申请号：US12329841

    申请日：2008-12-08

    申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    IPC分类号： H01L29/66

    CPC分类号： H01L29/861 ,  H01L29/402

    摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

    摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。

    SEMICONDUCTOR DEVICES AND SYSTEMS
    18.
    发明申请
    SEMICONDUCTOR DEVICES AND SYSTEMS 有权
    半导体器件和系统

    公开(公告)号：US20100140730A1

    公开(公告)日：2010-06-10

    申请号：US12329841

    申请日：2008-12-08

    申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L29/06

    CPC分类号： H01L29/861 ,  H01L29/402

    摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

    摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。