公开(公告)号：US06703649B2

公开(公告)日：2004-03-09

申请号：US10147047

申请日：2002-05-17

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L310328

CPC分类号： H01L29/812 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7371 ,  H01L29/7787

摘要： A semiconductor element includes a conductive SiC base having a resistivity of less than 1×105 &OHgr;cm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer group made including at least one of Al element, Ga element and In element.

摘要翻译： 半导体元件包括电阻率小于1×10 5Ω·mol·m的导电SiC基底，由形成在SiC基底上的至少包含Al元素的半导体氮化物制成的底层和至少包含至少包含Al元素的半导体氮化物层组 Al元素，Ga元素和In元素之一。

公开(公告)号：US06649288B2

公开(公告)日：2003-11-18

申请号：US09981295

申请日：2001-10-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： B32B904

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  Y10T428/265

摘要： A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant “c” of the c-axis of the Group III nitride film and the lattice constant “a” of the crystal face perpendicular to the main surface of the substrate satisfies the relation of “C>2.636a-3.232”.

摘要翻译： III族氮化物膜沿着衬底的C轴直接生长在晶体衬底上，并且至少包括Al。 III族氮化物膜具有六方晶系，III族氮化物膜的c轴的晶格常数“c”和垂直于衬底的主表面的晶面的晶格常数“a”满足 “C> 2.636a-3.232”的关系。

公开(公告)号：US06605895B2

公开(公告)日：2003-08-12

申请号：US10097277

申请日：2002-03-15

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01J6304

CPC分类号： H01J63/04 ,  H01J63/06 ,  H01L33/32 ,  H01L33/502

摘要： A light-emitting element includes a light-emitting layer including a base layer made of a first nitride semiconductor and plural island-shaped crystal portions made of a second nitride semiconductor, and an irradiation source of electron beam which is disposed so as to be opposite to the light-emitting layer. Then, electron-electron hole pairs in the light-emitting layer are excited through the irradiation of electron beam from the irradiation source, to generate and emit a light.

公开(公告)号：US5294859A

公开(公告)日：1994-03-15

申请号：US37106

申请日：1993-03-26

申请人： Kazuhiko Yamanouchi ,  Mitsuhiro Tanaka ,  Masahiko Sugiyama ,  Yasufumi Horio ,  Masatsugu Oshima ,  Kenji Suzuki

发明人： Kazuhiko Yamanouchi ,  Mitsuhiro Tanaka ,  Masahiko Sugiyama ,  Yasufumi Horio ,  Masatsugu Oshima ,  Kenji Suzuki

IPC分类号： H03H9/145 ,  H03H9/64 ,  H01L41/08

CPC分类号： H03H9/643 ,  H03H9/14505

摘要： A surface acoustic wave filter device includes a substrate which comprises quartz or the like piezoelectric having a small temperature coefficient and which is formed with unidirectional transducers of asymmetrical construction. A floating electrode is spaced from intermediate position between adjacent positive and negative electrodes which are arranged in interdigital manner, to effectively utilize a mechanical reflection caused by the floating electrode. In consideration of the sign and magnitude of the reflection factor of the floating electrodes, short-circuited electrodes only are used for the floating electrodes. The surface acoustic wave filter device has improved temperature characteristic, insertion loss characteristic and phase characteristic.

摘要翻译： 表面声波滤波器装置包括具有温度系数小的石英等压电体的基板，其形成有非对称结构的单向换能器。 浮置电极与相互正交和负极之间的中间位置间隔开，以互指的方式布置，以有效地利用由浮动电极引起的机械反射。 考虑到浮动电极的反射系数的符号和大小，短路电极仅用于浮置电极。 声表面波滤波器具有改善的温度特性，插入损耗特性和相位特性。

公开(公告)号：US08415690B2

公开(公告)日：2013-04-09

申请号：US13457931

申请日：2012-04-27

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Mitsuhiro Tanaka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02381 ,  C23C16/0272 ,  C23C16/029 ,  C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  C30B29/68 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

摘要翻译： 提供了使用硅衬底作为基底的外延衬底。 一种外延衬底，其中在（111）单晶Si衬底上形成一组III族氮化物层，使得III族氮化物层组的（0001）晶面基本上平行于 所述基板包括：由AlN制成的第一III族氮化物层，其具有由柱状或粒状晶体或畴中至少一种构成的许多缺陷; 与第一III族氮化物层的界面成形为三维凹凸面的第二III族氮化物层; 以及外延形成在第二III族氮化物层上的第三III族氮化物层，作为梯度组成层，其中Al的存在比例在更接近第四族III族氮化物的部分中较小。

公开(公告)号：US20120126293A1

公开(公告)日：2012-05-24

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US08026718B2

公开(公告)日：2011-09-27

申请号：US12193851

申请日：2008-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： G01R33/07

CPC分类号： G01R33/07

摘要： An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0

摘要翻译： 本发明的一个方面提供一种磁传感器，其与传统的磁传感器相比在不低于300℃的高温范围内更好地运行。 具有异质结界面的工作层通过层叠由室温下电子浓度不大于1×1016 / cm3的GaN制成的第一层和由Al x Ga 1-x N（0

公开(公告)号：US07955437B2

公开(公告)日：2011-06-07

申请号：US10737602

申请日：2003-12-16

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/301 ,  C23C16/4401 ,  C23C16/4411 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262

摘要： An apparatus for fabricating a III-V nitride film by a MOCVD method, including a reactor prepared horizontally, a susceptor to hold a substrate thereon installed in the reactor, a heater to heat the substrate to a predetermined temperature via the susceptor, and a cooling mechanism to directly cool down at least the portion of the inner wall of the reactor opposite to the substrate.

摘要翻译： 一种用于通过MOCVD方法制造III-V族氮化物膜的装置，包括水平准备的反应器，用于将其上安装在反应器中的基板保持在其上的加热器，通过基座将基板加热至预定温度，以及冷却 直接冷却至少与反应器的反应器内壁的部分相反的机构。

公开(公告)号：US20100177483A1

公开(公告)日：2010-07-15

申请号：US12601839

申请日：2008-05-29

申请人： Akio Yoshimoto ,  Mitsuhiro Tanaka

发明人： Akio Yoshimoto ,  Mitsuhiro Tanaka

IPC分类号： H05K7/20 ,  H05K5/02

CPC分类号： H05K5/0034 ,  H05K3/284 ,  H05K5/006 ,  H05K5/061 ,  H05K5/065 ,  H05K7/1417 ,  H05K7/142 ,  H05K7/20418 ,  H05K2201/2018 ,  H05K2203/1316 ,  H05K2203/1581

摘要： A substrate includes a pair of surfaces opposing to each other in a direction. First electronic components are provided on one surface. Second electronic components lower than a maximum value of the height of the first electronic components in a direction are provided on the other surface. Insulating resin includes a covering part adhering and covering the second electronic components and the other surface, and side surface part extending from the periphery of the substrate to a side of the second electronic components along the direction. A lid covers the first electronic components from an opposite side of the substrate, and is fixed to the side surface part from the opposite side of the substrate.

摘要翻译： 衬底包括在一个方向上彼此相对的一对表面。 在一个表面上提供第一电子部件。 在另一个表面上设置有低于第一电子部件在一个方向上的高度的最大值的第二电子部件。 绝缘树脂包括粘附并覆盖第二电子部件和另一个表面的覆盖部分，以及沿着该方向从基板周边延伸到第二电子部件侧的侧表面部分。 盖子从基板的相对侧覆盖第一电子元件，并且从基板的相对侧固定到侧表面部分。

公开(公告)号：US20080308909A1

公开(公告)日：2008-12-18

申请号：US12193811

申请日：2008-08-19

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L29/20 ,  B32B7/00 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。