公开(公告)号：US20230170112A1

公开(公告)日：2023-06-01

申请号：US17920927

申请日：2020-08-26

Applicant: KOA CORPORATION

Inventor： Kenji Kameko

IPC: H01C7/06 ,  G01R15/14 ,  H01C1/14 ,  H01C17/00

CPC classification number: H01C7/06 ,  G01R15/146 ,  H01C1/14 ,  H01C17/00

Abstract: The present invention relates to a shunt resistor and a method for manufacturing the shunt resistor. The present invention relates to a current detection device including a shunt resistor. The shunt resistor (1) comprises a resistance element (5) and a pair of electrodes (6, 7) connected to both ends (5a, 5b) of the resistance element (5) in a first direction. The shunt resistor (1) has a projecting portion (11) formed on a side surface (1a), which is parallel to the first direction, of the shunt resistor (1), and a recessed portion (12) formed in a side surface (1b), which is an opposite side of the side surface (1a), of the shunt resistor (1), and extending in the same direction as the projection (11). The projecting portion (11) has a portion of the resistance element (5) and portions of the pair of electrodes (6, 7), and the recessed portion (12) has a side surface (5d) of the resistance element (5) parallel to the first direction.

公开(公告)号：US11646136B2

公开(公告)日：2023-05-09

申请号：US17703798

申请日：2022-03-24

Applicant: KOA CORPORATION

Inventor： Homare Sasaki ,  Yasuhiro Kamijo

IPC: H01C7/00 ,  H01C17/00 ,  H01C17/22 ,  H01C1/14

CPC classification number: H01C7/003 ,  H01C1/14 ,  H01C17/006 ,  H01C17/22

Abstract: A chip resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode created on both longitudinal ends of the insulated substrate, and a resistive element making a connection between the first and second front electrodes. The resistive element is formed in a meandering shape with a first region and a second region continuing in series via a jointing section between a pair of connecting portions. Moreover, in the first region, a first trimming groove for rough adjustment is formed to elongate a current path of the resistive element. In the second region, a second trimming groove is formed for fine adjustment extending in a direction angled with respect to a straight line along a direction in which the first trimming groove extends.

公开(公告)号：US11562837B2

公开(公告)日：2023-01-24

申请号：US17387349

申请日：2021-07-28

Applicant: KOA CORPORATION

Inventor： Satoshi Kanegae

IPC: H01C7/00 ,  H01C1/14 ,  H01C1/01

Abstract: Particularly, it is an object to provide a circuit substrate that can reduce a field intensity near an electrode having a high potential. A circuit substrate of the present invention includes an insulated substrate, a thin-film resistive element, and electrodes electrically connected to both sides of the thin-film resistive element, the thin-film resistive element and the electrodes being disposed on a surface of the insulated substrate. The circuit substrate is characterized in that the thin-film resistive element has a pattern in which a resistance wire is repeatedly folded back, and a dummy wire for reducing a field intensity is provided on a high-potential electrode side.

公开(公告)号：US20220392673A1

公开(公告)日：2022-12-08

申请号：US17769855

申请日：2020-09-24

Applicant: KOA CORPORATION

Inventor： Yasushi AKAHANE ,  Nobuhiko TAMADA

IPC: H01C1/14

Abstract: A chip component comprises: an insulating substrate on which a resistor serving as a functional element is formed; a pair of internal electrodes (front electrodes, end surface electrodes, and back electrodes) that is formed to cover both end portions of the insulating substrate and connected to the resistor; a barrier layer that is formed on a surface of each of the internal electrodes and mainly composed of nickel; and an external connection layer that is formed on a surface of the barrier layer and mainly composed of tin, and the barrier layer is composed of alloy plating (Ni—P) including nickel and phosphorus, which is formed by electrolytic plating, and a content ratio of phosphorus relative to nickel is set in a range of 0.5% to 5% so that the barrier layer has magnetism.

公开(公告)号：US11462343B2

公开(公告)日：2022-10-04

申请号：US16771393

申请日：2018-12-11

Applicant: KOA CORPORATION

Inventor： Yuichi Abe ,  Seiji Karasawa ,  Michio Kubota ,  Yoji Gomi ,  Koichi Minowa

IPC: H01C1/14 ,  H01C1/02 ,  H01C17/02

Abstract: An object is to provide a resistor manufacturing method and a resistor capable of suppressing variation in the thickness of a thermally conductive layer intervening between a resistive body and electrode plates. The method of manufacturing the resistor according to the present invention includes a step of forming an uncured first thermally conductive layer on a surface of a resistive body, a step of curing the first thermally conductive layer, a step of laminating an uncured second thermally conductive layer on a surface of the first thermally conductive layer, and a step of bending electrode plates respectively disposed at both sides of the resistive body, curing the second thermally conductive layer, and performing adhesion between the resistive body and the electrode plates via the first thermally conductive layer and the second thermally conductive layer.

公开(公告)号：US20220307918A1

公开(公告)日：2022-09-29

申请号：US17698459

申请日：2022-03-18

Applicant: KOA CORPORATION

Inventor： Miki YAZAWA

IPC: G01K7/24 ,  G01K1/08

Abstract: A sensor device according to the present invention includes: a sensor element including a temperature-sensitive resistor; and a protective cover that protects the sensor element, wherein the sensor element has a shape extending long along one direction, and the protective cover surrounds a periphery of the sensor element with a plurality of support pillars extending obliquely with respect to a longitudinal direction of the sensor element. It is preferable that the plurality of support pillars intersect in a lattice-like manner.

公开(公告)号：US20220291029A1

公开(公告)日：2022-09-15

申请号：US17641681

申请日：2020-09-11

Applicant: KOA CORPORATION

Inventor： Koji UENOYAMA ,  Shigeo GOTOH ,  Yoji KOBAYASHI

IPC: G01F1/69 ,  G01F15/12 ,  G01F15/18

Abstract: An object is to provide a flow sensing device improved in weather resistance and insect resistance. A flow sensing device includes: a cover member; a cap member disposed below the cover member; a foreign-body intrusion prevention net surrounding a space between the cover member and the cap member; a light emitting element disposed in a housing space surrounded by the cover member, the cap member, and the foreign-body intrusion prevention net; and a sensing element disposed inside the foreign-body intrusion prevention net in the housing space, the sensing element including a thermosensitive resistive element.

公开(公告)号：US11428715B2

公开(公告)日：2022-08-30

申请号：US16640127

申请日：2018-07-20

Applicant: KOA CORPORATION

Inventor： Tamotsu Endo

IPC: G01R19/00 ,  G01R1/20 ,  G01R1/30

Abstract: A current measurement device comprising: a shunt resistor; a pair of first and second voltage signal lines connected to the shunt resistor; and a current measurement circuit for measuring a current using a signal by the pair of first and second voltage signal lines. The pair of first and second voltage signal lines are connected to an amplifier circuit with which the current measurement circuit is provided to amplify a voltage signal. A third signal line which is a signal line different from the pair of first and second voltage signal lines and drawn from the shunt resistor is connected to a common line of the current measurement circuit.

公开(公告)号：US20220091058A1

公开(公告)日：2022-03-24

申请号：US17418000

申请日：2019-12-24

Applicant: KOA CORPORATION

Inventor： Junichi OTSUKA ,  Yoji KOBAYASHI

IPC: G01N27/04 ,  H01C17/22 ,  H01C17/28

Abstract: A sulfurization detection resistor makes it possible to detect a degree of sulfurization accurately and easily, and a manufacturing method for such sulfurization detection resistor. A sulfurization detection resistor includes an insulated substrate having a rectangular parallelepiped shape, a first front electrode and a second front electrode formed at both ends on a main surface of the insulated substrate, multiple sulfurization detecting conductors connected in parallel to the first front electrode, multiple resistive elements connected between the sulfurization detecting conductors and the second front electrode, and a protective film formed to partially cover the sulfurization detecting conductors and entirely cover the resistive elements. The sulfurization detecting conductors have their sulfurization detecting portions exposed out of the protective film, and different timings are set for these sulfurization detecting portions respectively to become disconnected depending on a cumulative amount of sulfurization.

公开(公告)号：US11164687B2

公开(公告)日：2021-11-02

申请号：US17052684

申请日：2019-05-08

Applicant: KOA CORPORATION

Inventor： Tamotsu Endo

IPC: H01C1/01 ,  G01K7/18 ,  H01C1/14 ,  H01C13/00

Abstract: Provided is a shunt resistor mount structure comprising: a shunt resistor including a pair of electrodes and a resistive body; a current detecting substrate having a control circuit mounted thereon, the substrate having a voltage detecting portion to which a pair of voltage detection terminals of the shunt resistor are connected; and a temperature sensor for measuring a temperature of the electrodes.