公开(公告)号：US20110159171A1

公开(公告)日：2011-06-30

申请号：US12803329

申请日：2010-06-23

申请人： Chain-Shu Hsu ,  Hsin-Fei Meng ,  Sheng-Fu Horng ,  Hsiao-Wen Zan ,  Hsin-Rong Tseng ,  Chung-Ling Yeh ,  Hung-Wei Hsu ,  Chang-Yao Liu ,  Hsiu-Yuan Yang

发明人： Chain-Shu Hsu ,  Hsin-Fei Meng ,  Sheng-Fu Horng ,  Hsiao-Wen Zan ,  Hsin-Rong Tseng ,  Chung-Ling Yeh ,  Hung-Wei Hsu ,  Chang-Yao Liu ,  Hsiu-Yuan Yang

IPC分类号： B05D5/06 ,  B05C9/14

CPC分类号： H01L51/0003 ,  H01L27/3239 ,  H01L51/56

摘要： A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.

摘要翻译： 提供一种制造有机发光二极管的方法及其装置。 该方法包括：提供衬底; 将第二有机分子溶解在溶剂中得到的第二有机分子溶液; 将所述第二有机分子溶液施加到所述基板的表面以形成湿膜层; 并通过加热单元加热湿膜层以从其中除去溶剂，从而形成第二有机分子膜。 该方法在制造用于制造大面积光电部件的均匀多层结构中是有效的。

公开(公告)号：US08927330B2

公开(公告)日：2015-01-06

申请号：US13572710

申请日：2012-08-13

申请人： Hsiao-Wen Zan ,  Chuang-Chuang Tsai ,  Chun-Cheng Yeh ,  Liang-Hao Chen

发明人： Hsiao-Wen Zan ,  Chuang-Chuang Tsai ,  Chun-Cheng Yeh ,  Liang-Hao Chen

IPC分类号： H01L21/363 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.

摘要翻译： 本文公开了一种制造金属氧化物薄膜晶体管的方法。 该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。

公开(公告)号：US20120313084A1

公开(公告)日：2012-12-13

申请号：US13480742

申请日：2012-05-25

申请人： CHUANG-CHUANG TSAI ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

发明人： CHUANG-CHUANG TSAI ,  Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Chun-Cheng Yeh

IPC分类号： H01L29/22 ,  H01L51/30

CPC分类号： H01L29/78696 ,  H01L29/78606 ,  H01L29/78693

摘要： A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

摘要翻译： 金属氧化物半导体晶体管包括栅极，金属氧化物有源层，栅极绝缘层，源极和漏极。 金属氧化物活性层具有第一表面和第二表面，并且第一表面面向栅极。 栅极绝缘层设置在栅极和金属氧化物有源层之间。 源极和漏极分别连接到金属氧化物活性层。 第二表面限定了源极和漏极之间的迁移率增强区域。 迁移率增强区域中的金属氧化物活性层的氧含量小于迁移率增强区域外的区域中的金属氧化物活性层的氧含量。 金属氧化物半导体晶体管具有高载流子迁移率。

公开(公告)号：US20120018719A1

公开(公告)日：2012-01-26

申请号：US13027554

申请日：2011-02-15

申请人： HSIAO-WEN ZAN ,  HSIN-FEI MENG ,  CHUANG-CHUANG TSAI ,  WEI-TSUNG CHEN ,  YU-CHIANG CHAO

发明人： HSIAO-WEN ZAN ,  HSIN-FEI MENG ,  CHUANG-CHUANG TSAI ,  WEI-TSUNG CHEN ,  YU-CHIANG CHAO

IPC分类号： H01L29/12 ,  H01L31/113

CPC分类号： H01L31/1013 ,  H01L51/0036 ,  H01L51/0562 ,  H01L51/428 ,  Y02E10/549

摘要： A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.

摘要翻译： 光电晶体管包括基板，栅极层，电介质层，有源层，源极和漏极以及光吸收层。 栅极层设置在基板的顶部，并且电介质层设置在栅极层的顶部。 有源层具有第一带隙并且设置在电介质层的顶部上，并且源极和漏极设置在有源层的顶部上。 光吸收层具有第二带隙并且被覆盖在有源层上，并且第二带隙小于第一带隙。

公开(公告)号：US20110284949A1

公开(公告)日：2011-11-24

申请号：US12786343

申请日：2010-05-24

申请人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Yu-Chiang Chao

发明人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Yu-Chiang Chao

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L51/057 ,  H01L51/0023

摘要： A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.

摘要翻译： 提供垂直晶体管和制造垂直晶体管的方法。 垂直晶体管具有基板，形成在基板上的第一电极，形成在第一电极上的第一绝缘层，第一电极的一部分从第一绝缘层露出并具有大于50nm且不大于 300nm，形成在第一绝缘层上的栅电极，形成在第一电极上的半导体层和形成在半导体层上的第二电极。

公开(公告)号：US06410373B1

公开(公告)日：2002-06-25

申请号：US09845438

申请日：2001-04-30

申请人： Ting-Chang Chang ,  Hsiao-Wen Zan ,  Po-Sheng Shih

发明人： Ting-Chang Chang ,  Hsiao-Wen Zan ,  Po-Sheng Shih

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78666 ,  H01L29/78684

摘要： A method of forming a polysilicon thin film transistor. An amorphous silicon channel layer is formed over an insulating substrate. An active region is patterned out in the amorphous silicon channel layer. An oxide layer and a gate electrode are sequentially formed over the amorphous silicon channel layer. A lightly doped source/drain region is formed in the amorphous silicon channel layer and then a spacer is formed over the gate electrode. A source/drain region is formed in the amorphous silicon channel layer. A portion of the oxide layer above the source/drain region is removed. An isolation spacer is formed on the sidewalls of the spacer. A self-aligned silicide layer is formed at the top section of the spacer and the source/drain region. Finally, a metal-induced lateral crystallization process is conducted to transform the amorphous silicon channel layer into a lateral-crystallization-polysilicon channel layer.

摘要翻译： 一种形成多晶硅薄膜晶体管的方法。 在绝缘基板上形成非晶硅沟道层。 在非晶硅沟道层中形成有源区。 在非晶硅沟道层上依次形成氧化物层和栅电极。 在非晶硅沟道层中形成轻掺杂的源极/漏极区，然后在栅极上形成间隔物。 源极/漏极区域形成在非晶硅沟道层中。 除去源极/漏极区上方的氧化物层的一部分。 在间隔物的侧壁上形成隔离间隔物。 在间隔物的顶部和源极/漏极区域上形成自对准的硅化物层。 最后，进行金属诱导的横向结晶工艺以将非晶硅沟道层转变成横向结晶 - 多晶硅沟道层。

公开(公告)号：US08723503B2

公开(公告)日：2014-05-13

申请号：US13009440

申请日：2011-01-19

申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

IPC分类号： H01L29/08 ,  H01L21/00 ,  G01N33/543 ,  H01L51/52 ,  H01L51/05 ,  G01N27/414

CPC分类号： G01N27/3278 ,  G01N27/414 ,  G01N33/54373 ,  G01N33/5438 ,  H01L51/057 ,  H01L51/5203

摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

摘要翻译： 本发明提供一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。 本发明的垂直型传感器提供即时，灵敏和快速的检测。

公开(公告)号：US20120325318A1

公开(公告)日：2012-12-27

申请号：US13167068

申请日：2011-06-23

申请人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Sheng-Fu Horng ,  Yu-Chiang Chao ,  Yuan-Pai Lin

发明人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Sheng-Fu Horng ,  Yu-Chiang Chao ,  Yuan-Pai Lin

IPC分类号： H01L51/46 ,  H01L31/18

CPC分类号： H01L51/4213 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  Y02E10/549

摘要： A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.

摘要翻译： 提供了一种太阳能电池，其特征在于，在n型半导体层和p型半导体层之间形成非常薄的光吸收体，使得吸收体用于吸收太阳能，而p型半导体层可能不吸收光 。 在分离电子和空穴之后，载流子在传导期间不会复合，以避免能量损失。

公开(公告)号：US08110433B2

公开(公告)日：2012-02-07

申请号：US12656331

申请日：2010-01-26

申请人： Cheng Wei Chou ,  Hsiao Wen Zan ,  Jenn-Chang Hwang ,  Chung Hwa Wang ,  Li Shiuan Tsai ,  Wen Chieh Wang

发明人： Cheng Wei Chou ,  Hsiao Wen Zan ,  Jenn-Chang Hwang ,  Chung Hwa Wang ,  Li Shiuan Tsai ,  Wen Chieh Wang

IPC分类号： H01L21/40

CPC分类号： H01L51/001 ,  H01L51/0097 ,  H01L51/0545

摘要： A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.

摘要翻译： 公开了一种制造有机薄膜晶体管的方法，其包括以下步骤：（S1）在基板上形成栅电极; （S2），在所述栅电极上形成栅极绝缘层; （S3）在所述栅极绝缘层的表面上提供气体以在所述栅极绝缘层的表面上形成疏水性分子; （S4）在其上具有疏水分子的栅绝缘层上形成有机半导体层，源电极和漏电极，其中步骤（S3）的气体是选自卤素取代的烃， 未取代的烃，及其混合物。 本发明的方法利用包含碳或氟原子的气体在栅极绝缘层的表面上进行表面处理，因此可以提高栅极绝缘层表面的疏水性，并且可以使OTFT的电性能 改进。 此外，公开了一种用于栅绝缘层的表面处理方法。

公开(公告)号：US20090167663A1

公开(公告)日：2009-07-02

申请号：US12102277

申请日：2008-04-14

申请人： Ming-Dou Ker ,  Hsiao-Wen Zan ,  Ting-Chou Lu

发明人： Ming-Dou Ker ,  Hsiao-Wen Zan ,  Ting-Chou Lu

IPC分类号： G09G3/36 ,  G05F3/02

CPC分类号： G05F3/30 ,  G09G3/3696 ,  G09G2300/0408 ,  G09G2320/041

摘要： A liquid crystal display apparatus comprises a system-on-glass (SOG) and a bandgap reference (BGR) circuit. The BGR circuit, which is formed on the SOG, comprises a current mirror set and a diode set. The current mirror set is configured to generate a plurality of fixed currents. The diode set, which is formed by a plurality of diode-connected thin film transistors (TFT), is configured to generate a BGR voltage according to the fixed currents.

摘要翻译： 液晶显示装置包括玻璃系统（SOG）和带隙基准（BGR）电路。 形成在SOG上的BGR电路包括电流镜组和二极管组。 电流镜组被配置为产生多个固定电流。 由多个二极管连接的薄膜晶体管（TFT）形成的二极管组被配置为根据固定电流产生BGR电压。