公开(公告)号：US20220384737A1

公开(公告)日：2022-12-01

申请号：US17873240

申请日：2022-07-26

申请人： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

发明人： Mingqian He ,  Robert George Manley ,  Karan Mehrotra ,  Hsin-Fei Meng ,  Hsiao-Wen Zan

IPC分类号： H01L51/00

摘要： Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

公开(公告)号：US08723165B2

公开(公告)日：2014-05-13

申请号：US13111205

申请日：2011-05-19

申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L51/44

CPC分类号： H01L51/442 ,  H01L51/057 ,  H01L51/4253 ,  H01L51/5215 ,  H01L51/5234 ,  H01L51/5296 ,  Y02E10/549

摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

公开(公告)号：US08722454B2

公开(公告)日：2014-05-13

申请号：US13668451

申请日：2012-11-05

申请人： Hsin-Fei Meng ,  Hao-Wu Lin ,  Sheng-Fu Horng ,  Hsiao-Wen Zan ,  Hao-Wen Chang ,  Yu-Fan Chang ,  Yu-Chian Chiu

发明人： Hsin-Fei Meng ,  Hao-Wu Lin ,  Sheng-Fu Horng ,  Hsiao-Wen Zan ,  Hao-Wen Chang ,  Yu-Fan Chang ,  Yu-Chian Chiu

IPC分类号： H01L51/40

CPC分类号： H01L51/508 ,  H01L51/0003 ,  H01L51/0072 ,  H01L51/506 ,  H01L51/5076 ,  H01L51/56

摘要： A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.

摘要翻译： 提供一种制造有机电子部件的方法。 该方法包括提供基底和有机材料的步骤; 将有机材料涂覆到基材上; 加热衬底以形成第一载流子传输层; 将具有金属离子的材料掺杂到有机溶剂中以形成有机溶液; 以及将所述有机溶液施加到所述第一载流子传输层上以形成第二载流子传输层。

公开(公告)号：US20130005077A1

公开(公告)日：2013-01-03

申请号：US13281665

申请日：2011-10-26

申请人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Sheng-Fu Horng ,  Hsiu-Yuan Yang ,  Kuo-Jui Huang ,  Hao-Wen Chang ,  Chun-Yu Chen ,  Yu-Chiang Chao ,  Yu-Fan Chang ,  Bo-Jie Chang

发明人： Hsin-Fei Meng ,  Hsiao-Wen Zan ,  Sheng-Fu Horng ,  Hsiu-Yuan Yang ,  Kuo-Jui Huang ,  Hao-Wen Chang ,  Chun-Yu Chen ,  Yu-Chiang Chao ,  Yu-Fan Chang ,  Bo-Jie Chang

IPC分类号： H01L51/40 ,  H05K13/00 ,  B05C9/14

CPC分类号： H01L51/0002 ,  B05D3/0254 ,  H01L51/0008 ,  H01L51/0026 ,  H01L51/0085 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521 ,  Y10T29/49002

摘要： A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.

摘要翻译： 提供了化学机械抛光方法。 化学机械抛光方法包括提供待研磨的多个半导体元件，获得待研磨的每个半导体元件的相应尺寸，并根据其各自的尺寸对每个半导体元件进行抛光的步骤。

公开(公告)号：US20120188627A1

公开(公告)日：2012-07-26

申请号：US13104100

申请日：2011-05-10

申请人： YING-PING CHEN ,  Hsiao-Wen Zan ,  Chuang-Chuang Tsai ,  Yung-Sheng Chang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

发明人： YING-PING CHEN ,  Hsiao-Wen Zan ,  Chuang-Chuang Tsai ,  Yung-Sheng Chang ,  Chia-Chun Yeh ,  Ted-Hong Shinn

IPC分类号： G02F1/153 ,  G02F1/03

CPC分类号： H04Q9/00 ,  H04Q2209/10 ,  H04Q2209/40

摘要： A smart window includes a windowpane, at least one sensor and a wireless signal transceiver. The sensor is disposed on the windowpane and configured for detecting an environmental factor and accordingly outputting a sensing signal. The wireless signal transceiver is disposed on the windowpane and electrically connected to the sensor. The wireless signal transceiver is configured for further transmitting the sensing signal from the sensor. A smart window system includes the aforementioned smart window. The smart window and the smart window system adopt wireless communication manner to transmit the sensing signals, and thereby the smart window system has an overall modulation to an environmental factor.

摘要翻译： 智能窗口包括窗玻璃，至少一个传感器和无线信号收发器。 传感器设置在窗玻璃上，并且被配置为检测环境因素并相应地输出感测信号。 无线信号收发器设置在窗玻璃上并电连接到传感器。 无线信号收发器被配置为进一步发送来自传感器的感测信号。 智能窗系统包括上述智能窗。 智能窗口和智能窗口系统采用无线通信方式传输感测信号，从而使智能窗口系统具有对环境因素的整体调制。

公开(公告)号：US20120086431A1

公开(公告)日：2012-04-12

申请号：US13009440

申请日：2011-01-19

申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Ming-Zhi Dai ,  Yu-Chiang Chao

IPC分类号： G01R19/00 ,  H01L21/02 ,  H01L29/66

CPC分类号： G01N27/3278 ,  G01N27/414 ,  G01N33/54373 ,  G01N33/5438 ,  H01L51/057 ,  H01L51/5203

摘要： The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.

摘要翻译： 本发明提供了一种垂直型传感器，包括基板; 形成在所述基板上的第一电极; 感测层，其形成在所述第一电极层上并且与目标物质反应，其中所述第一电极层介于所述基板和所述感测层之间; 以及形成在所述感测层上并且具有多个开口的第二电极层，其中所述感测层插入在所述第一电极层和所述第二电极层之间，并且所述目标物质经由所述多个开口接触所述感测层。 本发明的垂直型传感器提供即时，灵敏和快速的检测。

公开(公告)号：US20070264747A1

公开(公告)日：2007-11-15

申请号：US11308845

申请日：2006-05-15

申请人： Kuo-Hsi Yen ,  Cheng-Wei Chou ,  Hsiao-Wen Zan ,  Chuan-Yi Wu

发明人： Kuo-Hsi Yen ,  Cheng-Wei Chou ,  Hsiao-Wen Zan ,  Chuan-Yi Wu

IPC分类号： H01L51/40

CPC分类号： H01L51/0017 ,  H01L51/0055 ,  H01L51/0541

摘要： A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.

摘要翻译： 提供了图案化工艺。 图案化处理包括以下步骤。 首先，提供基板。 然后，在衬底上形成图案化的自组装单层（SAM）。 之后，在衬底上形成有机材料层以覆盖自组装单层。 此后，去除有机材料层的一部分，其中与图案化的SAM接触的有机材料层被保持成图案化的有机材料层。

公开(公告)号：US20130045567A1

公开(公告)日：2013-02-21

申请号：US13572710

申请日：2012-08-13

申请人： Hsiao-Wen ZAN ,  Chuang-Chuang TSAI ,  Chun-Cheng YEH ,  Liang-Hao CHEN

发明人： Hsiao-Wen ZAN ,  Chuang-Chuang TSAI ,  Chun-Cheng YEH ,  Liang-Hao CHEN

IPC分类号： H01L21/363

CPC分类号： H01L29/7869

摘要： Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.

摘要翻译： 本文公开了一种制造金属氧化物薄膜晶体管的方法。 该方法包括以下步骤：（a1）在基板上形成栅电极; （a2）在所述栅电极上形成栅极绝缘层; （a3）在栅极绝缘层上形成具有沟道区的金属氧化物半导体层; （a4）在所述金属氧化物半导体层上形成源电极和漏电极，其中所述源电极通过所述沟道区域露出的间隙与所述漏电极间隔开; （a5）在沟道区上形成迁移率增强层，其中迁移率增强层不与源电极和漏电极接触; 和（a6）在约200℃至350℃的温度的环境中退火金属氧化物半导体层和迁移率增强层。

公开(公告)号：US20120235120A1

公开(公告)日：2012-09-20

申请号：US13111205

申请日：2011-05-19

申请人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

发明人： Hsiao-Wen Zan ,  Hsin-Fei Meng ,  Wu-Wei Tsai ,  Yu-Chiang Chao

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L51/48 ,  H01L51/44

CPC分类号： H01L51/442 ,  H01L51/057 ,  H01L51/4253 ,  H01L51/5215 ,  H01L51/5234 ,  H01L51/5296 ,  Y02E10/549

摘要： A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

摘要翻译： 提供了一种垂直电光部件及其形成方法。 垂直电光部件包括基板，形成在基板上的第一电极层，形成在第一电极层上的图案化绝缘层，形成在图案化绝缘层上的金属层，形成在第一电极层上的半导体层， 以及形成在所述半导体层上的第二电极层，其中所述半导体层封装所述图案化绝缘层和所述金属层。 因此，垂直电光部件具有垂直晶体管的低操作电压和光电二极管的高反应速度，并且可以用于形成发光晶体管。

公开(公告)号：US20120018718A1

公开(公告)日：2012-01-26

申请号：US12927835

申请日：2010-11-26

申请人： Hsiao-Wen Zan ,  Wei-Tsung Chen ,  Cheng-Wei Chou ,  Chuang-Chuang Tsai

发明人： Hsiao-Wen Zan ,  Wei-Tsung Chen ,  Cheng-Wei Chou ,  Chuang-Chuang Tsai

IPC分类号： H01L29/12 ,  H01L21/04

CPC分类号： H01L29/7869 ,  H01L29/42384 ,  H01L29/66969

摘要： A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.

摘要翻译： 一种自对准顶栅薄膜晶体管及其制造方法。 该方法包括制备其上依次形成有氧化物半导体层，电介质层和金属层的衬底，其中氧化物半导体层包括分别不被电介质层和金属层覆盖的第一和第二连接区域， 所述第一和第二连接区域在进行加热处理或紫外线照射之后具有导体的性质; 以及源极电极和漏电极，分别形成在所述基板上并连接到所述第一和第二连接区域。 因此，不需要现有技术所要求的离子掺杂剂的处理，可以减少第一和第二连接区域的接触电阻，从而简化了制造工艺。 此外，源电极和漏电极可以精确地定位并进一步提高器件的性能。