公开(公告)号：US20080132086A1

公开(公告)日：2008-06-05

申请号：US12029328

申请日：2008-02-11

Applicant: Zhong Dong ,  Chiliang Chen ,  Ching-Hwa Chen

Inventor： Zhong Dong ,  Chiliang Chen ,  Ching-Hwa Chen

IPC: H01L21/31

CPC classification number: H01L29/0847 ,  H01L21/28202 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11536 ,  H01L27/11546 ,  H01L29/7881

Abstract: In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

Abstract translation: 原位蒸汽发生（ISSG）用于降低硅和氧化硅区域的氮浓度。

公开(公告)号：US07122415B2

公开(公告)日：2006-10-17

申请号：US10243379

申请日：2002-09-12

Applicant: Chuck Jang ,  Zhong Dong ,  Vei-Han Chan ,  Ching-Hwa Chen

Inventor： Chuck Jang ,  Zhong Dong ,  Vei-Han Chan ,  Ching-Hwa Chen

IPC: H01L21/8238

CPC classification number: H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/28211 ,  H01L21/28273 ,  H01L21/3162 ,  H01L21/31683 ,  H01L29/511

Abstract: Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.

Abstract translation: 通过原子层沉积沉积氧化铝以形成用于非易失性存储器件的多晶硅介电层的高k电介质。 增加的电容耦合可以允许在浮动栅极和控制栅极之间使用较厚的氧化物层，从而提高根据本发明制造的存储器单元的可靠性和更长寿命。

公开(公告)号：US5198725A

公开(公告)日：1993-03-30

申请号：US729211

申请日：1991-07-12

Applicant: Ching-Hwa Chen ,  Gerald Yin ,  Takashi Inoue

Inventor： Ching-Hwa Chen ,  Gerald Yin ,  Takashi Inoue

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32678

Abstract: A microwave plasma generating device including a plasma chamber for generating plasma, a reaction chamber having a specimen stage on which a specimen is treated with the plasma, a gas supply for supplying gas to the plasma generating chamber, a microwave generator for generating a microwave electric field in the plasma and reaction chambers and a plurality of axially spaced apart and concentric electromagnet coils for generating a magnetic field in the plasma and reaction chambers. The microwave electric field and the magnetic field have perpendicularly crossing components and the magnetic field has a strength which decreases in the axial direction from the plasma chamber towards the reaction chamber with constant strength magnetic flux density lines lying in planes which are substantially parallel to each other and perpendicular to the axial direction. The magnetic field produces a flat ECR condition wherein the ECR layer extends perpendicularly to the axial direction over at least 50% of the width of the plasma chamber. In a method of using this device, upper and lower electromagnets produce magnetic fields such that the magnetic field produced by the lower electromagnet is weaker than that produced by the first electromagnet. For instance, the upper electromagnet can be supplied a higher amount of current than the lower electromagnet. Alternatively, the upper and lower electromagnets can be supplied the same amount of current but the lower electromagnet can be larger in diameter than the first electromagnet. This allows the ECR layer to be made thicker in the axial direction than an ECR layer produced by a conventional plasma generating device.

Abstract translation: 一种包括用于产生等离子体的等离子体室的微波等离子体产生装置，具有用等离子体处理试样的试样台的反应室，用于向等离子体发生室供给气体的气体供给装置，用于产生微波电力的微波发生器 等离子体和反应室中的多个磁场和用于在等离子体和反应室中产生磁场的多个轴向间隔开和同心的电磁线圈。 微波电场和磁场具有垂直交叉分量，并且磁场具有从等离子体室朝向反应室的轴向方向上减小的强度，其中恒定强度的磁通密度线位于彼此基本平行的平面中 并垂直于轴向。 磁场产生平坦的ECR条件，其中ECR层在等离子体室的宽度的至少50％上垂直于轴向方向延伸。 在使用该装置的方法中，上下电磁体产生磁场，使得由下电磁体产生的磁场弱于由第一电磁体产生的磁场。 例如，可以向上部电磁体提供比下部电磁体更高的电流量。 或者，上电磁体和下电磁体可以供给相同量的电流，但是下电磁体的直径可以大于第一电磁体。 这允许ECR层在轴向方向上比由常规等离子体产生装置产生的ECR层更厚。

公开(公告)号：US4856114A

公开(公告)日：1989-08-15

申请号：US224608

申请日：1988-07-27

Applicant: Jiann-Jong Chen ,  Ching-Hwa Chen

Inventor： Jiann-Jong Chen ,  Ching-Hwa Chen

IPC: A41D25/02

CPC classification number: A41D25/008 ,  A41D25/02

Abstract: The present invention provides a seaman style preset necktie characterized mainly in that the portions of the necktie below the tie knot are bifurated into two branches, there are no inner and outer ties as those with conventional neckties, and that the tie knot is suspended before the wearer's chest instead of being tied adjacent to the neck opening. In the present invention, both ends of the necktie are provided with zippers on the same side and the tie knot is provided with a pair of zipper sliders which are disposed invertedly relative to each other, the upper slider causing the portions of the necktie body to be gathered while the lower one causing them to be separated again, such that the position of the tie knot can be adjusted by sliding the sliders. After proper adjustment, by means of the fastening means on the ends of the outer cover of the tie knot, it is only necessary to fold and press said outer cover of the tie knot to be securely set.

Abstract translation: 本发明提供了一种海员风格的预制领带，其特征在于，将领结下方的领带部分分为两个分支，不具有与传统领带相同的内，外领带，并且领结在 佩戴者的胸部，而不是被绑在颈部开口附近。 在本发明中，领带的两端在同一侧设置有拉链，并且扣环设置有相对于彼此倒置布置的一对拉链滑块，上滑块使领带主体的部分 聚集在一起，而较低的一个使它们再次分离，使得可以通过滑动滑块来调节打结的位置。 在适当调整后，通过紧固装置在结结外壳的端部，仅需要折叠并按压所述结节的外盖以便牢固地固定。

公开(公告)号：US07851339B2

公开(公告)日：2010-12-14

申请号：US12128996

申请日：2008-05-29

Applicant: Zhong Dong ,  Ching-Hwa Chen

Inventor： Zhong Dong ,  Ching-Hwa Chen

IPC: H01L21/225

CPC classification number: H01L21/324 ,  H01L21/28167 ,  H01L21/28238 ,  H01L29/78

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract translation: 通过在氮气释放气氛中进行高温退火，同时通过包含容易扩散的原子的牺牲氧化物涂层涂覆基底，从而改善在单晶衬底上形成的场效应晶体管和其它通道相关器件的性能，所述牺牲氧化物涂层可形成带负电荷的离子， 可以深层扩散到底物中。 在一个实施方案中，容易扩散的原子在牺牲氧化物涂层中包含至少5％的原子浓度的氯原子，并且氮气释放气氛包括NO。 高温退火在低于1100℃的温度下进行少于10小时。

公开(公告)号：US20090032861A1

公开(公告)日：2009-02-05

申请号：US11830524

申请日：2007-07-30

Applicant: Zhong Dong ,  Chiliang Chen ,  Ching-Hwa Chen

Inventor： Zhong Dong ,  Chiliang Chen ,  Ching-Hwa Chen

IPC: H01L29/792 ,  H01L21/3205

CPC classification number: H01L29/42332 ,  H01L29/40114 ,  H01L29/40117 ,  H01L29/42348

Abstract: A nonvolatile memory has a charge trapping layer which includes a layer (130) made of silicon nitride doped with germanium or phosphorus (210). The germanium or phosphorus contains a large percentage of scattered, non-crystallized atoms uniformly distributed in the silicon nitride layer to increase the charge trapping density.

Abstract translation: 非易失性存储器具有电荷捕获层，其包含掺杂有锗或磷的氮化硅（210）制成的层（130）。 锗或磷含有大量的均匀分布在氮化硅层中的散射的非结晶原子，以增加电荷捕获密度。

公开(公告)号：US06337277B1

公开(公告)日：2002-01-08

申请号：US09606842

申请日：2000-06-28

Applicant: Wen-Ben Chou ,  Rajinder Dhindsa ,  Ching-Hwa Chen

Inventor： Wen-Ben Chou ,  Rajinder Dhindsa ,  Ching-Hwa Chen

IPC: H01L21302

CPC classification number: H01L21/31138

Abstract: A method of cleanly etching an organic polymer layer disposed over a substrate is disclosed. The invention is particularly useful in damascene processing where openings are etched in the organic polymer layer to form interconnects. The method includes lowering the temperature of the substrate. The method also includes flowing H2O vapor over the organic polymer layer and condensing (or freezing) the H2O vapor on the organic polymer layer. The method additionally includes etching through the organic polymer layer and the condensed H2O vapor to form an opening having a side wall. The condensed (or frozen) H2O vapor is arranged to form a passivating film (of ice) along the side wall of the opening to protect the side wall from etching.

Abstract translation: 公开了一种干净地蚀刻位于衬底上的有机聚合物层的方法。 本发明特别适用于在有机聚合物层中蚀刻开口以形成互连的镶嵌加工中。 该方法包括降低基板的温度。 该方法还包括将H 2 O蒸气流过有机聚合物层并将H 2 O蒸气冷凝（或冷冻）在有机聚合物层上。 该方法还包括通过有机聚合物层和冷凝的H 2 O蒸气蚀刻以形成具有侧壁的开口。 冷凝（或冷冻的）H 2 O蒸气被布置成沿着开口的侧壁形成钝化膜（冰），以保护侧壁免受蚀刻。

公开(公告)号：US08283733B2

公开(公告)日：2012-10-09

申请号：US12940507

申请日：2010-11-05

Applicant: Zhong Dong ,  Ching-Hwa Chen

Inventor： Zhong Dong ,  Ching-Hwa Chen

IPC: H01L29/36 ,  H01L29/772

CPC classification number: H01L21/324 ,  H01L21/28167 ,  H01L21/28238 ,  H01L29/78

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract translation: 通过在氮气释放气氛中进行高温退火，同时通过包含容易扩散的原子的牺牲氧化物涂层涂覆基底，从而改善在单晶衬底上形成的场效应晶体管和其它通道相关器件的性能，所述牺牲氧化物涂层可形成带负电荷的离子， 可以深层扩散到底物中。 在一个实施方案中，容易扩散的原子在牺牲氧化物涂层中包含至少5％的原子浓度的氯原子，并且氮气释放气氛包括NO。 高温退火在低于1100℃的温度下进行少于10小时。

公开(公告)号：US20110095344A1

公开(公告)日：2011-04-28

申请号：US12940507

申请日：2010-11-05

Applicant: Zhong Dong ,  Ching-Hwa Chen

Inventor： Zhong Dong ,  Ching-Hwa Chen

IPC: H01L29/772

CPC classification number: H01L21/324 ,  H01L21/28167 ,  H01L21/28238 ,  H01L29/78

Abstract: Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing atmosphere while the substrate is coated by a sacrificial oxide coating containing easily diffusible atoms that can form negatively charged ions and can diffuse deep into the substrate. In one embodiment, the easily diffusible atoms comprise at least 5% by atomic concentration of chlorine atoms in the sacrificial oxide coating and the nitrogen releasing atmosphere includes NO. The high temperature anneal is carried out for less than 10 hours at a temperature less than 1100° C.

Abstract translation: 通过在氮气释放气氛中进行高温退火，同时通过包含容易扩散的原子的牺牲氧化物涂层涂覆基底，从而改善在单晶衬底上形成的场效应晶体管和其它通道相关器件的性能，所述牺牲氧化物涂层可形成带负电荷的离子， 可以深层扩散到底物中。 在一个实施方案中，容易扩散的原子在牺牲氧化物涂层中包含至少5％的原子浓度的氯原子，并且氮气释放气氛包括NO。 高温退火在低于1100℃的温度下进行少于10小时。

公开(公告)号：US07910429B2

公开(公告)日：2011-03-22

申请号：US10821100

申请日：2004-04-07

Applicant: Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Wai Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Ming Yang

Inventor： Zhong Dong ,  Chuck Jang ,  Ching-Hwa Chen ,  Chunchieh Huang ,  Jin-Ho Kim ,  Vei-Han Chan ,  Chung Wai Leung ,  Chia-Shun Hsiao ,  George Kovall ,  Steven Ming Yang

IPC: H01L21/336

CPC classification number: H01L21/28273 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/7881

Abstract: Conventional fabrication of sidewall oxide around an ONO-type memory cell stack usually produces Bird's Beak because prior to the fabrication, there is an exposed sidewall of the ONO-type memory cell stack that exposes side parts of a plurality of material layers respectively composed of different materials. Certain materials in the stack such as silicon nitrides are more difficult to oxidize than other materials in the stack such polysilicon. As a result oxidation does not proceed uniformly along the multi-layered height of the sidewall. The present disclosure shows how radical-based fabrication of sidewall dielectric can help to reduce the Bird's Beak formation. More specifically, it is indicated that short-lived oxidizing agents (e.g., atomic oxygen) are able to better oxidize difficult to oxidize materials such as silicon nitride and the it is indicated that the short-lived oxidizing agents alternatively or additionally do not diffuse as deeply through already oxidized layers of the sidewall such as silicon oxide layers. As a result, a more uniform sidewall dielectric can be fabricated with more uniform breakdown voltages along it height.

Abstract translation: 通常在ONO型存储单元堆叠周围制造侧壁氧化物通常产生鸟喙，因为在制造之前，存在ONO型存储单元堆叠的暴露的侧壁，其暴露分别由不同的多个材料层组成的多个材料层的侧面部分 材料 堆叠中的某些材料如氮化硅比堆叠中的其它材料更难以氧化，这样的多晶硅。 结果，氧化不沿着侧壁的多层高度均匀地进行。 本公开显示了基于侧壁电介质的基于基础的制造有助于减少鸟喙形成。 更具体地，表明短寿命氧化剂（例如原子氧）能够更好地氧化难以氧化的材料如氮化硅，并且表明短寿命氧化剂交替地或另外不扩散为 深深地通过侧壁的已氧化层，例如氧化硅层。 结果，可以制造更均匀的侧壁电介质，沿其高度具有更均匀的击穿电压。