公开(公告)号：US20220148847A1

公开(公告)日：2022-05-12

申请号：US17523359

申请日：2021-11-10

Applicant: Axcelis Technologies, Inc.

Inventor： Atul Gupta ,  Scott E Galica

IPC: H01J37/20 ,  H01L21/683

Abstract: A thermal electrostatic clamp has a central electrostatic portion associated with a central region of a workpiece. A central body has a clamping surface and one or more electrodes are associated with the central body. One or more electrodes selectively electrostatically clamp at least the central region of the workpiece to the clamping surface based on an electrical current passed therethrough. One or more first heaters of the central body selectively heat the central electrostatic portion to a first temperature. A non-electrostatic peripheral portion associated with a peripheral region of the workpiece has a peripheral body encircling the central body, separated by a gap. The peripheral body is positioned beneath the peripheral region of the workpiece. The peripheral portion does not electrostatically clamp the peripheral region of the workpiece. One or more second heaters of the peripheral body selectively heat the non-electrostatic peripheral portion to a second temperature.

公开(公告)号：US11062873B2

公开(公告)日：2021-07-13

申请号：US16409423

申请日：2019-05-10

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K Colvin ,  Tseh-Jen Hsieh

IPC: H01J37/08 ,  H01J37/317

Abstract: A terminal system for an ion implantation system has an ion source with a housing and extraction electrode assembly having one or more aperture plates. A gas box is electrically coupled to the ion source. A gas source is within the gas box to provide a gas at substantially the same electrical potential as the ion source assembly. A bleed gas conduit introduces the gas to a region internal to the housing of the ion source and upstream of at least one of the aperture plates. The bleed gas conduit has one or more feed-throughs extending through a body of the ion source assembly, such as a hole in a mounting flange of the ion source. The mounting flange may be a tubular portion having a channel. The bleed gas conduit can further have a gas distribution apparatus defined as a gas distribution ring. The gas distribution ring can generally encircle the tubular portion of the mounting flange.

公开(公告)号：US20210090841A1

公开(公告)日：2021-03-25

申请号：US16953509

申请日：2020-11-20

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Richard Rzeszut ,  Wendy Colby

IPC: H01J37/08 ,  H01J37/317

Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.

公开(公告)号：US20200381209A1

公开(公告)日：2020-12-03

申请号：US16887446

申请日：2020-05-29

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/32

Abstract: An ion implantation system has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state. The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state.

公开(公告)号：US20200350139A1

公开(公告)日：2020-11-05

申请号：US16860386

申请日：2020-04-28

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara

IPC: H01J37/317 ,  H01J37/32 ,  H01L21/683

Abstract: A gas generation system for an ion implantation system has a hydrogen generator configured to generate hydrogen gas within an enclosure. A chuck, such as an electrostatic chuck, supports a workpiece in an end station of the ion implantation system, and a delivery system provides the hydrogen gas to the chuck. The hydrogen gas can be provided through the chuck to a backside of the workpiece. Sensors can detect a presence of the hydrogen gas within the enclosure. A controller can control the hydrogen generator. An exhaust system can pass air through the enclosure to prevent a build-up of the hydrogen gas within the enclosure. A purge gas system provides a dilutant gas to the enclosure. An interlock system can control the hydrogen generator, delivery system, purge gas system, and exhaust system to mitigate hydrogen release based on a signal from the one or more sensors.

公开(公告)号：US10714317B1

公开(公告)日：2020-07-14

申请号：US16239995

申请日：2019-01-04

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett

IPC: H01J37/32 ,  H01L21/265 ,  H01L21/67 ,  H01J37/317 ,  H01L21/683

Abstract: A workpiece processing system has a chamber with one or more chamber walls defining surfaces enclosing a chamber volume. One or more chamber wall heaters selectively heat the chamber walls to a chamber wall temperature. A workpiece support within the chamber selectively supports a workpiece having one or more materials having a respective condensation temperature, above which, the one or more materials are respectively in a gaseous state. A heater apparatus selectively heats the workpiece to a predetermined temperature. A controller heats the workpiece to the predetermined temperature by controlling the heater apparatus, heating the one or more materials to respectively form one or more outgassed materials within the chamber volume. The controller further controls the chamber wall temperature by controlling the chamber wall heaters, where the chamber wall temperature is greater than a condensation temperature of the outgassed materials, preventing condensation of the outgassed material on the chamber surfaces.

公开(公告)号：US10679818B2

公开(公告)日：2020-06-09

申请号：US16100645

申请日：2018-08-10

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Neil Colvin

IPC: H01J37/08 ,  H01J37/317

Abstract: An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

公开(公告)号：US10483086B2

公开(公告)日：2019-11-19

申请号：US14978120

申请日：2015-12-22

Applicant: Axcelis Technologies, Inc.

Inventor： Andy M. Ray ,  Edward C. Eisner ,  Bo H. Vanderberg

IPC: H01J37/30 ,  H01J37/304 ,  H01J37/317

Abstract: An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.

公开(公告)号：US10324121B2

公开(公告)日：2019-06-18

申请号：US13729524

申请日：2012-12-28

Applicant: Axcelis Technologies, Inc.

Inventor： Edward K. McIntyre ,  Edward J. Ladny ,  Nathaniel Robinson ,  William Davis Lee

IPC: G01R29/24 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683

Abstract: An electrostatic clamp monitoring system has an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface via one or more electrodes. A power supply electrically coupled to the electrostatic clamp is configured to selectively supply a clamping voltage to the one or more electrodes. A data acquisition system is coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current. A controller integrates the measured current over time, therein determining a charge value associated a clamping force between the workpiece and electrostatic clamp. A memory stores the charge value associated with the clamping force over a plurality of clamping cycles, therein defining a plurality of charge values, and the controller determines a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values.

公开(公告)号：US10041789B2

公开(公告)日：2018-08-07

申请号：US15281757

申请日：2016-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： John F. Baggett ,  Joseph Ferrara

IPC: G01B11/27 ,  G01N21/59 ,  G01N21/84 ,  H01L21/68

Abstract: A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. A first light receiver receives the first light beam. A rotation device rotates the workpiece support about a support axis. A second light emitter directs a second light beam toward a peripheral region of the workpiece. A second light receiver receives the second light beam concurrent with the rotation of the workpiece. A controller determines a transmissivity of the workpiece based on a total initial emittance of the first light beam a transmission of the first light beam through the workpiece. The controller determines a position of the workpiece with respect to the support axis based, at least in part, on a rotational position of the workpiece, a portion of the second light beam received, and the determined transmissivity.