Method of designing an alignment mark

    公开(公告)号:US12259664B2

    公开(公告)日:2025-03-25

    申请号:US17640899

    申请日:2020-08-17

    Inventor: Jigang Ma Hua Li

    Abstract: A method of configuring a mark having a trench to be etched into a substrate, the method including: obtaining a relation between an extent of height variation across a surface of a probationary layer deposited on a probationary trench of a probationary depth and a thickness of the probationary layer; determining an extent of height variation across the surface of a layer deposited on the mark allowing a metrology system to determine a position of the mark; and configuring the mark by determining a depth of the trench based on the relation, the extent of height variation and the thickness of a process layer to be deposited on the mark.

    Optical isolation module
    14.
    发明授权

    公开(公告)号:US12245350B2

    公开(公告)日:2025-03-04

    申请号:US18075589

    申请日:2022-12-06

    Abstract: An optical source for a photolithography tool includes a source configured to emit a first beam of light and a second beam of light, the first beam of light having a first wavelength, and the second beam of light having a second wavelength, the first and second wavelengths being different; an amplifier configured to amplify the first beam of light and the second beam of light to produce, respectively, a first amplified light beam and a second amplified light beam; and an optical isolator between the source and the amplifier, the optical isolator including: a plurality of dichroic optical elements, and an optical modulator between two of the dichroic optical elements.

    Apparatus using multiple charged particle beams

    公开(公告)号:US12243709B2

    公开(公告)日:2025-03-04

    申请号:US17373766

    申请日:2021-07-12

    Abstract: The present disclosure proposes an anti-rotation lens and using it as an anti-rotation condenser lens in a multi-beam apparatus with a pre-beamlet-forming mechanism. The anti-rotation condenser lens keeps rotation angles of beamlets unchanged when changing currents thereof, and thereby enabling the pre-beamlet-forming mechanism to cut off electrons not in use as much as possible. In this way, the multi-beam apparatus can observe a sample with high resolution and high throughput, and is competent as a yield management tool to inspect and/or review defects on wafers/masks in semiconductor manufacturing industry.

    Determining hot spot ranking based on wafer measurement

    公开(公告)号:US12242201B2

    公开(公告)日:2025-03-04

    申请号:US17276533

    申请日:2019-09-20

    Abstract: A method of hot spot ranking for a patterning process. The method includes obtaining (i) a set of hot spots of a patterning process, (ii) measured values of one or more parameters of the patterning process corresponding to the set of hot spots, and (ii) simulated values of the one or more parameters of the patterning process corresponding to the set of hot spots; determining a measurement feedback based on the measured values and the simulated values of the one or more parameters of the patterning process; and determining, via simulation of a process model of the patterning process, a ranking of a hot spot within the set of hot spots based on the measurement feedback.

    Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

    公开(公告)号:US12235096B2

    公开(公告)日:2025-02-25

    申请号:US18486811

    申请日:2023-10-13

    Abstract: A scatterometer for measuring a property of a target on a substrate includes a radiation source, a detector, and a processor. The radiation source produces a radiated spot on the target. The scatterometer adjusts a position of the radiated spot along a first direction across the target and along a second direction that is at an angle with respect to the first direction. The detector receives radiation scattered by the target. The received radiation is associated with positions of the radiated spot on the target along at least the first direction. The detector generates measurement signals based on the positions of the radiated spot on the target. The processor outputs, based on the measurement signals, a single value that is representative of the property of the target. The processor also combines the measurement signals to output a combined signal and derives, based on the combined signal, the single value.

    LITHOGRAPHIC APPARATUS, ILLUMINATION SYSTEM, AND CONNECTION SEALING DEVICE WITH PROTECTIVE SHIELD

    公开(公告)号:US20250060682A1

    公开(公告)日:2025-02-20

    申请号:US18724144

    申请日:2022-11-22

    Abstract: A lithographic apparatus includes an illumination system to illuminate a pattern of a patterning device and a projection system to project an image of the pattern onto a substrate. The illumination system includes a first and second enclosures, a scaling device, and a protective device. The first enclosure encloses a first environment and includes a first opening and first connection corresponding to the first opening. The second enclosure includes a second connection structure to couple to the first connection structure to prevent mixing of substances between the first environment and a second environment outside of the first and second enclosures. The sealing device is disposed between the first and second connection structures. The material of the sealing device is chemically reactive to the first environment. The protective device is disposed on the sealing device proximal to the first environment to shield the sealing device from the first environment.

    GENERATING AN ALIGNMENT SIGNAL WITHOUT DEDICATED ALIGNMENT STRUCTURES

    公开(公告)号:US20250060680A1

    公开(公告)日:2025-02-20

    申请号:US18721405

    申请日:2022-12-14

    Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.

Patent Agency Ranking