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公开(公告)号：US20210143194A1
公开(公告)日：2021-05-13
申请号：US16618343
申请日：2017-06-30
发明人： Xiaoxu KANG
IPC分类号： H01L27/146
摘要： The present disclosure relates to an image sensor structure and a manufacturing method thereof. A detection structure layer and a blind pixel structure layer are used. The detection structure layer and the blind pixel structure layer are effectively combined and further formed by ion implantation. Thus, the space ratio of a single pixel is reduced, the integration and device sensitivity are improved, and the blind pixel array and the pixel array are also in the same environment, thereby further improving the detection sensitivity and reducing the detection error.
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公开(公告)号：US20210091208A1
公开(公告)日：2021-03-25
申请号：US16771682
申请日：2018-08-29
发明人： Lei SONG
IPC分类号： H01L29/66 , H01L21/8234
摘要： The invention discloses a manufacturing method for FinFET device, comprises following steps: S01: providing an SOI substrate; S02: covering a middle part of the top silicon layer by using a barrier layer, and performing a silicon ion implantation on the top silicon layer, so that the buried insulator layer under the top silicon layer not covered by the barrier layer is converted into silicon-rich silicon dioxide, wherein in the top silicon layer, the part not covered by the barrier layer is called an implanted region, and the part covered by the barrier layer is called a non-implanted region; S03: removing the barrier layer, define a fin structure in the top silicon layer, the fin structure includes a channel and a source and drain, the source and drain are located on opposite sides of the channel; and the channel in the fin structure is located in the non-implanted region of the top silicon layer, the source and drain are located in the implanted region of the top silicon layer; removing the top silicon layer outside the fin structure; S04: removing the buried insulator layer under the channel in the fin structure to form a suspended channel; S05: forming a completely surrounded dielectric film and a gate in sequence around the suspended channel; S06: forming spacers and a source-drain doping in the structure.
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公开(公告)号：US10816406B2
公开(公告)日：2020-10-27
申请号：US16311060
申请日：2016-09-08
发明人： Xiaoxu Kang
IPC分类号： G01J5/38 , H01L41/29 , H01L41/312 , H01L41/113 , H01L41/047
摘要： The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.
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公开(公告)号：US10203898B2
公开(公告)日：2019-02-12
申请号：US15531415
申请日：2015-11-30
发明人： Dongmei Lei
摘要： A median filter device is provided with a reordered circuit, a comparison circuit and a data refresh circuit on the basis of the conventional data buffer circuit and data register circuit. The reorder circuit re-sorts the signal data stored in the data buffer circuit in a preceding clock cycle according to their numerical values. The comparison circuit compares the new signal datum entered in the current clock cycle with the signal data already stored to generate a median. The data refresh circuit updates the signal codes stored in the data register circuit with the signal codes corresponding to the new signal data, for calculation of the median in a following clock cycle. The length of the data buffer circuit and data register circuit can be reduced from N signal data to N−1 signal data, which achieves less data storage capacity, smaller circuit area, easier data processing and higher operation efficiency.
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公开(公告)号：US10008391B2
公开(公告)日：2018-06-26
申请号：US14759928
申请日：2014-08-11
发明人： Min Zhong
IPC分类号： H01L21/321 , H01L21/288 , H01L21/768
CPC分类号： H01L21/3212 , H01L21/2885 , H01L21/321 , H01L21/76802 , H01L21/7684 , H01L21/76846 , H01L21/76864 , H01L21/76867 , H01L21/76883
摘要： A method of forming copper interconnects includes: depositing a dielectric layer on a silicon wafer substrate; forming vias and/or trenches in the dielectric layer; next, depositing a barrier layer and a copper seed layer sequentially from bottom to up on the dielectric layer; depositing a copper layer on the copper seed layer, and performing an annealing process; then performing a multi-step polishing process to remove bulk coppers and stopping at the barrier layer; performing a planarization process to remove the barrier layer on the surface of the dielectric layer, a portion of the dielectric layer, and a portion of the copper in the vias and/or trenches to form the copper interconnects in the dielectric layer.
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16.发明授权公开(公告)号：US08919655B2
公开(公告)日：2014-12-30
申请号：US13884969
申请日：2011-03-14
申请人： Chen Li , Yong Wang , Shoumian Chen
发明人： Chen Li , Yong Wang , Shoumian Chen
IPC分类号： G06K19/02 , G06K19/077
CPC分类号： G06K19/07771 , G06K19/0775 , G06K19/07775
摘要： A radio frequency identification (RFID) device is disclosed. The RFID device includes a silicon substrate having a top side and a bottom side. The RFID device also includes a plurality of circuitry layers formed on the top side of the substrate, and the plurality of circuitry layers include at least a core circuitry and an on-chip antenna. Further, the RFID device includes a plurality of deep openings formed in the substrate on the bottom side under the plurality of circuitry layers. The plurality of deep openings are arranged in an array and through a substantial portion of the substrate, and a remaining portion of the substrate unreached by the plurality of deep openings separates the plurality of deep openings and the plurality of circuitry layers.
摘要翻译： 公开了射频识别（RFID）设备。 RFID装置包括具有顶侧和底侧的硅衬底。 RFID设备还包括形成在衬底的顶侧上的多个电路层，并且多个电路层至少包括核心电路和片上天线。 此外，RFID装置包括在多个电路层下方的底侧上的基板中形成的多个深开口。 多个深开口以阵列布置并且穿过基底的大部分，并且未被多个深开口未被接触的基底的剩余部分分离出多个深开口和多个电路层。
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公开(公告)号：US20240048138A1
公开(公告)日：2024-02-08
申请号：US17913145
申请日：2020-12-22
发明人： Xi ZENG , Pu ZHOU , Jianxian WEN , Huijie YAN , Xiameng LIAN
IPC分类号： H03K17/22
CPC分类号： H03K17/22
摘要： The present invention provides a clock circuit comprises an oscillator circuit and a power-on reset circuit, the oscillator circuit comprises a current generating module and a loop oscillation module connected together; the current generating module is used for outputting a control current to the loop oscillation module; the loop oscillation module is used for outputting an oscillation signal with a set frequency under action of the control current; and the power-on reset circuit is used for providing an enabling control signal to the loop oscillation module after a power supply is powered on; the power-on reset circuit is connected to the loop oscillation module. In the present invention, the power-on reset circuit is only connected with the loop oscillation module, thus during a power-on process of the power supply, all nodes of the current generating module are gradually set with power-on of the power supply, thus a circuit setting time of the current generating module are comprised in a time for releasing an enable control signal of the power-on reset circuit, so as to accelerate a settling time of the oscillator circuit.
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公开(公告)号：US20220399237A1
公开(公告)日：2022-12-15
申请号：US17776637
申请日：2020-07-23
发明人： Xueru YU , Hongxia SUN , Chen LI , Pengfei WANG , Jiebin DUAN , Xiucui WANG , Hao FU , Tao ZHOU , Yan YAN , Bowen XU , Lingyi GUO , Liren LI
IPC分类号： H01L21/66
摘要： The present invention disclosures a critical dimension error analysis method, comprising: S01: performing lithography processes on a wafer, measuring the critical dimension (CD) values of the test points in each of the fields respectively; M and N are integers greater than 1; S02: removing extreme outliers from the critical dimension (CD) values; S03: rebuilding remaining CD values by a reconstruction model fitting method, and obtaining rebuilt critical dimension (CD″) values, according to relative error between CD″ and CD, dividing the rebuilt critical dimension (CD″) values into scenes and the number of the scenes is A; S04: calculating components and corresponding residuals of the test points in each of the scenes under a reference system corresponding to a correction model by parameter estimation; S05: modifying machine parameters and masks by the correction model according to above calculation results. The present invention uses an outer limit to remove extreme outliers, so as to analyze a critical dimension error during a lithography process quickly and accurately.
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公开(公告)号：US11276717B2
公开(公告)日：2022-03-15
申请号：US16486153
申请日：2017-06-06
发明人： Yong Wang
IPC分类号： H01L27/146
摘要： The present disclosure refers to a multispectral image sensor and a manufacturing method thereof. The multispectral image sensor comprises a front-end structure used for photoelectric conversion and processing, and a pixel layer provided on the front-end structure. The pixel layer comprises N pixel units, and N≥4, the pixel units are arranged in a plurality of arrays, a photosensitive wavelength of each pixel unit in each array is different. Whereby, multispectrals can be detected simultaneously, and therefore the efficiency is improved, costs are reduced, and miniaturization is achieved.
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公开(公告)号：US11102380B2
公开(公告)日：2021-08-24
申请号：US17043775
申请日：2018-08-29
发明人： Xi Zeng , Jianxin Wen , Yuqi Jin , Ying Luo
IPC分类号： H04N5/374 , H04N5/341 , H04N5/235 , H04N5/228 , H04N5/232 , H04N5/353 , H04N19/50 , H03M1/12 , G06T7/20 , G06T3/40 , H04N5/14 , H04N5/3745
摘要： The present invention discloses a motion detection circuit applied to CIS and a motion detection method. Through the current frame pixel signal sampling branch and the previous frame pixel signal sampling branch, the sampling of the current frame and the previous frame pixel signal is respectively controlled, and the previous frame pixel signal is transmitted to the first end of the first capacitor and the second capacitor connected in series, and then the first error reference signal and the second error reference signal related to the pixel signal of the previous frame, which are respectively output by the second ends of the first capacitor and the second capacitor that are not connected, are transmitted to the first comparator branch and the second comparator branch of the comparator branch respectively, by judging the high and low-state of the comparison signals of the current frame pixel signal and the first error reference signal, and the current frame pixel signal and the second error reference signal respectively output by the first comparator branch and the second comparator branch, so as to determine whether an image point reflected by the pixel points of the pixels connected with the motion detection circuit has moved or not.
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