Abstract:
A night vision system for a vehicle includes a pulsed light source for illuminating a region proximate the vehicle and a secondary trigger light source operating at a predetermined pulse timing and second wavelength. A light sensor detects light at the second wavelength. The trigger light pulses are used to indicate the pulse timing of each respective vehicle's primary NIR light source. Upon detecting another vehicle's trigger light source, the controller adjusts the pulse phase of the first light source to be exactly out-of-phase with that of the oncoming vehicle since the pulsed timing of the oncoming vehicle's NIR light source is known upon detection of the opposing vehicle's trigger light source. Each vehicle can then adjust its primary light source to be out-of-phase with the other vehicle and, hence, non-interfering.
Abstract:
An electrically powered image intensifier having an output and an input is optically coupled to the lens to receive the focused light image from the lens and provide at the output of the image intensifier an intensified light image. A chassis is configured to support the intensifier and to mainly engage the lens by engaging the mounting structure. The lens is engaged by the mounting structure in a use position. A power source is coupled to the image intensifier by an electrical switch having an open and a closed state. The switch is connected to couple electrical power from the power source to the image intensifier in the closed state and to decouple electrical power from the power source from the image intensifier in the open state. The electrical switch comprises an operator for configuring the electrical switch in the open state in an open operator position or in a closed state in a closed operator position. The operator is biased in the open operator position. The operator is urged in the use position into the closed operator position by the mounting structure.
Abstract:
A substrate processing apparatus includes a processing chamber which processes a substrate; a substrate supporting body which supports the substrate in the processing chamber; a heating member which heats the substrate and which is disposed on an opposite side from the substrate with respect to the substrate supporting body; a substrate temperature detecting device provided at a position opposed to a surface of the substrate; and a light-shielding member which shields stray light from the heating member and which is disposed around the substrate, wherein the light-shielding member has quartz members and an opaque member sandwiched between the quartz members.
Abstract:
A readout circuit for an array of substrate-isolated microbolometer detectors includes a bias source that varies in accordance with changes in substrate temperature as detected by a temperature sensor that has temperature characteristic that resembles the temperature characteristic of the microbolometer detector array so as compensate detector measurements for temperature induced errors in the microbolometer focal plane array read out.
Abstract:
An infrared sensor of this invention is characterized by including a support member including a support film and a substrate that supports the support film, a polysilicon film which ranges from above a concavity to above the substrate, SiO2 which is formed on the polysilicon film and has a first junction hole above the concavity and a second junction hole above the substrate, an aluminum film which is connected to the polysilicon film through the first junction hole and connected to an adjacent polysilicon film through the second junction hole, and a heat absorption layer formed above the concavity to cover a portion above the first junction hole, wherein the aluminum film is stacked on the corresponding polysilicon film via the SiO2 above the concavity.
Abstract:
Method and apparatus are provided for visibly outlining the energy zone to be measured by a radiometer. The method comprises the steps of providing a laser sighting device on the radiometer adapted to emit more than two laser beams against a surface whose temperature is to be measured and positioning said laser beams about the energy zone to outline said energy zone. The apparatus comprises a laser sighting device adapted to emit more than two laser beams against the surface and means to position said laser beams about the energy zone to outline said energy zone. The laser beams may be rotated about the periphery of the energy zone. The laser beams may be rotated about the periphery of the energy zone. In another embodiment, a pair of laser beams are projected on opposite sides of the energy zone. The laser beams may be further pulsed on and off in a synchronized manner so as to cause a series of intermittent lines to outline the energy zone. Such an embodiment improves the efficiency of the laser and results in brighter laser beams being projected. In yet another embodiment, a primary laser beam is passed through or over a beam splitter or a diffraction grating so as to be formed into a plurality of secondary beams which form, where they strike the target, a pattern which defines an energy zone area of the target to be investigated with the radiometer. Two or more embodiments may be used together. A diffraction device such as a grating may be used to form multiple beams. In a further embodiment, additionally laser beams are directed axially so as to illuminate the center or a central are of the energy zone.
Abstract:
The detector includes a thin-film resistive component (3), at least two first electrical contacts (6, 7) electrically connected to the resistive component (3) that provide for biasing and signal readout, at least one second electrical contact (1) electrically connected to the resistive component (3) that provides bias control, an integral infra-red absorption means (4, 5) and thermal isolation means (10, 11). The detector may further include a readout integrated microcircuit (RIOC).
Abstract:
Photoconductive devices (1,2) comprising MgxZn1-xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.
Abstract:
An optical sensor package capable of being surface mounted, and in a form that enables multiple packages to be fabricated simultaneously and then array tested in a wafer stack prior to singulation. The package comprises a chip carrier, a device chip electrically and mechanically connected to a first surface of the chip carrier with solder connections, and a capping chip secured to the chip carrier to hermetically enclose the device chip. The device chip has an optical sensing element on a surface thereof, while the capping chip has means for enabling radiation to pass therethrough to the device chip. The chip carrier includes conductive vias that are electrically connected to the solder connections of the device chip and extend through the chip carrier to bond pads on a second surface of the chip carrier, enabling the package to be surface mounted with solder connections to a suitable substrate.
Abstract:
An infrared radiation detecting device is constructed using a manufacturing method to increase the infrared radiation absorptance of the infrared radiation absorbing film. The infrared radiation detecting device has an infrared radiation absorbing film. In one embodiment, the infrared radiation absorbing film has a varying film thickness. The film thickness difference between the thickest points and the thinnest points and the spacing between the thickest points within the same plane are set to decrease the effective surface reflectance cause by the interference or scattering effects of the infrared radiation. Preferably, the film thickness differences between the thickest points and the thinnest points are equal to or greater than null of the wavelength of the infrared radiation being measured, and the spacing between the thickest points within the same plane is shorter than the wavelength of the infrared radiation being measured.