公开(公告)号：US20160379973A1

公开(公告)日：2016-12-29

申请号：US15259243

申请日：2016-09-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092 ,  B06B1/02 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L23/528

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

Abstract translation: 还描述了形成在互补金属氧化物半导体（CMOS）晶片中的微加工超声换能器，以及制造这种器件的方法。 可以通过牺牲释放去除CMOS晶片的金属化层，以产生超声换能器的空腔。 剩余的层可以形成超声换能器的膜。

公开(公告)号：US09499395B2

公开(公告)日：2016-11-22

申请号：US15042931

申请日：2016-02-12

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B06B1/02 ,  H01L29/84 ,  B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

公开(公告)号：US09327142B2

公开(公告)日：2016-05-03

申请号：US14561328

申请日：2014-12-05

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: A61N7/02 ,  A61B8/00 ,  A61B8/14 ,  A61N7/00 ,  G01S15/02 ,  G01S15/89 ,  H04R1/00 ,  B81C1/00 ,  G01S7/52 ,  B06B1/02 ,  A61B8/08

CPC classification number: A61B8/4494 ,  A61B8/14 ,  A61B8/145 ,  A61B8/4483 ,  A61B8/4488 ,  A61B8/485 ,  A61B8/54 ,  A61N7/00 ,  A61N7/02 ,  B06B1/02 ,  B81C1/00246 ,  G01S7/52019 ,  G01S7/52034 ,  G01S7/52047 ,  G01S7/5208 ,  G01S15/02 ,  G01S15/8915 ,  G01S15/8977 ,  H04R1/00 ,  Y10T29/41

Abstract: To implement a single-chip ultrasonic imaging solution, on-chip signal processing may be employed in the receive signal path to reduce data bandwidth and a high-speed serial data module may be used to move data for all received channels off-chip as digital data stream. The digitization of received signals on-chip allows advanced digital signal processing to be performed on-chip, and thus permits the full integration of an entire ultrasonic imaging system on a single semiconductor substrate. Various novel waveform generation techniques, transducer configuration and biasing methodologies, etc., are likewise disclosed. HIFU methods may additionally or alternatively be employed as a component of the “ultrasound-on-a-chip” solution disclosed herein.

Abstract translation: 为了实现单芯片超声成像解决方案，可以在接收信号路径中采用片上信号处理以减少数据带宽，并且可以使用高速串行数据模块来将数据作为数字的片外移动数据 数据流。 片上接收信号的数字化允许在芯片上执行高级数字信号处理，从而允许整个超声波成像系统完全集成在单个半导体衬底上。 同样公开了各种新颖的波形产生技术，换能器配置和偏置方法等。 HIFU方法可以额外地或替代地用作本文公开的“片上超声”解决方案的组件。

公开(公告)号：US20160069989A1

公开(公告)日：2016-03-10

申请号：US14940837

申请日：2015-11-13

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Tyler S. Ralston ,  Nevada J. Sanchez ,  Andrew J. Casper

IPC: G01S7/52 ,  H03K5/13

CPC classification number: G01S7/52019 ,  B06B1/0292 ,  B06B1/0607 ,  G01S7/52017 ,  G01S7/5202 ,  G10K11/346 ,  H03K5/13 ,  H03K2005/00019

Abstract: Aspects of the technology described herein relate to ultrasound device circuitry as may form part of a single substrate ultrasound device having integrated ultrasonic transducers. The ultrasound device circuitry may facilitate the generation of ultrasound waveforms in a manner that is power- and data-efficient.

Abstract translation: 本文描述的技术的方面涉及超声装置电路，其可以形成具有集成的超声换能器的单个衬底超声装置的一部分。 超声波装置电路可以以功率和数据效率的方式促进产生超声波形。

公开(公告)号：US20160009544A1

公开(公告)日：2016-01-14

申请号：US14799484

申请日：2015-07-14

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: B81B3/00 ,  H01L23/00 ,  H01L21/78 ,  B81C1/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20150301165A1

公开(公告)日：2015-10-22

申请号：US14689090

申请日：2015-04-17

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Tyler S. Ralston ,  Nevada J. Sanchez ,  Andrew J. Casper

IPC: G01S7/52 ,  H03K5/13

CPC classification number: G01S7/52019 ,  B06B1/0292 ,  B06B1/0607 ,  G01S7/52017 ,  G01S7/5202 ,  G10K11/346 ,  H03K5/13 ,  H03K2005/00019

Abstract: Aspects of the technology described herein relate to ultrasound device circuitry as may form part of a single substrate ultrasound device having integrated ultrasonic transducers. The ultrasound device circuitry may facilitate the generation of ultrasound waveforms in a manner that is power- and data-efficient.

Abstract translation: 本文描述的技术的方面涉及超声装置电路，其可以形成具有集成的超声换能器的单个衬底超声装置的一部分。 超声波装置电路可以以功率和数据效率的方式促进产生超声波形。

公开(公告)号：US20150298170A1

公开(公告)日：2015-10-22

申请号：US14689119

申请日：2015-04-17

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: B06B1/02 ,  B81B7/00 ,  H01L21/8238 ,  H01L21/768 ,  B81B3/00 ,  H01L21/56 ,  H01L23/528 ,  B81C1/00 ,  H01L23/522 ,  H01L27/06 ,  H01L21/3213

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

Abstract translation: 还描述了形成在互补金属氧化物半导体（CMOS）晶片中的微加工超声换能器，以及制造这种器件的方法。 可以通过牺牲释放去除CMOS晶片的金属化层，以产生超声换能器的空腔。 剩余的层可以形成超声换能器的膜。

公开(公告)号：US20140264660A1

公开(公告)日：2014-09-18

申请号：US14208351

申请日：2014-03-13

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: B06B1/02

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

Abstract translation: 描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。

公开(公告)号：US20140219062A1

公开(公告)日：2014-08-07

申请号：US14172840

申请日：2014-02-04

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: G10K11/18

CPC classification number: B06B1/0292 ,  B06B1/02 ,  B81B3/0021 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00158 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0735 ,  B81C2203/0771 ,  G10K9/12 ,  G10K11/18

Abstract: CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.

Abstract translation: 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。

公开(公告)号：US20140180097A1

公开(公告)日：2014-06-26

申请号：US14191614

申请日：2014-02-27

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Nevada J. Sanchez ,  Gregory L. Charvat ,  Tyler S. Ralston

IPC: A61B8/08

CPC classification number: A61B5/015 ,  A61B8/08 ,  A61B8/13 ,  A61B8/4209 ,  A61B8/4245 ,  A61B8/4254 ,  A61B8/4263 ,  A61B8/4477 ,  A61B8/4488 ,  A61B8/4494 ,  A61B8/483 ,  A61B8/5207 ,  A61B8/56 ,  A61B8/565 ,  A61B2017/320069 ,  A61B2090/378 ,  A61B2562/164 ,  A61N7/00 ,  A61N7/02 ,  A61N2007/0078

Abstract: Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.

Abstract translation: 描述了包括超声成像装置的装置和方法，其可以在透射超声成像模式中操作，并且其可以用于检测对象的感兴趣的属性，例如折射率，密度和/或声速。 还描述了适用于执行高强度聚焦超声（HIFU）的设备，以及HIFU和超声成像。