公开(公告)号：US08344719B2

公开(公告)日：2013-01-01

申请号：US12686579

申请日：2010-01-13

Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Shuhei Nagatsuka ,  Koichiro Kamata ,  Tsutomu Murakawa ,  Takahiro Tuji ,  Kaori Ikada

IPC: G05F3/16 ,  G05F1/00

Abstract: One object of the present invention is to provide a regulator circuit with an improved noise margin. In a regulator circuit including a bias circuit generating a reference voltage on the basis of the potential difference between a first power supply terminal and a second power supply terminal, and a voltage regulator outputting a potential to an output terminal on the basis of a reference potential input from the bias circuit, a bypass capacitor is provided between a power supply terminal and a node to which a gate of a transistor included in the bias circuit is connected.

公开(公告)号：US08320162B2

公开(公告)日：2012-11-27

申请号：US13022407

申请日：2011-02-07

Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

IPC: G11C11/24

CPC classification number: G11C11/24 ,  G11C11/403 ,  G11C11/405 ,  H01L27/1052 ,  H01L27/11521 ,  H01L27/1225

Abstract: An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.

Abstract translation: 目的在于提供具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且写入的次数不受限制。 半导体器件使用宽间隙半导体形成，并且包括电位改变电路，其选择性地将与位线的电位等于或不同的电位施加到源极线。 因此，可以充分降低半导体器件的功耗。

公开(公告)号：US20120295112A1

公开(公告)日：2012-11-22

申请号：US13465296

申请日：2012-05-07

Applicant: Makoto Sasaki ,  Hiroki Inoue

Inventor： Makoto Sasaki ,  Hiroki Inoue

IPC: C01B31/36 ,  B32B5/16

CPC classification number: C30B29/36 ,  C01B32/956 ,  C01P2004/60 ,  C01P2004/61 ,  C01P2006/80 ,  C30B35/007 ,  Y10T428/2982

Abstract: There are provided a silicon carbide powder for silicon carbide crystal growth and a method for producing the silicon carbide powder. The silicon carbide powder is formed by heating a mixture of a silicon small piece and a carbon powder and thereafter pulverizing the mixture, and is substantially composed of silicon carbide.

Abstract translation: 提供碳化硅晶体生长用碳化硅粉末和碳化硅粉末的制造方法。 碳化硅粉末通过加热硅小块和碳粉末的混合物形成，然后粉碎混合物，并且基本上由碳化硅组成。

公开(公告)号：US08223375B2

公开(公告)日：2012-07-17

申请号：US12637185

申请日：2009-12-14

Applicant: Daisuke Kido ,  Hiroki Inoue

Inventor： Daisuke Kido ,  Hiroki Inoue

IPC: G06F3/12

CPC classification number: G07C9/00103 ,  G07C11/00

Abstract: In a reception management apparatus, when a print button is operated after scheduled visitor information is selected, a badge ID representing print number is assigned to the selected scheduled visitor information and thereby print data of an entry pass associated with the scheduled visitor information is created and output to a printer. At the same time, the badge ID is assigned to and displayed in the scheduled visitor information in the appointment list display window. Further, when a shared button is operated after the scheduled visitor information is selected, the badge ID representing print number is assigned to the selected scheduled visitor information and thereby print data of the entry pass associated with the scheduled visitor information is created and output to the printer. At the same time, the personal information corresponding to the scheduled visitor information is stored in the entry-permitted list as entry-permitted visitor information.

Abstract translation: 在接收管理装置中，当选择了预约的访问者信息之后，当打印按钮被操作时，将表示打印编号的标识ID分配给所选择的预定访问者信息，从而创建与调度的访问者信息相关联的入口传递的数据， 输出到打印机。 同时，在约会列表显示窗口中分配到并显示在预定访问者信息中的徽章ID。 此外，当在所选择的预定访问者信息被选择之后操作共享按钮时，将表示打印编号的标识ID分配给所选择的预定访问者信息，从而创建与所调度的访问者信息相关联的入口传递的打印数据并将其输出到 打印机。 同时，将与预约的访问者信息相对应的个人信息作为入场许可访问者信息存储在入口许可列表中。

公开(公告)号：US20120161157A1

公开(公告)日：2012-06-28

申请号：US13393235

申请日：2010-09-28

Applicant: Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

Inventor： Hiroki Inoue ,  Shin Harada ,  Makoto Sasaki ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC: H01L29/161

CPC classification number: H01L29/7802 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L29/1608 ,  H01L29/66068

Abstract: A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers.

Abstract translation: 即使当由不同于碳化硅的材料制成的不同类型的材料层时也能实现约束翘曲的碳化硅衬底包括：由碳化硅制成的基底层; 以及在平面图中观察时，在基底层上并排设置的多个SiC层，并且均由单晶碳化硅构成。 在相邻SiC层的端面之间形成间隙。

公开(公告)号：US20120126251A1

公开(公告)日：2012-05-24

申请号：US13388691

申请日：2011-02-25

Applicant: Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

Inventor： Makoto Sasaki ,  Shin Harada ,  Takeyoshi Masuda ,  Keiji Wada ,  Hiroki Inoue ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa ,  Taku Horii

IPC: H01L29/24 ,  H01L21/04

CPC classification number: H01L29/7802 ,  H01L21/2007 ,  H01L21/3247 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

Abstract: A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate.

Abstract translation: 制造碳化硅衬底的方法降低了制造成本。 该方法包括以下步骤：制备基底和SiC衬底; 通过堆叠基底基板和SiC基板来制造堆叠的基板; 通过加热堆叠的基板来制造连接的基板; 通过加热连接的基板，在连接的基板的厚度方向上形成在连接界面处形成的空隙，使得基底基板的温度高于SiC基板的温度; 并且通过去除包括与SiC衬底相对的基底衬底的主表面的区域来去除空隙。

公开(公告)号：US20120112209A1

公开(公告)日：2012-05-10

申请号：US13382374

申请日：2011-02-25

Applicant: Taro Nishiguchi ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki

Inventor： Taro Nishiguchi ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki

IPC: H01L29/24 ,  H01L21/20 ,  H01L21/30

CPC classification number: H01L29/7802 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/66068

Abstract: A method of fabricating a silicon carbide substrate that can reduce the fabrication cost of a semiconductor device employing the silicon carbide substrate includes the steps of: preparing a SiC substrate made of single crystal silicon carbide; arranging a base substrate in a vessel so as to face one main face of the SiC substrate; forming a base layer made of silicon carbide so as to contact one main face of the SiC substrate by heating a base substrate to a temperature range greater than or equal to a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming a base layer, a silicon generation source made of a substance including silicon is arranged in the vessel, in addition to the SiC substrate and the base substrate.

Abstract translation: 制造可以降低采用碳化硅衬底的半导体器件的制造成本的碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板布置在容器中以面对SiC衬底的一个主面; 形成由碳化硅制成的基层，以便通过将基底基板加热到大于或等于构成基底基板的碳化硅的升华温度的温度范围来与SiC基板的一个主面接触。 在形成基底层的步骤中，除了SiC基板和基底基板之外，还在容器中配置由包含硅的物质构成的硅生成源。

公开(公告)号：US20120012845A1

公开(公告)日：2012-01-19

申请号：US13182488

申请日：2011-07-14

Applicant: Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka ,  Hiroki Inoue

Inventor： Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka ,  Hiroki Inoue

IPC: H01L27/108

CPC classification number: H01L27/11517 ,  G11C16/0433 ,  G11C16/26 ,  H01L27/1156 ,  H01L29/78

Abstract: A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably.

Abstract translation: 提供具有新颖结构的半导体器件，其即使在没有供电的情况下也可以保存存储的数据，并且对写入操作的数量没有限制。 使用能够显着降低晶体管的截止电流的材料形成半导体器件; 例如，作为宽间隙半导体的氧化物半导体材料。 通过使用能够显着降低晶体管的截止电流的半导体材料，半导体器件可以长期保存数据。 在具有存储单元阵列的半导体器件中，在串联连接的第一至第m存储器单元的节点中产生的寄生电容基本相等，由此半导体器件可以稳定地工作。

公开(公告)号：US08092407B2

公开(公告)日：2012-01-10

申请号：US11577158

申请日：2005-10-13

Applicant: Daisuke Tsukada ,  Motoharu Muto ,  Satoshi Kajiyama ,  Hiroki Inoue ,  Masayuki Suzuki

Inventor： Daisuke Tsukada ,  Motoharu Muto ,  Satoshi Kajiyama ,  Hiroki Inoue ,  Masayuki Suzuki

IPC: A61H15/00

CPC classification number: A61H15/0078 ,  A61H2015/0014 ,  A61H2201/0149 ,  A61H2201/50 ,  A61H2203/0431 ,  A61H2205/04 ,  A61H2205/062 ,  A61H2205/081

Abstract: A massage machine using a small size and high torque brushless DC motor includes a driving unit moved up and down along guide rails of a chair and a first motor for moving the driving unit up and down. A pair of treatment head bases are driven reciprocally in opposite directions to each other; and a second motor reciprocally drives the treatment head bases in opposite directions to each other. Treatment heads are respectively supported by the treatment head bases; and a third motor drives the treatment heads in a plane substantially perpendicular to a backrest. A control circuit drives the respective motors respectively independently of one another. Each motor is a brushless motor. A control circuit corrects, corresponding to a load imposed on the brushless DC motor, a waveform of a drive signal applied to a winding of the brushless DC motor so as to allow a current flowing through the winding of the brushless DC motor to have a substantially sinusoidal waveform making it possible to reduce discomfort due to motor noise, and to accurately control the motor rotation speed.

Abstract translation: 使用小型和高扭矩无刷直流电动机的按摩机包括沿着椅子的导轨上下移动的驱动单元和用于上下移动驱动单元的第一电动机。 一对处理头基座彼此相反地相互驱动; 并且第二马达以相反方向相互驱动治疗头基部。 治疗头分别由治疗头座支撑; 并且第三马达在大致垂直于靠背的平面中驱动治疗头。 控制电路分别独立地驱动各个电动机。 每个电机都是无刷电机。 控制电路对应于施加在无刷直流电动机上的负载校正施加到无刷直流电动机的绕组的驱动信号的波形，以使流过无刷直流电动机的绕组的电流具有基本上 正弦波形使得可以减少由于电动机噪声引起的不适，并且能够精确地控制电动机的转速。

公开(公告)号：US20110278595A1

公开(公告)日：2011-11-17

申请号：US13104275

申请日：2011-05-10

Applicant: Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

Inventor： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC: H01L29/24 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC classification number: H01L29/7802 ,  B32B9/00 ,  B32B13/04 ,  B32B2307/202 ,  B32B2307/732 ,  B32B2457/14 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/046 ,  H01L21/049 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

Abstract: A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container.

Abstract translation: 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 通过将所述SiC衬底放置在所述基底衬底的主表面上并与之接触来制造堆叠衬底; 以及通过在容器中加热所述堆叠的基板而将所述基底基板和所述SiC基板彼此连接，以落入构成所述基底基板的碳化硅的升华温度以上的温度范围内。 在连接所述基底衬底和所述SiC衬底的步骤中，将由碳化硅制成并且与所述基底衬底和所述SiC衬底不同的碳化硅体设置在所述容器中。