公开(公告)号：US20190081197A1

公开(公告)日：2019-03-14

申请号：US15878793

申请日：2018-01-24

Applicant: TYNTEK CORPORATION ,  NATIONAL CHIAO TUNG UNIVERSITY

Inventor： RAY-HUA HORNG ,  YEN-CHU LI ,  CHUN-YI TUNG ,  SI-HAN TSAI ,  LI-CHUNG CHENG

IPC: H01L31/18 ,  H01L31/032 ,  C30B29/26 ,  C30B25/18

Abstract: The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.

公开(公告)号：US20190074392A1

公开(公告)日：2019-03-07

申请号：US16122634

申请日：2018-09-05

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun-Tak KIM ,  Jin Cheol CHO ,  Tetiana SLUSAR

IPC: H01L31/032 ,  H01L27/144 ,  H01L31/18

Abstract: Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×1015 cm−3 and lower than 1.0×1019 cm−3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.

公开(公告)号：US10211351B2

公开(公告)日：2019-02-19

申请号：US16034131

申请日：2018-07-12

Applicant: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.

Inventor： John Corson ,  Alex Austin ,  Robert Tas ,  Neil Mackie ,  Mats Larsson ,  Korhan Demirkan ,  Weijie Zhang ,  Jochen Titus ,  Swati Sevanna ,  Robert Zubeck ,  Randy Dorn ,  Asit Rairkar ,  Ron Rulkens ,  Ajay Saproo ,  Dan Vitkavage

IPC: H01L31/032 ,  H01L31/0392 ,  H01L31/0749 ,  H01L31/0224

Abstract: A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

公开(公告)号：US10186621B2

公开(公告)日：2019-01-22

申请号：US15026465

申请日：2014-09-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Myoung Seok Sung

IPC: H01L31/032 ,  H01L31/046 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/0463

Abstract: The present disclosure provides a solar cell device comprising; a support substrate; a rear electrode layer on the substrate; a light absorption layer on the rear electrode layer; a front electrode layer on the light absorption layer; and wherein a first through-hole is defined in the rear electrode layer; wherein at least one protrusion is formed on an exposed top face of the substrate via the first through-hole.

公开(公告)号：US20190020301A1

公开(公告)日：2019-01-17

申请号：US16034299

申请日：2018-07-12

Applicant: Tesla, Inc.

Inventor： Daniel Preston Flanigan ,  Alex Christopher Mayer

IPC: H02S20/25 ,  H01L31/048 ,  H01L31/18 ,  H01L31/046 ,  H01L31/032

Abstract: A solar tile and method for manufacturing solar tiles as a roofing surface with improved aesthetics that reduce the visual differences between solar and non-solar portions of tile. Roof tiles include an active area of thin-film photovoltaic material and an inactive area of thin-film photovoltaic material.

公开(公告)号：US10175110B2

公开(公告)日：2019-01-08

申请号：US15554006

申请日：2016-05-13

Applicant: Hojun Yoon ,  Taek Kim

Inventor： Taek Kim

IPC: G01J3/28 ,  H04N5/225 ,  G01J3/02 ,  G01J3/10 ,  H04N5/232 ,  G01J3/12 ,  H01L31/147 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/032 ,  H04N5/268

Abstract: A hyperspectral camera apparatus is disclosed. The disclosed hyperspectral camera includes a plurality of semiconductor light sources to illuminate the subject with different wavelengths of light, an image sensor to acquire the image of the subject illuminated by the semiconductor light sources, and at least one optical filter provided in front of the image sensor to selectively transmit particular wavelengths of light onto the sensor.

公开(公告)号：US10173919B2

公开(公告)日：2019-01-08

申请号：US15651654

申请日：2017-07-17

Applicant: Corsam Technologies LLC

Inventor： Bruce Gardiner Aitken ,  James Edward Dickinson, Jr. ,  Timothy J. Kiczenski ,  Michelle Diane Pierson-Stull

IPC: B32B17/00 ,  C03C3/064 ,  C03C3/078 ,  C03C3/089 ,  C03C3/091 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/048

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ≥540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

公开(公告)号：US20190006605A1

公开(公告)日：2019-01-03

申请号：US16100661

申请日：2018-08-10

Applicant: OHIO STATE INNOVATION FOUNDATION

Inventor： Joshua Goldberger ,  Shishi Jiang ,  Elisabeth Bianco

IPC: H01L51/00 ,  H01L31/0352 ,  H01L33/04 ,  C01B6/06 ,  H01L33/26 ,  H01L31/032 ,  C07F7/22 ,  C07F7/30 ,  H01L29/06 ,  H01L29/24 ,  B82Y40/00 ,  B82Y30/00 ,  C01G17/00 ,  C01G19/00 ,  H01L51/05 ,  H01L51/42 ,  H01L51/50 ,  B82Y20/00

Abstract: The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.

公开(公告)号：US20190003998A1

公开(公告)日：2019-01-03

申请号：US16023630

申请日：2018-06-29

Applicant: University of Pittsburgh - Of the Commonwealth System of Higher Education

Inventor： James Edward Ellis ,  Alexander Star

IPC: G01N27/12 ,  H01L31/032 ,  H01L31/113 ,  G01N27/414 ,  G01N33/00

CPC classification number: G01N27/125 ,  G01N27/127 ,  G01N27/4141 ,  G01N27/4146 ,  G01N33/0036 ,  G01N33/004 ,  H01L31/0324 ,  H01L31/113

Abstract: A sensor includes a substrate, a first electrode, a second electrode spaced from the first electrode, and a sensing medium on the substrate between the first electrode and the second electrode. The sensor medium includes a functionalized graphitic material and an uncondensed graphitic carbon nitride disposed upon the functionalized graphitic material. The sensor further includes a system for applying electromagnetic energy to the sensing medium to increase the conductance of the sensing medium, and circuitry including at least one measurement system in operative connection with the sensor to measure a variable relatable to the conductance of the sensing medium which is dependent upon the presence of an analyte to be detected.

公开(公告)号：US10170653B2

公开(公告)日：2019-01-01

申请号：US15807919

申请日：2017-11-09

Applicant: L3 CINCINNATI ELECTRONICS CORPORATION

Inventor： Yajun Wei

IPC: H01L31/0352 ,  H01L31/0224 ,  H01L31/101 ,  H01L31/0304 ,  H01L31/109 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

Abstract: Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.