公开(公告)号：US07453097B2

公开(公告)日：2008-11-18

申请号：US11100376

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC: H01L33/00 ,  H01L51/50

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/18

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.

Abstract translation: 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括在衬底上的第一导电层，第一导电层上的多个纳米线，每个纳米线具有p型掺杂部分和两端的n型掺杂部分， p型掺杂部分和n型掺杂部分，以及形成在纳米线上的第二导电层。 掺杂部分通过在其圆周附近吸附分子而形成。

公开(公告)号：US20080132016A1

公开(公告)日：2008-06-05

申请号：US11753363

申请日：2007-05-24

Applicant: Sung Hoon LEE

Inventor： Sung Hoon LEE

IPC: H01L21/336

CPC classification number: H01L27/115 ,  H01L29/66825 ,  H01L29/7881

Abstract: In a method of fabricating a flash memory device, a semiconductor substrate includes a tunnel insulating layer and a charge storage layer formed in an active region and a trench formed in an isolation region. A first insulating layer is formed to fill a part of the trench. A second insulating layer is formed on the first insulating layer so that the trench is filled. The first and second insulating layers are removed such that the first and second insulating layers remain on sidewalls of the charge storage layer and on a part of the trench. A third insulating layer is formed on the first and second insulating layers so that a space defined by the charge storage layer is filled. The third insulating layer is removed so that a height of the third insulating layer is lowered.

Abstract translation: 在制造闪速存储器件的方法中，半导体衬底包括隧道绝缘层和形成在有源区中的电荷存储层和形成在隔离区中的沟槽。 形成第一绝缘层以填充沟槽的一部分。 在第一绝缘层上形成第二绝缘层，以便填充沟槽。 去除第一和第二绝缘层，使得第一和第二绝缘层保留在电荷存储层的侧壁和沟槽的一部分上。 在第一和第二绝缘层上形成第三绝缘层，从而填充由电荷存储层限定的空间。 去除第三绝缘层，使得第三绝缘层的高度降低。

公开(公告)号：US20070032076A1

公开(公告)日：2007-02-08

申请号：US11406255

申请日：2006-04-19

Applicant: Hyo-sug Lee ,  Sung-hoon Lee ,  Young-gu Jin ,  Jong-seob Kim ,  Sung-il Park

Inventor： Hyo-sug Lee ,  Sung-hoon Lee ,  Young-gu Jin ,  Jong-seob Kim ,  Sung-il Park

IPC: H01L21/44

CPC classification number: H01L33/20 ,  H01L33/08

Abstract: A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.

Abstract translation: 具有允许在纳米线中形成p型和n型掺杂部分的结构的纳米线器件及其制造方法。 纳米线装置包括基板，形成在基板上的第一电极层，与第一电极层相对的第二电极层，在第一电极层和第二电极层之间以规定间隔插入的多个纳米线， 以及含有在纳米线之间填充空间的电解质盐的电解质。

公开(公告)号：US20060067870A1

公开(公告)日：2006-03-30

申请号：US11202185

申请日：2005-08-12

Applicant: Noe-jung Park ,  Sung-hoon Lee

Inventor： Noe-jung Park ,  Sung-hoon Lee

IPC: D01F9/12

CPC classification number: B82Y30/00 ,  C01B32/174 ,  D01F11/121 ,  Y10S977/734 ,  Y10S977/742

Abstract: A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.

Abstract translation: 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。

公开(公告)号：US07002644B2

公开(公告)日：2006-02-21

申请号：US10745704

申请日：2003-12-29

Applicant: Dong Jae You ,  Nam Do Son ,  Sung Hoon Lee

Inventor： Dong Jae You ,  Nam Do Son ,  Sung Hoon Lee

IPC: G02F1/1333 ,  G02F1/1335

CPC classification number: G02F1/13338 ,  G02F1/133553 ,  G02F1/133615

Abstract: An LCD device having an EM sensor is disclosed for preventing a mistake in location detection, in which a lamp housing is formed of a flexible material, and a supplementary lamp housing is formed to support the flexible lamp housing. The LCD device includes an LCD panel; a backlight unit having a light-guiding plate below the LCD panel, a fluorescent lamp at one side of the light-guiding plate, and a reflecting plate on a lower surface of the light-guiding plate; a first lamp housing of a flexible material extending from the lower side of the reflecting plate and surrounding the fluorescent lamp at one side of the light-guiding plate; a second lamp housing surrounding and supporting the first lamp housing; a main supporter supporting the LCD panel and the backlight unit; an EM sensor below the main supporter and first and second lamp housings; and a case top surrounding the main supporter and the circumference of the LCD panel.

Abstract translation: 公开了具有EM传感器的LCD装置，用于防止位置检测中的错误，其中灯壳由柔性材料形成，并且形成辅助灯壳体以支撑柔性灯壳体。 LCD装置包括LCD面板; 具有在LCD面板下方的导光板的背光单元，在导光板一侧的荧光灯和在导光板的下表面上的反射板; 柔性材料的第一灯壳从反射板的下侧延伸并在导光板的一侧包围荧光灯; 围绕并支撑第一灯壳的第二灯壳; 支持LCD面板和背光单元的主要支持者; 在主支架下方的EM传感器以及第一和第二灯壳; 以及围绕主支架的外壳和LCD面板的周边。

公开(公告)号：US20050227391A1

公开(公告)日：2005-10-13

申请号：US11100377

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC: H05B33/00 ,  C09K11/00 ,  C09K11/54 ,  H01L21/00 ,  H01L21/22 ,  H01L21/38 ,  H01L33/26 ,  H01L51/00 ,  H01L51/30

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/38 ,  H01L51/0038 ,  H01L51/502 ,  H01L51/5032 ,  H01L2251/303

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

Abstract translation: 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线具有n型掺杂部分和p型掺杂部分，发光层 在n型掺杂部分和p型掺杂部分之间，分别填充与p型掺杂部分和n型掺杂部分相对应的空间的第一和第二导电有机聚合物和形成在p型掺杂部分上的第二导电层 纳米线 有机聚合物通过从纳米线的相应表面接收电子或通过向纳米线的表面提供电子来掺杂纳米线的相应表面。

公开(公告)号：US20050224790A1

公开(公告)日：2005-10-13

申请号：US11100376

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-Iyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-Iyong Choi ,  Jong-seob Kim

IPC: H01L29/06 ,  H01L27/15 ,  H01L33/28 ,  H01L33/36

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L33/08 ,  H01L33/18

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.

Abstract translation: 提供一种纳米线发光器件及其制造方法。 纳米线发光器件包括在衬底上的第一导电层，第一导电层上的多个纳米线，每个纳米线具有p型掺杂部分和两端的n型掺杂部分， p型掺杂部分和n型掺杂部分，以及形成在纳米线上的第二导电层。 掺杂部分通过在其圆周附近吸附分子而形成。

公开(公告)号：US20050224780A1

公开(公告)日：2005-10-13

申请号：US11100455

申请日：2005-04-07

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC: H01L29/06 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18

CPC classification number: H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

Abstract translation: 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。

公开(公告)号：US20050176413A1

公开(公告)日：2005-08-11

申请号：US11049873

申请日：2005-02-04

Applicant: Sung-Hoon Lee ,  Tai-Yoon Lee

Inventor： Sung-Hoon Lee ,  Tai-Yoon Lee

IPC: H04B7/26 ,  H04L12/02 ,  H04L12/14 ,  H04L12/24 ,  H04L12/28 ,  H04L12/70 ,  H04L12/701 ,  H04L12/903 ,  H04M11/00 ,  H04W4/00 ,  H04W4/24 ,  H04W8/26 ,  H04W12/00 ,  H04W12/06 ,  H04W48/18 ,  H04W60/00 ,  H04W76/02 ,  H04W92/02 ,  H04Q7/20

CPC classification number: H04L12/5692 ,  H04L12/14 ,  H04L12/145 ,  H04W4/00 ,  H04W8/26 ,  H04W76/10 ,  H04W84/105 ,  H04W92/02

Abstract: A method and system for providing a data service in interworking wireless public and private networks, allows for data service data being transmitted through the private network when a data service is to be transmitted through the private network within the network where the wireless public network and the wired/wireless private network are interworked. A method of providing a data service in interworking wireless public and private networks, includes transmitting, by a user, a data service request signal; determining, by the private network, based on identifier information through which of the private and public networks to transmit the data service; transmitting a private network data service call to a private content server when it is determined based on the identifier information that it is the private network data service call; and transmitting a public network data service call to a public network content server when it is determined based on the identifier information that it is the public network data service call. Consequently, there is an advantage that a packet data service can be forwarded through any one selected from the public network and the private network. Further, there is another advantage that a data service is available through the private network by modifying the system without changing each user terminal, and thus an additional cost is hardly caused.

Abstract translation: 一种用于在互通无线公共和专用网络中提供数据服务的方法和系统，当数据服务将通过无线公共网络和网络中的专用网络传输时，允许通过专用网络传输数据服务数据 有线/无线私网互通。 一种在互通无线公共和专用网络中提供数据业务的方法，包括由用户发送数据业务请求信号; 由私有网络基于通过哪个私有和公共网络的传输数据服务的标识符信息来确定; 当基于所述专用网络数据服务呼叫的所述标识符信息确定专用网络数据服务呼叫时，发送专用网络数据服务呼叫; 以及当基于所述标识符信息确定所述公共网络数据服务呼叫时，将公共网络数据服务呼叫发送到公共网络内容服务器。 因此，具有可以通过从公共网络和专用网络中选择的任何一个来转发分组数据服务的优点。 此外，还有一个优点是，通过在不改变每个用户终端的情况下修改系统，通过私有网络可获得数据服务，因此几乎不引起额外的成本。

公开(公告)号：US06835620B1

公开(公告)日：2004-12-28

申请号：US10881461

申请日：2004-06-30

Applicant: Sung Hoon Lee

Inventor： Sung Hoon Lee

IPC: H01L218247

CPC classification number: H01L27/11521 ,  H01L27/115

Abstract: Disclosed is a method of manufacturing flash memory devices. According to the present invention, the method comprises the steps of sequentially forming a gate oxide film, a first polysilicon film for a floating gate electrode and a pad nitride film on a semiconductor substrate, patterning the gate oxide film, the first polysilicon film, the pad nitride film and the semiconductor substrate by a given thickness to form an isolation film pattern and a floating gate electrode pattern at the same time, filling the isolation film pattern with an insulating film to form an isolation film and then stripping the pad nitride film, sequentially forming a dielectric film, a second polysilicon film for a control gate electrode and a metal silicide film on the results, patterning the metal silicide film and the second polysilicon film to form a control gate electrode pattern, performing an electrochemical process for the results, whereby the first polysilicon film formed in regions other than the region where the second polysilicon film formed on the isolation film and the floating gate electrode pattern are formed becomes a porous silicon film, performing a thermal oxidization process for the results so that the porous silicon film becomes a first oxide film, and forming a second oxide film on the whole results.

Abstract translation: 公开了一种制造闪速存储器件的方法。 根据本发明，该方法包括以下步骤：在半导体衬底上依次形成栅极氧化膜，浮置栅电极用第一多晶硅膜和衬垫氮化物膜，构图栅极氧化膜，第一多晶硅膜， 衬垫氮化物膜和半导体衬底同时形成隔离膜图案和浮栅电极图案，用绝缘膜填充隔离膜图案以形成隔离膜，然后剥离衬垫氮化物膜， 对结果依次形成电介质膜，用于控制栅电极的第二多晶硅膜和金属硅化物膜，图案化金属硅化物膜和第二多晶硅膜以形成控制栅电极图案，执行结果的电化学处理， 由此形成在除了形成在隔离物上的第二多晶硅膜的区域之外的区域中的第一多晶硅膜 n膜和浮栅电极图案变成多孔硅膜，对结果进行热氧化处理，使得多孔硅膜成为第一氧化膜，并且总体上形成第二氧化物膜。