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公开(公告)号：US20050269576A1
公开(公告)日：2005-12-08
申请号：US11144702
申请日：2005-06-06
Applicant: Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
Inventor： Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
CPC classification number: H01L51/5203 , H01L33/382 , H01L33/62 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。
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2.发明授权P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element 有权使用卤素元素和富勒烯或碱元素的P型半导体碳纳米管公开(公告)号：US07501650B2
公开(公告)日：2009-03-10
申请号：US11202185
申请日：2005-08-12
Applicant: Noe-jung Park , Sung-hoon Lee
Inventor： Noe-jung Park , Sung-hoon Lee
IPC: H01L29/10
CPC classification number: B82Y30/00 , C01B32/174 , D01F11/121 , Y10S977/734 , Y10S977/742
Abstract: A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.
Abstract translation: 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。
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公开(公告)号：US20070235796A1
公开(公告)日：2007-10-11
申请号：US11224288
申请日：2005-09-13
Applicant: Hyo-sug Lee , Jong-seob Kim , Noe-jung Park , Sung-hoon Lee , Young-gu Jin
Inventor： Hyo-sug Lee , Jong-seob Kim , Noe-jung Park , Sung-hoon Lee , Young-gu Jin
IPC: H01L29/788
CPC classification number: H01L29/0665 , B82Y10/00 , C30B29/16 , C30B29/62 , C30B33/00 , H01L29/0669 , H01L29/0673
Abstract: A p-type doped nanowire and a method of fabricating the same. The nanowire has a p-type doped portion which is formed by chemically binding a radical having a half-occupied outermost orbital shell to the corresponding portion of the nanowire, which corresponding portion of the nanowire donates an electron to the radical to thereby form the p-type doped portion.
Abstract translation: 一种p型掺杂纳米线及其制造方法。 纳米线具有p型掺杂部分，其通过将具有半占据的最外轨道壳的自由基化学结合到纳米线的相应部分而形成，纳米线的相应部分向自由基提供电子，从而形成p 型掺杂部分。
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公开(公告)号：US08217401B2
公开(公告)日：2012-07-10
申请号：US12716733
申请日：2010-03-03
Applicant: Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-Gu Jin
Inventor： Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-Gu Jin
CPC classification number: H01L51/5203 , H01L33/382 , H01L33/62 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。
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公开(公告)号：US20100155695A1
公开(公告)日：2010-06-24
申请号：US12716733
申请日：2010-03-03
Applicant: Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
Inventor： Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
IPC: H01L33/06
CPC classification number: H01L51/5203 , H01L33/382 , H01L33/62 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20060067870A1
公开(公告)日：2006-03-30
申请号：US11202185
申请日：2005-08-12
Applicant: Noe-jung Park , Sung-hoon Lee
Inventor： Noe-jung Park , Sung-hoon Lee
IPC: D01F9/12
CPC classification number: B82Y30/00 , C01B32/174 , D01F11/121 , Y10S977/734 , Y10S977/742
Abstract: A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.
Abstract translation: 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。
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公开(公告)号：US07700953B2
公开(公告)日：2010-04-20
申请号：US11144702
申请日：2005-06-06
Applicant: Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
Inventor： Noe-jung Park , Sung-hoon Lee , Hyo-sug Lee , Young-gu Jin
CPC classification number: H01L51/5203 , H01L33/382 , H01L33/62 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.
Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。
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公开(公告)号：US07332740B2
公开(公告)日：2008-02-19
申请号：US11221864
申请日：2005-09-09
Applicant: Noe-jung Park , Kwang-hee Kim , Dong-hun Kang , Jae-woong Hyun , Ki-ha Hong
Inventor： Noe-jung Park , Kwang-hee Kim , Dong-hun Kang , Jae-woong Hyun , Ki-ha Hong
CPC classification number: G11C13/0014 , B82Y10/00 , G11C13/02 , G11C13/025 , H01L51/002 , H01L51/0048 , H01L51/0051 , H01L51/0512 , H01L51/052 , H01L51/0525 , Y10S977/742
Abstract: Provided is a memory device comprising a molecular adsorption layer. The memory device includes: a substrate; a source electrode and a drain electrode formed on the substrate and separated from each other; a carbon nanotube (CNT) layer electrically connected to the source electrode and the drain electrode; a memory cell contacting the CNT so as to store a charge from the CNT; and a gate electrode formed on the memory cell, wherein the memory cell comprises: a first insulating layer formed on the CNT; a molecular adsorption layer which is formed on the first insulating layer and acts as a charge storage layer; and a second insulating layer formed on the molecular adsorption layer.
Abstract translation: 提供了包含分子吸附层的记忆装置。 存储器件包括：衬底; 源电极和漏电极，形成在基板上并彼此分离; 电连接到源电极和漏电极的碳纳米管（CNT）层; 与CNT接触以存储来自CNT的电荷的存储单元; 以及形成在所述存储单元上的栅电极，其中所述存储单元包括：形成在所述CNT上的第一绝缘层; 分子吸附层，其形成在第一绝缘层上并用作电荷存储层; 以及形成在分子吸附层上的第二绝缘层。
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公开(公告)号：US20070246784A1
公开(公告)日：2007-10-25
申请号：US11212582
申请日：2005-08-29
Applicant: Dong-hun Kang , Noe-jung Park , Wan-jun Park
Inventor： Dong-hun Kang , Noe-jung Park , Wan-jun Park
IPC: H01L29/76
CPC classification number: H01L51/0545 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1033 , H01L51/0048 , H01L51/0558
Abstract: An ambipolar nanotube field effect transistor is converted to a unipolar nanotube field effect transistor by providing a carrier-trapping material such as oxygen molecules for the nanotube such as by adsorption or by providing a layer of material containing the carrier-trapping material adjacent to the nanotube.
Abstract translation: 通过为纳米管提供诸如氧分子的载流子捕获材料，例如通过吸附或者通过提供包含与纳米管相邻的载流子俘获材料的材料层，将双极纳米管场效应晶体管转换为单极纳米管场效应晶体管 。
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公开(公告)号：US20070187729A1
公开(公告)日：2007-08-16
申请号：US11585085
申请日：2006-10-24
Applicant: Wan-jun Park , Noe-jung Park
Inventor： Wan-jun Park , Noe-jung Park
CPC classification number: H01L51/0048 , B82Y10/00 , D01F11/121 , H01L51/002 , H01L51/0545
Abstract: Example embodiments relate to a unipolar carbon nanotube having a carrier-trapping material and a unipolar field effect transistor having the unipolar carbon nanotube. The carrier-trapping material, which is sealed in the carbon nanotube, may readily transform an ambipolar characteristic of the carbon nanotube into a unipolar characteristic by doping the carbon nanotube. Also, p-type and n-type carbon nanotubes and field effect transistors may be realized according to the carrier-trapping material.
Abstract translation: 示例性实施方案涉及具有载体捕获材料的单极碳纳米管和具有单极碳纳米管的单极场效应晶体管。 密封在碳纳米管中的载流子捕获材料可以通过掺杂碳纳米管容易地将碳纳米管的双极性特征转化为单极特性。 此外，可以根据载流子捕获材料实现p型和n型碳纳米管和场效应晶体管。
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