公开(公告)号：US07282457B2

公开(公告)日：2007-10-16

申请号：US09798445

申请日：2001-03-02

申请人： Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

发明人： Daniel Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于5个气氛至25个气氛N 2 O 2和600℃至750℃的温度范围的环境中，这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US07279435B2

公开(公告)日：2007-10-09

申请号：US10933890

申请日：2004-09-02

申请人： Daniel F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

发明人： Daniel F. Gealy ,  Dave Chapek ,  Scott DeBoer ,  Husam N. Al-Shareef ,  Randhir Thakur

IPC分类号： H01L21/469 ,  H01L21/42

CPC分类号： H01L21/28202 ,  C30B33/005 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31662 ,  H01L29/518 ,  Y10S438/903

摘要： A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

摘要翻译： 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于五（5）大气压至二十五（25）个大气压N 2 O的环境和600℃至750℃的温度范围内，这是 导致N＆lt; 2＆gt; O超越关键的条件。 通过防止N 2 O 2变得超临界，控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯，铂，铱，铑，镍，银和金。

公开(公告)号：US07258739B2

公开(公告)日：2007-08-21

申请号：US11051112

申请日：2005-02-04

申请人： Toshiaki Ono ,  Masataka Hourai

发明人： Toshiaki Ono ,  Masataka Hourai

IPC分类号： C30B15/20

CPC分类号： C30B25/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/31662

摘要： Firstly, a silicon ingot in which boron and germanium were doped is sliced to prepare a silicon wafer and then the wafer is thermally processed by oxidation to form the thermal oxidation film on the surface layer portion of the wafer. Thereby, the concentration of germanium is enhanced in the vicinity of the interface with the thermal oxidation film of the wafer. Then, the thermal oxidation film is removed from the surface layer portion of the wafer. Further, an epitaxial layer consisting of a silicon single crystal in which a lower concentration of boron than the concentration of boron in the wafer was doped is grown on the shallow surface layer portion of the wafer by an epitaxial growth method. According to the present invention, the doping amount of germanium is reduced and the generation of misfit dislocations is suppressed.

摘要翻译： 首先，将掺杂有硼和锗的硅锭切片以制备硅晶片，然后通过氧化对晶片进行热处理，以在晶片的表面层部分上形成热氧化膜。 由此，在与晶片的热氧化膜的界面附近，锗的浓度增强。 然后，从晶片的表层部分除去热氧化膜。 此外，通过外延生长法在晶片的浅表面层部分上生长由掺杂了比晶片中的硼浓度低的硼浓度的硅单晶组成的外延层。 根据本发明，锗的掺杂量降低，并且抑制失配位错的产生。

公开(公告)号：US07169714B2

公开(公告)日：2007-01-30

申请号：US10986984

申请日：2004-11-12

申请人： Samir Chaudhry ,  Pradip K. Roy

发明人： Samir Chaudhry ,  Pradip K. Roy

IPC分类号： H01L21/469

CPC分类号： H01L29/66666 ,  C30B29/06 ,  C30B33/005 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/31662 ,  H01L21/32105 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7827

摘要： A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphous and notably dense. The oxide layer is a graded growth oxide layer including a composite of a first oxide portion formed at a relatively low temperature below the viscoelastic temperature of the oxide film and a second oxide portion formed at a relatively high temperature above the viscoelastic temperature of the oxide film. The process for forming the oxide layer includes thermally oxidizing at a first temperature below the viscoelastic temperature of the film, and slowly ramping up the temperature to a second temperature above the viscoelastic temperature of the film and heating at the second temperature. After the second, high temperature oxidation above the viscoelastic temperature, the structure is then slowly cooled under gradual, modulated cooling conditions.

摘要翻译： 在垂直非平面半导体表面上形成氧化物层的方法提供了具有粗糙度小于3埃的原始界面的低应力氧化物层。 氧化物层包括基本无定形且特别密集的部分。 氧化物层是分级生长氧化物层，其包括在低于氧化膜的粘弹性温度的较低温度下形成的第一氧化物部分和在高于氧化膜的粘弹性温度的较高温度下形成的第二氧化物部分的复合物 。 用于形成氧化物层的方法包括在低于膜的粘弹性温度的第一温度下热氧化，并将温度缓慢升高到高于膜的粘弹性温度的第二温度并在第二温度下加热。 第二次，高于粘弹性温度的高温氧化，然后在逐渐调节的冷却条件下缓慢冷却结构。

公开(公告)号：US07112538B2

公开(公告)日：2006-09-26

申请号：US10293795

申请日：2002-11-12

申请人： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

发明人： Armand Ferro ,  Ivo Raaijmakers ,  Derrick Foster

IPC分类号： H01L21/31

CPC分类号： C30B29/06 ,  C23C16/4405 ,  C23C16/481 ,  C30B25/02 ,  C30B25/105 ,  C30B25/14 ,  C30B33/005 ,  C30B33/02 ,  C30B33/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28017 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/66651

摘要： A single-wafer, chemical vapor deposition reactor is provided with hydrogen and silicon source gas suitable for epitaxial silicon deposition, as well as a safe mixture of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber. In particular, a sacrificial oxidation is performed, followed by a hydrogen bake to sublime the oxide and leave a clean substrate. Epitaxial deposition can follow in situ. A protective oxide can also be formed over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer can serve as the gate dielectric, and a polysilicon gate layer can be formed in situ over the oxide.

公开(公告)号：US20050287725A1

公开(公告)日：2005-12-29

申请号：US11197554

申请日：2005-08-05

申请人： Junichi Kitagawa

发明人： Junichi Kitagawa

IPC分类号： C23C8/02 ,  C23C8/28 ,  C23C8/34 ,  C23C8/36 ,  C30B33/00 ,  H01L21/314 ,  H01L21/00 ,  H01L21/31 ,  H01L21/84 ,  H01L21/469

CPC分类号： H01L21/02249 ,  C23C8/02 ,  C23C8/28 ,  C23C8/34 ,  C23C8/36 ,  C30B33/005 ,  H01L21/0214 ,  H01L21/02252 ,  H01L21/3144

摘要： According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.

摘要翻译： 根据本发明，通过使用微波的等离子体，等离子体氧化处理和等离子体氮化处理同时施加到半导体衬底的表面。 在通过如上所述的等离子体氧氮化处理形成绝缘膜之后，根据需要进一步将绝缘膜应用等离子体氮化处理。 由此，可以形成具有优异的电气特性的绝缘膜。

公开(公告)号：US06802712B2

公开(公告)日：2004-10-12

申请号：US10685062

申请日：2003-10-14

申请人： Henry Bernhardt ,  Thomas Seidemann ,  Michael Stadtmueller

发明人： Henry Bernhardt ,  Thomas Seidemann ,  Michael Stadtmueller

IPC分类号： F27D110

CPC分类号： H01L21/67109 ,  C23C16/46 ,  C30B25/10 ,  C30B33/005

摘要： A heating system, a method for heating a deposition reactor or an oxidation reactor, and a reactor utilizing the heating system are particularly suited for low-pressure chemical vapor deposition or oxidation. A heating system is particularly useful for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction that is parallel to the longitudinal axis of the reactor, to enable a deposition or oxidation reaction. The heating system is adapted to change the reactor temperature during the process. In addition, a method heats a reactor to enable a reaction. Preferably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in-plane uniformity of deposited or oxidized layers can be largely improved.

摘要翻译： 加热系统，用于加热沉积反应器或氧化反应器的方法以及利用加热系统的反应器特别适用于低压化学气相沉积或氧化。 加热系统特别可用于加热其中多个晶片垂直于平行于反应器的纵向轴线的反应物气体流动方向保持的反应器，以实现沉积或氧化反应。 加热系统适用于在过程中改变反应器温度。 此外，一种方法加热反应器以进行反应。 优选地，将反应器沿平行于反应物气体流动方向的方向分割的多个反应器区域中的每一个以指示该特定区域的温度相对于时间的不同温度分布被加热。 由此，能够大幅提高沉积层或氧化层的面内均匀性。

公开(公告)号：US20040096707A1

公开(公告)日：2004-05-20

申请号：US10453470

申请日：2003-06-03

发明人： Sankar Sambasivan ,  Scott A. Barnett ,  Ilwon Kim ,  John W. Rechner

IPC分类号： B05D003/04 ,  B05D003/02 ,  B32B009/00

CPC分类号： H01L39/2461 ,  C23C8/02 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  C30B29/38 ,  C30B33/005

摘要： The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

摘要翻译： 本发明涉及从氮化物前体转化的合适基底上的氧化物。

公开(公告)号：US06733592B2

公开(公告)日：2004-05-11

申请号：US10142990

申请日：2002-05-13

申请人： Takao Fujikawa ,  Yoichi Inoue ,  Yutaka Narukawa ,  Takahiko Ishii ,  Tsuneharu Masuda ,  Makoto Kadoguchi ,  Yoshihiko Sakashita

发明人： Takao Fujikawa ,  Yoichi Inoue ,  Yutaka Narukawa ,  Takahiko Ishii ,  Tsuneharu Masuda ,  Makoto Kadoguchi ,  Yoshihiko Sakashita

IPC分类号： C23C1600

CPC分类号： C30B33/005 ,  H01L21/67109 ,  Y10S414/135

摘要： The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.

摘要翻译： 本发明的目的是获得适于处理半导体晶片的小尺寸，高温和高压处理装置。 本发明的高温高压装置旨在在高温高压气体的气氛中处理半导体晶片，并且包括在其下部具有用于将半导体晶片放置在其中的开口的压力容器 并且，设置成能够垂直移动以便打开和关闭下部开口的下盖，用于将半导体晶片堆叠和分离到下盖上的晶片传送装置和附接到下盖的加热半导体的加热器 晶圆

公开(公告)号：US20040058080A1

公开(公告)日：2004-03-25

申请号：US10470060

申请日：2003-07-24

发明人： Masahiro Kawasaki

IPC分类号： B05D003/04 ,  B05D001/36

CPC分类号： G02B6/132 ,  C23C16/24 ,  C23C16/56 ,  C30B33/005

摘要： There is provided a method of forming a silicon dioxide film, which comprises repeating a step of depositing a silicon layer on a silicon substrate to forma silicon dioxide film of a predetermined thickness, and which makes it possible to suitably select the surface roughness of the silicon dioxide film that is formed and the rate of growth of the silicon film that is deposited. According to the method of forming the silicon dioxide film that is proposed above, it comprises a step of depositing any one of polysilicon, epitaxial silicon or amorphous silicon on the silicon substrate or on the silicon dioxide film formed on the silicon substrate by the thermal oxidation treatment to form a silicon film, and a step of thermally oxidizing the silicon film to convert it into a silicon dioxide film, the step of deposition and the step of thermal oxidation being repeated a plural number of times.

摘要翻译： 提供一种形成二氧化硅膜的方法，其包括重复在硅衬底上沉积硅层以形成预定厚度的二氧化硅膜的步骤，并且使得可以适当地选择硅的表面粗糙度 形成的二氧化硅膜和沉积的硅膜的生长速率。 根据以上提出的形成二氧化硅膜的方法，其包括通过热氧化在硅衬底或硅衬底上形成的二氧化硅膜上沉积多晶硅，外延硅或非晶硅中的任何一种的步骤 处理以形成硅膜，以及热氧化硅膜以将其转化为二氧化硅膜的步骤，沉积步骤和热氧化步骤重复多次。