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    PISTON RING
    101.
    发明申请
    PISTON RING 有权
    活塞环

    公开(公告)号：US20100044967A1

    公开(公告)日：2010-02-25

    申请号：US12527051

    申请日：2007-12-18

    Applicant: Johannes Esser ,  Frank Münchow

    Inventor： Johannes Esser ,  Frank Münchow

    IPC: F16J9/26

    CPC classification number: F16J9/26 ,  C23C14/025 ,  C23C14/0641 ,  C23C14/0676

    Abstract: The invention relates to a piston ring, having a base body, which comprises a running surface provided with a chamber, an upper and a lower flank surface, and an inner circumferential surface, wherein at least the chamber is provided with at least one wear protection layer, and a PVD cover layer is applied to the running surface at least in some regions such that the base body has the PVD cover layer only in the edge regions, which is to say outside of the chamber, in the finished state.

    Abstract translation: 本发明涉及一种具有基体的活塞环，活塞环包括设有腔室，上下侧面和内圆周表面的运行表面，其中至少该腔室设置有至少一个磨损保护 至少在一些区域中将PVD覆盖层施加到运行表面，使得基体仅在处于完成状态的边缘区域（即，在室外）具有PVD覆盖层。

    Wear-resistant ceramic coating
    102.
    发明申请
    Wear-resistant ceramic coating 审中-公开
    耐磨陶瓷涂层

    公开(公告)号：US20100035051A1

    公开(公告)日：2010-02-11

    申请号：US12222446

    申请日：2008-08-08

    Applicant: Bekir Sami Yilbas ,  Muhammad A. Hawwa

    Inventor： Bekir Sami Yilbas ,  Muhammad A. Hawwa

    IPC: B32B15/04 ,  B32B18/00 ,  B05D3/06 ,  C23C14/34

    CPC classification number: C23C14/0641 ,  C23C14/022 ,  C23C14/025 ,  C23C24/08 ,  C23C24/10 ,  Y10T428/263 ,  Y10T428/265

    Abstract: The wear-resistant ceramic coating is a coating formed with a first thin film nitride layer formed by laser nitriding and a second thin film layer of titanium nitride or other ceramic material formed by physical vapor deposition. For example, the coating may be formed on a Ti-6Al-4V alloy by first directing a CO2 laser beam towards the surface of the alloy while subjecting the surface to a flow of pressurized pure nitrogen. This process results in the formation of a first nitride layer approximately 80 microns in thickness by laser melting. The first layer is polished to a smooth surface. Then a thin film (about two micrometers) of titanium nitride is applied over the first layer by physical vapor deposition, e.g., by sputtering at 260° C. Similar coatings may be applied to other titanium alloys, such as Ti-5Al-2.5Fe, or to other metals, such as high-speed steel (HSS).

    Abstract translation: 耐磨陶瓷涂层是由激光氮化形成的第一薄膜氮化物层和通过物理气相沉积形成的氮化钛或其它陶瓷材料的第二薄膜层形成的涂层。 例如，可以在Ti-6Al-4V合金上形成涂层，首先将CO 2激光束引向合金的表面，同时使表面经受加压纯氮的流动。 该过程通过激光熔化形成厚度约为80微米的第一氮化物层。 第一层被抛光到光滑的表面。 然后，通过物理气相沉积，例如通过在260℃下的溅射，在第一层上施加氮化钛薄膜（约2微米）。可以将类似的涂层施加到其它钛合金，例如Ti-5Al-2.5Fe ，或其他金属，如高速钢（HSS）。

    Control of crystal orientation and stress in sputter deposited thin films
    105.
    发明申请
    Control of crystal orientation and stress in sputter deposited thin films 审中-公开
    溅射沉积薄膜中晶体取向和应力的控制

    公开(公告)号：US20090246385A1

    公开(公告)日：2009-10-01

    申请号：US12411369

    申请日：2009-03-25

    Applicant: Valery FELMETSGER ,  Pavel N. LAPTEV

    Inventor： Valery FELMETSGER ,  Pavel N. LAPTEV

    IPC: B05D3/14 ,  C23C14/34 ,  B05D5/00

    CPC classification number: C23C14/54 ,  C23C14/024 ,  C23C14/025 ,  C23C14/0617 ,  C23C14/14 ,  C30B23/002 ,  C30B29/403

    Abstract: A two step thin film deposition process is disclosed to provide for the simultaneous achievement of controlled stress and the achievement of preferred crystalline orientation in sputter-deposited thin films. In a preferred embodiment, a first relatively short deposition step is performed without substrate bias to establish the crystalline orientation of the deposited film followed by a second, typically relatively longer deposition step with an applied rf bias to provide for low or no stress conditions in the growing film. Sputter deposition without substrate bias has been found to provide good crystal orientation and can be influenced through the crystalline orientation of the underlying layers and through the introduction of intentionally oriented seed layers to promote preferred crystalline orientation. Conversely, sputter deposition with substrate bias has been found to provide a means for producing stress control in growing films.

    Abstract translation: 公开了一种两步薄膜沉积方法，以提供同时实现受控应力和在溅射沉积的薄膜中实现优选的晶体取向。 在优选实施例中，执行第一相对较短的沉积步骤而没有衬底偏压以建立沉积膜的晶体取向，之后是施加的rf偏置的第二，通常相对较长的沉积步骤，以提供低或无应力条件 成长中的电影。 已经发现没有衬底偏压的溅射沉积提供了良好的晶体取向，并且可以通过底层的结晶取向和通过引入有意导向的种子层来促进优选的晶体取向来影响。 相反，已经发现具有衬底偏压的溅射沉积提供了用于在生长膜中产生应力控制的手段。

    Magnetic sensing element including free layer having gradient composition and method for manufacturing the same
    106.
    发明授权
    Magnetic sensing element including free layer having gradient composition and method for manufacturing the same 有权
    磁感应元件包括具有梯度组成的自由层及其制造方法

    公开(公告)号：US07564661B2

    公开(公告)日：2009-07-21

    申请号：US11352958

    申请日：2006-02-13

    Applicant: Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    Inventor： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC: G11B5/127

    CPC classification number: H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/025 ,  C23C14/165 ,  C23C14/584 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3268 ,  H01F41/302 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/1193

    Abstract: A magnetic sensing element which allows a high reproduction output and reduction in asymmetry of reproduction waveform to become mutually compatible, as well as a method for manufacturing the same, is provided. In the inside of a second pinned magnetic layer and a free magnetic layer, the atomic percentage of an element Z is decreased in a region close to a non-magnetic material layer. Consequently, the ferromagnetic coupling magnetic field due to magnetostatic coupling (topological coupling) between the pinned magnetic layer and the free magnetic layer can be reduced. At the same time, in a region at a distance from the non-magnetic material layer, the atomic percentage of an element Z is increased, a spin-dependent bulk scattering coefficient is increased, and a product of the amount of change in magnetic resistance and the element area of the magnetic sensing element can be maintained at a high level.

    Abstract translation: 提供了允许高再现输出和减小再现波形的不对称性以变得相互兼容的磁传感元件及其制造方法。 在第二固定磁性层和自由磁性层的内部，元素Z的原子百分比在接近非磁性材料层的区域中减小。 因此，可以减少由固定磁性层和自由磁性层之间的静磁耦合（拓扑耦合）引起的铁磁耦合磁场。 同时，在距离非磁性材料层一定距离的区域中，元素Z的原子百分数增加，自旋相关体散射系数增大，磁阻变化量的乘积 并且可以将磁感测元件的元件面积保持在高水平。

    COPPER METALLIZATION UTILIZING REFLOW ON NOBLE METAL LINERS
    107.
    发明申请
    COPPER METALLIZATION UTILIZING REFLOW ON NOBLE METAL LINERS 审中-公开
    铜金属化使用金属内衬使用反射

    公开(公告)号：US20090169760A1

    公开(公告)日：2009-07-02

    申请号：US11968136

    申请日：2007-12-31

    Applicant: Rohan Akolkar ,  Florian Gstrein ,  Boyan Boyanov ,  Sridhar Balakrishnan

    Inventor： Rohan Akolkar ,  Florian Gstrein ,  Boyan Boyanov ,  Sridhar Balakrishnan

    IPC: C23C4/06 ,  B05D5/12

    CPC classification number: C23C14/046 ,  C23C14/025 ,  C23C14/16 ,  C23C14/5806 ,  C23C14/588 ,  H01L21/76846 ,  H01L21/76882 ,  H01L23/53238

    Abstract: Methods for making copper (Cu) interconnects in semiconductor devices for interconnect dimensions less than 50 nm are described. The processes form Cu interconnects using a sequence of barrier layer, liner layer, and Cu deposition layer depositions, followed by a thermally assisted Cu reflow of the Cu deposition layer, and then a chemical mechanical polish (CMP) to removed excess portions of the reflowed Cu. The liner layer comprises noble metals such as Ru, Ir, Os, Rh, Re, Pd, Pt, and Au. Such processes avoids the formation of voids in copper interconnects with dimensions less than 50 nm.

    Abstract translation: 描述了半导体器件中铜（Cu）互连的互连尺寸小于50nm的方法。 这些过程使用阻挡层，衬层和Cu沉积层沉积序列形成Cu互连，随后是Cu沉积层的热辅助铜回流，然后用化学机械抛光（CMP）去除被回流的多余部分 铜。 衬里层包括贵金属如Ru，Ir，Os，Rh，Re，Pd，Pt和Au。 这种方法避免了在尺寸小于50nm的铜互连件中形成空隙。

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