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    Method for making a transducer
    2.
    发明授权
    Method for making a transducer 有权
    制造换能器的方法

    公开(公告)号：US07642115B2

    公开(公告)日：2010-01-05

    申请号：US12426310

    申请日：2009-04-20

    Applicant: Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    IPC: H01L21/58

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

    Abstract translation: 一种用于形成换能器的方法，包括提供绝缘体上半导体晶片的步骤，该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜，在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极，以及沉积或生长包括电连接部分的粘合层， 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤，所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起，从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器，其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

    High temperature resistant solid state pressure sensor
    5.
    发明授权
    High temperature resistant solid state pressure sensor 有权
    耐高温固态压力传感器

    公开(公告)号：US07952154B2

    公开(公告)日：2011-05-31

    申请号：US12579123

    申请日：2009-10-14

    Applicant: Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    Inventor： Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    IPC: H01L29/84

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    METHOD FOR MAKING A TRANSDUCER
    8.
    发明申请
    METHOD FOR MAKING A TRANSDUCER 有权
    制造传感器的方法

    公开(公告)号：US20090203163A1

    公开(公告)日：2009-08-13

    申请号：US12426310

    申请日：2009-04-20

    Applicant: Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    Inventor： Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

    IPC: H01L21/50 ,  H01L29/84

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.

    Abstract translation: 一种用于形成换能器的方法，包括提供绝缘体上半导体晶片的步骤，该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜，在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极，以及沉积或生长包括电连接部分的粘合层， 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤，所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起，从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器，其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    10.
    发明申请
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 有权
    耐高温固体压力传感器

    公开(公告)号：US20100155866A1

    公开(公告)日：2010-06-24

    申请号：US12579123

    申请日：2009-10-14

    Applicant: Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    Inventor： Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    IPC: H01L29/84 ,  H01L21/30

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

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