公开(公告)号：US10925142B2

公开(公告)日：2021-02-16

申请号：US16149643

申请日：2018-10-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chia Hsu ,  Kuan-Hung Chen ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/20 ,  G21K1/06

Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.

公开(公告)号：US10917959B2

公开(公告)日：2021-02-09

申请号：US16587018

申请日：2019-09-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis Chang ,  Jen-Hao Yeh ,  Tzung-Chi Fu ,  Bo-Tsun Liu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00 ,  G03F7/00 ,  G03F7/20

Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

公开(公告)号：US20210033986A1

公开(公告)日：2021-02-04

申请号：US16805836

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Po-Chung Cheng ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: G03F7/20 ,  H05G2/00

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

公开(公告)号：US10852191B2

公开(公告)日：2020-12-01

申请号：US16438710

申请日：2019-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Hao Yeh ,  Chun-Lin Chang ,  Han-Lung Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G01J4/04 ,  G02B27/28 ,  G03F7/20 ,  G02B5/30

Abstract: A light source system is provided. The light source system is capable of measuring a polarization angle and includes a light source configured to emit an original light beam, and the original light beam has an original polarization angle. The light source system further includes an amplifying module configured to amplify the original light beam and generate a forward beam for hitting a target, and the forward beam has a forward polarization angle that is equal to the original polarization angle. The light source system further includes a polarization measurement unit, and the polarization measurement unit includes a first polarization measurement module configured to receive a first return beam and measure a first polarization angle of the first return beam. The first return beam is reflected from the target.

公开(公告)号：US10802405B2

公开(公告)日：2020-10-13

申请号：US16124357

申请日：2018-09-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03B27/54 ,  G03F7/20 ,  H05G2/00

Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.

公开(公告)号：US10747119B2

公开(公告)日：2020-08-18

申请号：US16568044

申请日：2019-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih Huang ,  Chi Yang ,  Che-Chang Hsu ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03B27/54 ,  G03F7/20

Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

公开(公告)号：US10734325B2

公开(公告)日：2020-08-04

申请号：US16662970

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Long-Yi Chen ,  Jia-Hong Chu ,  Chi-Wen Lai ,  Chia-Ching Liang ,  Kai-Hsiung Chen ,  Yu-Ching Wang ,  Po-Chung Cheng ,  Hsin-Chin Lin ,  Meng-Wei Chen ,  Kuei-Shun Chen

IPC: H01L23/544 ,  H01L21/67 ,  H01L21/66 ,  H01L21/033 ,  G03F9/00 ,  G03F7/20 ,  H01L21/768

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.

公开(公告)号：US10663871B2

公开(公告)日：2020-05-26

申请号：US16359073

申请日：2019-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu Lee ,  Tao-Hsin Chen ,  Chia-Hao Hsu ,  Ching-Juinn Huang ,  Po-Chung Cheng

IPC: G03B27/62 ,  G03F7/20

Abstract: A reticle stage is provided, including an electrostatic chuck and an acoustic wave transducer. The electrostatic chuck includes multiple chucking electrodes embedded in a dielectric body and configured to secure a reticle to a chuck surface of the dielectric body by electrostatic attraction. The acoustic wave transducer is disposed on the chuck surface and configured to impart a surface acoustic wave to the chuck surface to vibrate the chuck surface, thereby removing the reticle from the reticle stage.

公开(公告)号：US10663633B2

公开(公告)日：2020-05-26

申请号：US15637910

申请日：2017-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Chih Hsieh ,  Kai Wu ,  Yen-Liang Chen ,  Kai-Hsiung Chen ,  Po-Chung Cheng ,  Chih-Ming Ke

IPC: G03F7/20 ,  G02B5/18 ,  G02F1/31 ,  G03H1/26 ,  G03F1/44

Abstract: A method for performing DBO measurements utilizing apertures having a single pole includes using a first aperture plate to measure X-axis diffraction of a composite grating. In some embodiments, the first aperture plate has a first pair of radiation-transmitting regions disposed along a first diametrical axis and on opposite sides of an optical axis that is aligned with a center of the first aperture plate. Thereafter, in some embodiments, a second aperture plate, which is complementary to the first aperture plate, is used to measure Y-axis diffraction of the composite grating. By way of example, the second aperture plate has a second pair of radiation-transmitting regions disposed along a second diametrical axis and on opposite sides of the optical axis. In some cases, the second diametrical axis is substantially perpendicular to the first diametrical axis.

公开(公告)号：US20200057393A1

公开(公告)日：2020-02-20

申请号：US16181111

申请日：2018-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi Yang ,  Sheng-Ta Lin ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: G03F7/20

Abstract: A method for cleaning a lithography apparatus is provided. The method includes flowing a major cleaning agent in volume over a reflective surface of a collector of the lithography apparatus; and flowing a minor cleaning agent in volume intermittently over the reflective surface of the collector, so as to clean the reflective surface of the collector.