Abstract:
Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.
Abstract:
A system, method and computer program product are provided for combining raw data from multiple metrology tools. Reference values are obtained for at least one parameter of a training component. Signals are collected for the at least one parameter of the training component, utilizing a first metrology tool and a different second metrology tool. Further, at least a portion the signals are transformed into a set of signals, and for each of the at least one parameter of the training component, a corresponding relationship between the set of signals and the reference values is determined and a corresponding training model is created therefrom. Signals from a target component are collected utilizing at least the first metrology tool and the second metrology tool, and each created training model is applied to the signals collected from the target component to measure parametric values for the target component.
Abstract:
Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.
Abstract:
Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. X-ray measurement data of a specimen is analyzed to determine at least one specimen parameter value that is treated as a constant in a combined analysis of both optical measurements and x-ray measurements of the specimen. For example, a particular structural property or a particular material property, such as an elemental composition of the specimen, is determined based on x-ray measurement data. The parameter(s) determined from the x-ray measurement data are treated as constants in a subsequent, combined analysis of both optical measurements and x-ray measurements of the specimen. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data.
Abstract:
Methods and systems for performing measurements based on a measurement model integrating a metrology-based target model with a process-based target model. Systems employing integrated measurement models may be used to measure structural and material characteristics of one or more targets and may also be used to measure process parameter values. A process-based target model may be integrated with a metrology-based target model in a number of different ways. In some examples, constraints on ranges of values of metrology model parameters are determined based on the process-based target model. In some other examples, the integrated measurement model includes the metrology-based target model constrained by the process-based target model. In some other examples, one or more metrology model parameters are expressed in terms of other metrology model parameters based on the process model. In some other examples, process parameters are substituted into the metrology model.
Abstract:
The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.