公开(公告)号：US08223408B2

公开(公告)日：2012-07-17

申请号：US12567827

申请日：2009-09-28

Applicant: Byoung Bag Lee ,  Nam Ik Cho ,  Sung Hoon Lee

Inventor： Byoung Bag Lee ,  Nam Ik Cho ,  Sung Hoon Lee

IPC: H04N1/04 ,  G06K9/00 ,  G06K9/36

CPC classification number: H04N1/3876 ,  H04N1/00567 ,  H04N1/00602 ,  H04N1/0405 ,  H04N1/1017 ,  H04N1/193

Abstract: An image forming apparatus is capable of scanning a document having a larger size than the flat. For example, it is possible to scan an A3 document using a scanning sensor having a slight larger size than an A4 document, and also it is possible to obtain a high quality of the A3 document image.

Abstract translation: 图像形成装置能够扫描具有比平面大的尺寸的文档。 例如，可以使用具有比A4文档稍大的尺寸的扫描传感器扫描A3文档，并且也可以获得A3文档图像的高质量。

公开(公告)号：US08217401B2

公开(公告)日：2012-07-10

申请号：US12716733

申请日：2010-03-03

Applicant: Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-Gu Jin

Inventor： Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-Gu Jin

IPC: H01L27/15 ,  H01L29/26

CPC classification number: H01L51/5203 ,  H01L33/382 ,  H01L33/62 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.

Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。

公开(公告)号：US20110037858A1

公开(公告)日：2011-02-17

申请号：US12850200

申请日：2010-08-04

Applicant: Sung Hoon LEE ,  Hyung-Guk Bae

Inventor： Sung Hoon LEE ,  Hyung-Guk Bae

IPC: H04N17/00

CPC classification number: H04N17/04 ,  G02F1/167 ,  G02F2203/69 ,  G09G3/006 ,  G09G3/344 ,  G09G2310/0245

Abstract: An inspecting method for an electrophoretic display device includes applying first signals into all pixel regions in a display region of the electrophoretic display device to inspect defects on an image; applying second signals into a first part of the pixel regions and maintaining the first signals at second and third parts of the pixel regions; and applying third signals into the first part of the pixel regions and fourth signals at the second part of the pixel regions and maintaining the first signals at to the third part of the pixel regions.

Abstract translation: 电泳显示装置的检查方法包括：将第一信号施加到电泳显示装置的显示区域中的所有像素区域中，以检查图像上的缺陷; 将第二信号施加到像素区域的第一部分中并将第一信号保持在像素区域的第二和第三部分; 以及将第三信号施加到像素区域的第一部分和第二部分像素区域处的第四信号，并将第一信号保持在像素区域的第三部分。

公开(公告)号：US07829937B2

公开(公告)日：2010-11-09

申请号：US11980351

申请日：2007-10-31

Applicant: Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

Inventor： Sung-Hoon Lee ,  Sungil Park ,  Young-Gu Jin ,  Jongseob Kim ,  Ki-Ha Hong

IPC: H01L29/76 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L29/792 ,  G11C16/10 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/42328 ,  H01L29/66833

Abstract: A semiconductor memory device performing an erase operation using an erase gate and a method of manufacturing the same are provided. The memory device may include a charge trap layer storing a first charge transfer medium having a first polarity and at least one erase gate. The at least one erase gate may be formed below the charge trap layer. A second charge transfer medium, which has a second polarity opposite to the first polarity, may be stored in the at least one erase gate. During the erase operation, the second charge transfer medium migrates to the charge trap layer causing the first charge transfer medium to combine with the second charge transfer medium.

Abstract translation: 提供了使用擦除栅极执行擦除操作的半导体存储器件及其制造方法。 存储器件可以包括存储具有第一极性的第一电荷转移介质和至少一个擦除栅极的电荷陷阱层。 至少一个擦除栅极可以形成在电荷陷阱层下面。 具有与第一极性相反的第二极性的第二电荷转移介质可以存储在至少一个擦除栅中。 在擦除操作期间，第二电荷转移介质迁移到电荷捕获层，使得第一电荷转移介质与第二电荷转移介质组合。

公开(公告)号：US20100155695A1

公开(公告)日：2010-06-24

申请号：US12716733

申请日：2010-03-03

Applicant: Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-gu Jin

Inventor： Noe-jung Park ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Young-gu Jin

IPC: H01L33/06

CPC classification number: H01L51/5203 ,  H01L33/382 ,  H01L33/62 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5096 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device that improves the injection efficiency of electrons or holes by providing electrons or holes to an emitting layer using nano size needles, including a first electrode with a first polarity a second electrode with a second polarity opposite to the first polarity an emitting layer interposed between the first electrode and the second electrode to emit light and a plurality of conductive needles inserted in the first electrode and extending toward the emitting layer.

Abstract translation: 一种发光装置，其通过使用纳米尺寸针向发光层提供电子或空穴来提高电子或空穴的注入效率，所述纳米尺寸针包括具有第一极性的第一电极，具有与第一极性相反的第二极性的第二电极， 介于所述第一电极和所述第二电极之间以发射光的层;以及插入所述第一电极中并朝向所述发光层延伸的多个导电针。

公开(公告)号：US07691741B2

公开(公告)日：2010-04-06

申请号：US11401585

申请日：2006-04-11

Applicant: Sung Hoon Lee

Inventor： Sung Hoon Lee

IPC: H01L21/4763

CPC classification number: H01L21/76802 ,  H01L21/31144 ,  H01L21/76831 ,  H01L27/10885

Abstract: A method of forming a bit line of a semiconductor device wherein an etch-stop nitride film, a trench oxide film and a hard mask nitride film are formed on a semiconductor substrate. The hard mask nitride film and the trench oxide film are etched to a limited etch thickness of a photo mask. The remaining trench oxide film is etched using the hard mask nitride film as a mask, thus forming a trench. The etch-stop nitride film and the hard mask nitride film are etched on condition that an oxide film has a high selectivity with respect to a nitride film. Accordingly, the loss of a top surface of the trench oxide film can be minimized and a bit line can be formed to have a uniform height. In accordance with the invention, bit line resistance and capacitance variation can be reduced and the reliability of a device can be improved.

Abstract translation: 一种形成半导体器件的位线的方法，其中在半导体衬底上形成蚀刻停止氮化物膜，沟槽氧化物膜和硬掩模氮化物膜。 将硬掩模氮化物膜和沟槽氧化物膜蚀刻到光掩模的有限蚀刻厚度。 使用硬掩模氮化物膜作为掩模蚀刻剩余的沟槽氧化膜，从而形成沟槽。 在氧化膜相对于氮化物膜具有高选择性的条件下蚀刻蚀刻停止氮化物膜和硬掩模氮化物膜。 因此，可以使沟槽氧化膜的上表面的损失最小化，并且可以形成具有均匀高度的位线。 根据本发明，可以降低位线电阻和电容变化，并且可以提高器件的可靠性。

公开(公告)号：US07659159B2

公开(公告)日：2010-02-09

申请号：US11753363

申请日：2007-05-24

Applicant: Sung Hoon Lee

Inventor： Sung Hoon Lee

IPC: H01L21/8238

CPC classification number: H01L27/115 ,  H01L29/66825 ,  H01L29/7881

Abstract: In a method of fabricating a flash memory device, a semiconductor substrate includes a tunnel insulating layer and a charge storage layer formed in an active region and a trench formed in an isolation region. A first insulating layer is formed to fill a part of the trench. A second insulating layer is formed on the first insulating layer so that the trench is filled. The first and second insulating layers are removed such that the first and second insulating layers remain on sidewalls of the charge storage layer and on a part of the trench. A third insulating layer is formed on the first and second insulating layers so that a space defined by the charge storage layer is filled. The third insulating layer is removed so that a height of the third insulating layer is lowered.

Abstract translation: 在制造闪速存储器件的方法中，半导体衬底包括隧道绝缘层和形成在有源区中的电荷存储层和形成在隔离区中的沟槽。 形成第一绝缘层以填充沟槽的一部分。 在第一绝缘层上形成第二绝缘层，以便填充沟槽。 去除第一和第二绝缘层，使得第一和第二绝缘层保留在电荷存储层的侧壁和沟槽的一部分上。 在第一和第二绝缘层上形成第三绝缘层，从而填充由电荷存储层限定的空间。 去除第三绝缘层，使得第三绝缘层的高度降低。

公开(公告)号：US20100011164A1

公开(公告)日：2010-01-14

申请号：US12353403

申请日：2009-01-14

Applicant: Jin-Hyeok CHOI ,  Sung-Hoon LEE ,  Si-Hoon HONG ,  Tae-Keun JEON

Inventor： Jin-Hyeok CHOI ,  Sung-Hoon LEE ,  Si-Hoon HONG ,  Tae-Keun JEON

IPC: G06F12/00

CPC classification number: G06F12/0646

Abstract: A memory system is provided includes a host processor, and a plurality of cascade connected memory cards connected to the host processor. Each of the memory cards stores a same default relative card address (RCA) prior to initialization of the memory system. The host processor is configured to sequentially access each memory card using the default RCA, and to change the default RCA to a unique RCA upon each sequential access.

Abstract translation: 提供了一种存储器系统，包括主处理器和连接到主处理器的多个级联连接的存储卡。 每个存储卡在存储器系统的初始化之前存储相同的默认相对卡地址（RCA）。 主处理器配置为使用默认RCA顺序访问每个存储卡，并且在每次顺序访问时将默认RCA更改为唯一的RCA。

公开(公告)号：US07566514B2

公开(公告)日：2009-07-28

申请号：US10685797

申请日：2003-10-16

Applicant: Sung-hoon Lee ,  Chan-ho Pak ,  Hyuk Chang ,  Jai-kwang Shin

Inventor： Sung-hoon Lee ,  Chan-ho Pak ,  Hyuk Chang ,  Jai-kwang Shin

IPC: H01M4/44

CPC classification number: H01M4/926 ,  H01M4/8605 ,  H01M4/921

Abstract: A catalyst particle having high oxygen reduction reactivity and low methanol oxidation reactivity, a supported catalyst comprising the catalyst particle, and a fuel cell using a cathode comprising the supported catalyst are provided. The whole catalyst particle or at least the surface of the catalyst particle includes an alloy of two or more metals selected from the group consisting of Fe, Co, Ni, Rh, Pd, Pt, Cu, Ag, Au, Zn, and Cd. The alloy has a stronger oxygen-binding force than platinum or a weaker hydrogen-binding force than platinum.

Abstract translation: 提供具有高氧还原反应性和低甲醇氧化反应性的催化剂颗粒，包含催化剂颗粒的负载催化剂和使用包含负载催化剂的阴极的燃料电池。 整个催化剂颗粒或至少催化剂颗粒的表面包括选自Fe，Co，Ni，Rh，Pd，Pt，Cu，Ag，Au，Zn和Cd中的两种或更多种金属的合金。 该合金具有比铂更强的氧结合力或比铂更弱的氢结合力。

公开(公告)号：US20090008664A1

公开(公告)日：2009-01-08

申请号：US12040686

申请日：2008-02-29

Applicant: Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

Inventor： Young-gu Jin ,  Sung-hoon Lee ,  Hyo-sug Lee ,  Byoung-lyong Choi ,  Jong-seob Kim

IPC: H01L33/00

CPC classification number: H01L33/08 ,  B82Y10/00 ,  H01L33/06 ,  H01L33/18 ,  Y10S977/762

Abstract: A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

Abstract translation: 提供了一种纳米线发光器件。 纳米线发光器件包括衬底，形成在衬底上的第一导电层，垂直形成在第一导电层上的多个纳米线，每个纳米线包括p掺杂部分和n掺杂部分， p掺杂部分和n掺杂部分，形成在纳米线上的第二导电层和其中嵌入发光材料的绝缘聚合物，填充纳米线之间的空间。 从发光层发出的光的颜色根据发光材料而变化。