公开(公告)号：US10483449B2

公开(公告)日：2019-11-19

申请号：US14209540

申请日：2014-03-13

Applicant: AVX Corporation

Inventor： Craig W. Nies ,  Andrew P. Ritter

IPC: H01L35/32 ,  H01L35/34 ,  H01L35/06 ,  H01L35/08 ,  H01L35/22

Abstract: Disclosed are apparatus and methodology for constructing thermoelectric devices (TEDs). N-type elements are paired with P-type elements in an array of pairs between substrates. The paired elements are electrically connected in series by various techniques including brazing for hot side and/or also cold side connections, and soldering for cold side connections while being thermally connected in parallel. In selected embodiments, electrical and mechanical connections of the elements may be made solely by mechanical pressure.

公开(公告)号：US20190319143A1

公开(公告)日：2019-10-17

申请号：US16454662

申请日：2019-06-27

Applicant: FUJITSU LIMITED

Inventor： Shigekazu Okumura ,  Shuichi Tomabechi

IPC: H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L35/18 ,  H01L31/18 ,  H01S5/343 ,  H01L35/34 ,  H01L35/30 ,  H01L33/00 ,  H01L33/12 ,  H01L33/06 ,  H01L33/30 ,  H01L33/16 ,  H01L31/0304 ,  H01S5/34 ,  H01S5/02 ,  H01L31/105

Abstract: A semiconductor crystal substrate includes: a crystal substrate whose principal surface is inclined relative to a (001) plane; and a superlattice structure layer including a first superlattice formation layer and a second superlattice formation layer, wherein the first superlattice formation layer is formed of Ga1-x1Inx1Asy1Sb1-y1 (0≤x1≤0.1, 0≤y1≤0.1), and a value of a standard deviation to a mean value of atomic step widths in an inclination direction is equal to or greater than 0 and equal to or smaller than 0.20, and the second superlattice formation layer is formed of Ga1-x2Inx2Asy2Sb1-y2 (0.9≤x2≤1, 0.9≤y2≤1), and a value of a standard deviation to a mean value of atomic step widths in an inclination direction is equal to or greater than 0 and equal to or smaller than 0.40.

公开(公告)号：US20190305175A1

公开(公告)日：2019-10-03

申请号：US15938425

申请日：2018-03-28

Applicant: Cambridge GaN Devices Limited

Inventor： Florin Udrea ,  Andrea De Luca ,  Giorgia Longobardi

IPC: H01L33/00 ,  H01L33/32 ,  H01L31/0304 ,  H01L35/30 ,  H01L27/15 ,  H01L31/109 ,  H01L31/112 ,  H01L27/144 ,  H01L35/34 ,  H01L31/18 ,  H01L27/16 ,  H01L35/22 ,  H05B3/28

Abstract: We disclose herewith a heterostructure-based infra-red (IR) device comprising a substrate comprising an etched portion and a substrate portion; a device region on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is formed at least partially within or on the membrane region and the heterostructure-based element comprises at least one two dimensional carrier gas.

公开(公告)号：US20190296209A1

公开(公告)日：2019-09-26

申请号：US16440963

申请日：2019-06-13

Applicant: Sridhar Kasichainula

Inventor： Sridhar Kasichainula

IPC: H01L35/34 ,  H02S30/20 ,  H02S10/10 ,  H01L35/30 ,  H01L31/054 ,  H01L35/08 ,  H01L35/32 ,  H02S40/44

Abstract: A thin-film based thermoelectric module includes a flexible substrate, a number of electrically conductive pads disposed on the flexible substrate, and a number of pairs of N-type and P-type thermoelectric legs electrically in contact with one another formed on corresponding electrically conductive pads of the number of electrically conductive pads such that an area of each N-type thermoelectric leg and another area of each P-type thermoelectric leg are each more than an area of the corresponding electrically conductive pad to allow for extension thereof outside the corresponding electrically conductive pad. The flexible substrate is aluminum (Al) foil, a sheet of paper, teflon, plastic, a single-sided copper (Cu) clad laminate sheet, or a double-sided Cu clad laminate sheet, and has a dimensional thickness less than or equal to 25 μm. The thin-film based thermoelectric module is less than or equal to 100 μm in dimensional thickness.

公开(公告)号：US10424708B2

公开(公告)日：2019-09-24

申请号：US14878481

申请日：2015-10-08

Applicant: FUJITSU LIMITED

Inventor： John David Baniecki ,  Masatoshi Ishii ,  Kazuaki Kurihara

IPC: H01L35/12 ,  H01L35/22 ,  H01L35/32 ,  H01L35/26 ,  H01L35/34

Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

公开(公告)号：US20190288172A1

公开(公告)日：2019-09-19

申请号：US16312842

申请日：2017-10-17

Applicant: LG CHEM, LTD.

Inventor： Yu Ho MIN ,  Cheol-Hee PARK

IPC: H01L35/16 ,  C01B19/00 ,  H01L35/34

Abstract: A chalcogen-containing compound that exhibits low thermal conductivity and excellent thermoelectric properties, and exhibits excellent phase stability even at relatively low temperature, a method for preparing the same, and a thermoelectric element including the same.

公开(公告)号：US10396263B2

公开(公告)日：2019-08-27

申请号：US15537339

申请日：2015-12-16

Applicant: LG CHEM, LTD.

Inventor： Jae-Ki Lee ,  Tae-Hoon Kim ,  Cheol-Hee Park ,  Kyung-Moon Ko ,  Chee-Sung Park ,  Myung-Jin Jung

IPC: H01L35/18 ,  H01L35/28 ,  H01L35/32 ,  H01L35/34

Abstract: Disclosed is surface-treated thermoelectric powder which may be used for manufacturing a Skutterudite-based thermoelectric material with improved thermoelectric performance. The thermoelectric powder may include a core portion having one or more Skutterudite particles, and a coating portion having a Ni-containing material and coated on at least a part of a surface of the core portion.

公开(公告)号：US10388845B2

公开(公告)日：2019-08-20

申请号：US15769092

申请日：2016-10-20

Applicant: CONSORZIO DELTA TI RESEARCH

Inventor： Danilo Mascolo ,  Antonietta Buosciolo ,  Giuseppe Latessa ,  Giuseppe Gammariello ,  Marco Giusti ,  Italo Gison

IPC: H01L35/32 ,  H01L27/16 ,  H01L35/22 ,  H01L35/30 ,  H01R13/73 ,  H01L35/34

Abstract: A thermoelectric generator of compact size, having a simple structure configured for increasing the conversion efficiency of thermal energy into electric energy, so as it is possible to transform into electric current also as amount of heat per unit surface greater than thin film prior art devices, has a base silicon wafer and a cover silicon wafer, wherein the cover silicon wafer is facing said base silicon wafer in such a way that the respective top contacts are in contact and the space between the cover silicon wafer and the base silicon wafer is a space in which vacuum is made or a gas is present, in particular air.

公开(公告)号：US10388695B2

公开(公告)日：2019-08-20

申请号：US13659622

申请日：2012-10-24

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: H01L27/16 ,  H01L35/02 ,  H01L23/38 ,  H01L35/34

Abstract: Method of wireless communication between a first device and a second device, in which, the first device and the second device comprising respectively a first thermoelectric generator and a second thermoelectric generator, the two thermoelectric generators being in thermal coupling, a first signal is generated within the first device, the first thermoelectric generator is electrically powered as a function of the first signal so as to create a first thermal gradient in the said first generator and a second thermal gradient in the second generator, and a second signal is generated within the second device on the basis of the electrical energy produced by the second thermoelectric generator in response to the said second thermal gradient.

公开(公告)号：US20190252595A1

公开(公告)日：2019-08-15

申请号：US16336909

申请日：2017-09-28

Applicant: Tzila IMRY ,  YEDA RESEARCH AND DEVELOPMENT CO.LTD

Inventor： Yoseph IMRY ,  Dan SHAHAR

IPC: H01L35/34 ,  G01R31/26

CPC classification number: H01L35/34 ,  G01R31/26 ,  G01R31/2632

Abstract: Thermoelectric devices based on diodes. Devices and systems can be used as cooling devices or cooling systems or as energy harvesting devices or energy harvesting systems. System comprising: a diode (3.1) comprising a first end and a second end; at least one thermometer (3.2) attached to said first end of said diode; and a power supply/current generator (3.6). Method of changing the temperature of an element, said method comprising: providing a system comprising: a diode comprising a first end and a second end; a thermometer attached to at least said first end or said second end of said diode; and a power supply/current generator; contacting said first end or said second end of said diode to said element; driving current through or applying voltage to said diode, thereby cooling the first end of said diode and heating the second end of said diode, thereby transferring heat between said diode and said element, thus changing the temperature of said element.