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公开(公告)号：US10456774B2
公开(公告)日：2019-10-29
申请号：US15630727
申请日：2017-06-22
发明人： Nurxat Nuraje , Angela M. Belcher , Yu Lei
IPC分类号： B01J23/60 , H01L31/032 , C30B7/14 , B01J23/843 , B01J27/24 , B01J35/00 , B82Y30/00 , C30B7/00 , C30B29/24 , C30B29/30 , C30B29/32 , C30B31/06 , C01B3/04 , B01J23/00 , B01J23/02 , B01J23/20
摘要： A biotemplated nanomaterial can include a crystalline perovskite.
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92.发明申请公开(公告)号：US20190305169A1
公开(公告)日：2019-10-03
申请号：US16438205
申请日：2019-06-11
IPC分类号： H01L31/0725 , H01L31/18 , H01L31/0352 , H01L31/032
摘要： Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.
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公开(公告)号：US10431709B2
公开(公告)日：2019-10-01
申请号：US16144636
申请日：2018-09-27
IPC分类号： H01L31/18 , H01L21/02 , H01L31/032 , H01L31/0749 , H01L31/0445 , H01L31/0224 , H01L31/0352 , H01L31/0392
摘要： A method (200) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least one alkali metal (235), and forming at least one cavity (236, 610, 612, 613) at the surface of the absorber layer wherein forming of said at least one cavity is by dissolving away from said surface of the absorber layer at least one crystal aggregate comprising at least one alkali crystal comprising at least one alkali metal. The method (200) is advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
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公开(公告)号：US20190292375A1
公开(公告)日：2019-09-26
申请号：US16436538
申请日：2019-06-10
IPC分类号： C09D1/00 , H01G9/20 , H01L51/42 , C09D7/63 , H01L31/032 , C09D11/02 , H01L51/00 , H01L51/44 , H01G9/00 , C09D7/20 , C09D11/36
摘要： Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
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公开(公告)号：US10424682B2
公开(公告)日：2019-09-24
申请号：US15032168
申请日：2013-11-04
发明人： John A. Naumovitz , Hongyu Chen , Yan Huang , Ada Yu Zhang , Zhi Xu
IPC分类号： H01L31/055 , B32B27/08 , C09K11/06 , H01L31/048 , C09K11/02 , B32B27/18 , B32B27/32 , B32B27/20 , B32B27/30 , H01L31/0296 , H01L31/032
摘要： A multilayer encapsulant film having at least two layers includes a first layer comprising an encapsulant resin, and a second layer comprising an encapsulant resin and at least one down-converter, such as a rare-earth organometallic complex. The down-converter may be present in an amount of at least 0.0001 wt % based on the total weight of the encapsulant film. Further layers of a multilayer encapsulant film may or may not include a down-converter. Preferably, a multilayer encapsulant film contains at least one layer with at least one down-converter and at least one layer without a down-converter. Such multilayer down-converting films may be used in an electronic device, such as a PV module.
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公开(公告)号：US10418498B2
公开(公告)日：2019-09-17
申请号：US16396898
申请日：2019-04-29
申请人： LG CHEM, LTD.
发明人： Eun Ju Park , Seokhee Yoon , Seokhyun Yoon , Hosub Lee
IPC分类号： H01L21/00 , H01L31/032 , C01G19/00 , C01G9/08 , C09D11/52 , H01L31/0224 , H01L31/18
摘要： Disclosed are a single-source precursor for synthesizing metal chalcogenide nanoparticles for producing a light absorption layer of solar cells comprising a Group VI element linked as a ligand to any one metal selected from the group consisting of copper (Cu), zinc (Zn) and tin (Sn), metal chalcogenide nanoparticles produced by heat-treating at least one type of the single-source precursor, a method of preparing the same, a thin film produced using the same and a method of producing the thin film.
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公开(公告)号：US10373950B2
公开(公告)日：2019-08-06
申请号：US15799921
申请日：2017-10-31
申请人： SCHOTTKY LSI, INC.
IPC分类号： H01L29/872 , H01L27/06 , H01L27/02 , H01L27/07 , H01L27/105 , H01L27/108 , H01L27/112 , H01L27/11526 , H01L27/11546 , H01L27/118 , H01L31/032 , H01L31/0376 , H01L31/072 , H01L31/074 , H03K19/177 , H01L25/065 , H01L21/8238 , H01L29/66 , H01L31/07 , H01L49/02
摘要： A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.
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公开(公告)号：US10355212B2
公开(公告)日：2019-07-16
申请号：US15249826
申请日：2016-08-29
IPC分类号： H01L31/00 , H01L51/00 , C08K3/04 , C08G61/12 , C08L65/00 , H01L51/42 , H01L31/032 , H01L31/0256 , C08L75/04
摘要： In one embodiment, a polymer includes a recurring unit containing a bivalent group expressed by a formula (1) shown below. A weight-average molecular weight of the polymer is in a range of 3000 or more to 1000000 or less. R1 is a monovalent group selected from hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkanoyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heteroaryl group. X is an atom selected from oxygen, sulfur, and selenium. Y and Z are each independently a bivalent group selected from a carbonyl group, a sulfinyl group, and a sulfonyl group. A case where Y and Z are both the carbonyl groups is excluded.
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公开(公告)号：US20190198687A1
公开(公告)日：2019-06-27
申请号：US16112999
申请日：2018-08-27
发明人： Xinlian LI
IPC分类号： H01L31/0236 , H01L31/0445 , H01L31/054 , H01L31/18 , H01L31/032
CPC分类号： H01L31/02366 , H01L31/0322 , H01L31/0445 , H01L31/054 , H01L31/18
摘要： The present disclosure relates to a thin film solar cell and a method for making the same. The thin film solar cell comprises a substrate and a back electrode layer, a light absorbing layer, a buffer layer, a window layer and an upper electrode disposed on the substrate; and a surface of the light absorbing layer comprises a light trapping structure.
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公开(公告)号：US10316196B2
公开(公告)日：2019-06-11
申请号：US15713104
申请日：2017-09-22
IPC分类号： H01L51/42 , C09D1/00 , H01G9/20 , H01L51/00 , C09D7/63 , C09D7/20 , H01L31/032 , C09D11/02 , C09D11/36 , H01G9/00 , H01L51/44 , H01L31/0256
摘要： Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
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