Preparation method of anode active material for pseudocapacitor

    公开(公告)号:US11087932B2

    公开(公告)日:2021-08-10

    申请号:US16646478

    申请日:2018-09-14

    申请人: LG CHEM, LTD.

    摘要: The present disclosure provides a method of preparing an anode active material having high specific capacitance in a simple and inexpensive process without applying high temperature and high pressure conditions by synthesizing urchin-shaped goethite iron oxide (alpha-FeOOH) using an aqueous solution containing thiosulfate ions and sulfate ions, followed by heat treatment to synthesize hematite iron oxide (alpha-Fe2O3) having a nano-sized urchin-like structure, in order to provide an anode for a pseudocapacitor that is excellent in specific capacitance.

    Aqueous electrolyte and pseudocapacitor comprising same

    公开(公告)号:US11177079B2

    公开(公告)日:2021-11-16

    申请号:US16764811

    申请日:2019-08-12

    申请人: LG Chem, Ltd.

    IPC分类号: H01G11/60 H01G11/62 H01G11/64

    摘要: An aqueous electrolyte for a pseudo-capacitor and a pseudo-capacitor comprising the same, and more particularly an aqueous electrolyte for a pseudo-capacitor comprising an aqueous solvent, and a certain concentration or more of a lithium salt and a zwitterionic compounds, and a pseudo-capacitor comprising the aqueous electrolyte described above.

    PREPARATION METHOD OF HEXAGONAL MOLYBDENUM OXIDE NANOROD

    公开(公告)号:US20200283306A1

    公开(公告)日:2020-09-10

    申请号:US16753382

    申请日:2018-11-23

    申请人: LG CHEM, LTD.

    IPC分类号: C01G39/02 H01G11/46

    摘要: The preparation method according to the present disclosure is to easily prepare hexagonal molybdenum oxide (h-MoO3) having a nanorod shape even in a low temperature precipitation reaction at atmospheric pressure without applying hydrothermal synthesis under high temperature and high pressure conditions. The hexagonal molybdenum oxide (h-MoO3) nanorods prepared therefrom can be properly mixed with carbon-based conductive materials such as carbon nanofiber, and thus can be usefully used as an anode material for a pseudocapacitor.