摘要:
To implement a solid-state image pickup element in which the peripheral circuit is downsized, there is provided a solid-state image pickup element including a plurality of pixel blocks each having a plurality of photoelectric conversion elements, a plurality of transfer switches each having one terminal connected to a corresponding photoelectric conversion element, a signal input portion commonly connected to the other terminal of each of the plurality of transfer switches, and an amplifier connected to the signal input portion, and a scanning circuit for outputting a scanning clock for each pixel block.
摘要:
The solid state image pick-up device comprises a chip wherein an object to be photographed is put directly on the back surface of the chip, a light incident on the object enters the inner portion of the chip, signal electric charges generated in the inner portion of the chip by the light, the signal electric charges are collected in a photo detective region and the photo detective region has a barrier diffusion layer adjacent thereto so as to collect the signal electric charges effectively. The above-mentioned structure of the solid state image pick-up device can provide superior features that the chip of the solid state image pick-up device is protected from the deterioration of elements included in the chip and the destruction of the elements by Electro Static Discharge, resulting in the reliability improvement of the chip.
摘要:
OFF current of a TFT is reduced. There is provided a semiconductor device comprising: a substrate; a shielding film formed so as to be in contact with the substrate; a planarization insulating film formed on the substrate so as to cover the shielding film; and a semiconductor layer formed so as to be in contact with the planarization insulating film. The semiconductor device is characterized in that the shielding film overlaps the semiconductor layer with the planarization insulating film sandwiched therebetween, and that the planarization insulating film is polished by CMP before the semiconductor layer is formed.
摘要:
An image sensor architecture that accommodates the relative mismatch of bus width between the image sensor, processor, and memory is disclosed. The preferred embodiment of the invention provides a dual-ported memory structure having a relatively wide data port for receiving data from the image sensor and having a relatively narrow data port for communicating data to and from the processor. In one embodiment of the invention, the memory is organized into banks of a specific width. The banks may be accessed sequentially by the processor, such that the bus width is equivalent to the bank width, and the banks may be accessed simultaneously, such that the bus width is equivalent to the combined bank widths. A simple switching means, operating under processor control, reconfigures the memory on the fly.
摘要:
A solid-state imaging device comprising an imaging area having unit cells, a vertical driving circuit, signal processing circuits, a horizontal driving circuit, and an output circuit. Each of the unit cells including first and second photoelectric conversion/storage sections, first and second charge readout circuits, a potential detecting circuit, a reset circuit, and an address circuit. The solid-state imaging device has a first operation mode in which the first and second charge readout circuits are driven at substantially the same timing by the vertical driving circuit, the charges stored in the first and second photoelectric conversion/storage sections are transferred to and added together in the charge detecting section, and the potential detecting circuit detects the added charges, generates and transmits a potential corresponding to an amount of detected charges to the vertical signal line, and outputs the potential from the output circuit via the signal processing circuits.
摘要:
A CCD imaging system is provided, including a short focal length lens for accepting light from the scene to be imaged and a charge storage medium having a charge storage substrate that is curved in a selected nonplanar focal surface profile and located a selected distance from the lens with the focal surface facing the lens, the focal surface profile and lens-to-substrate distance selected such that the light accepted by the lens is in focus at the position of the substrate. There is provided a support substrate on which the nonplanar charge storage substrate is supported to maintain the selected surface profile of the charge storage substrate. An array of pixels defined in the charge storage substrate by pixel interconnections is supported on the front side of the substrate, such that exposure of the substrate to light from the scene through the lens produces charge packets in the pixels, with the pixel interconnections providing selective electronic temporal control of transfer of charge packets from one pixel to another in the substrate. Also provided is means for suppressing generation of dark current charge packet generation in the substrate pixels. Anan output circuit converts the charge packets in the pixels to an electrical pixel signal of output pixel values based on the light from the scene. A plurality of pixel values together form an image frame, the output pixel values being produced at a rate corresponding to the image frame rate, R.
摘要:
In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.
摘要:
An image sensor, a reading device and a method for setting a resolution are provided for setting the resolution to multiple levels without increasing signal types. The image sensor comprises plural photoelectric converting elements for converting optical signals to electric signals; a group of channel select switches, each channel select switch arranged between a charge output unit of each channel select switch and a signal line corresponding to each photoelectric converting element, wherein the group of the channel select switches can be turned on and off sequentially synchronizing with an externally supplied clock pulse signal; and resolution setting means, wherein when a resolution assignment signal, a resolution assignment timing signal and a resolution assignment period setting signal are input, the resolution setting means sets an on-off control pattern for the group of the channel select switches according to an on-off pattern of the resolution assignment signal at a plurality of timings set by the resolution assignment timing signal in a resolution assignment period set according the resolution assignment setting signal.
摘要:
An image pickup apparatus has an image pickup section which photographs an image and outputs its image information, a determining section which determines whether or not the image information should undergo a pixel addition processing according to a result of beam measurement, a pixel adding section which, when it is determined that the pixel addition processing should be executed, executes the pixel addition processing upon the image information, and a transmitting section for transmitting the image information which pixels are added to an external unit, wherein, when exposure becomes short, the pixel addition processing is automatically executed even unless user gives any instruction about the pixel addition processing under his determination for each time.
摘要:
Embodiments of the present invention provide systems and methods for converting an achromatic, higher-resolution image to a lower-resolution image with reduced visible errors. These systems and methods comprise a sub-pixel sampling performed on a higher-resolution image. The sub-pixel sampled image is then converted to an opponent color domain image that is separated into separate luminance and chrominance channels. These chrominance channels are then high-pass filtered and combined with the luminance channel to form a filtered opponent color domain image.